Untitled
Abstract: No abstract text available
Text: Preliminary FFPF20UP30S Ultrafast Recovery Power Rectifier FFPF20UP30S Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF=20A • High Reverse Voltage : VRRM = 300V • Avalanche Energy Rated • Planar Construction
|
Original
|
PDF
|
FFPF20UP30S
FFPF20UP30S
O-220F
|
Untitled
Abstract: No abstract text available
Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP3060
RHRP3060
|
TA49063
Abstract: RHRP3060
Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP3060
RHRP3060
TA49063
|
RURP8100CC
Abstract: No abstract text available
Text: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted
|
Original
|
PDF
|
RURP8100CC
RURP8100CC
|
RHR8100C
Abstract: RHRP8100CC
Text: RHRP8100CC Data Sheet Title HR 100 bt A, 00V pert al ode) utho rpoon, minctor, ache erg ted, itch wer pes, wer File Number 3965.2 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns). It has half the recovery
|
Original
|
PDF
|
RHRP8100CC
RHRP8100CC
RHR8100C
|
RHR8100C
Abstract: RHRP8100CC
Text: RHRP8100CC Data Sheet January 2002 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP8100CC
RHRP8100CC
175oC
RHR8100C
|
RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
|
Original
|
PDF
|
RURU150120
RURU150120
200ns)
200ns
|
UR4120
Abstract: TA49036 RURD4120 RURD4120S RURD4120S9A
Text: RURD4120, RURD4120S Data Sheet Title UR 120, RD 20S bt A, 00V rafa odes utho eyrds A, 00V rafa wer pes, wer File Number 3641.3 4A, 1200V Ultrafast Diodes Features The RURD4120 and RURD4120S are ultrafast diodes with soft recovery characteristics trr < 70ns). They have low
|
Original
|
PDF
|
RURD4120,
RURD4120S
RURD4120
RURD4120S
UR4120
TA49036
RURD4120S9A
|
RUR660
Abstract: RURD660S RURD660 RURD660S9A TO-251 fairchild
Text: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted
|
Original
|
PDF
|
RURD660,
RURD660S
RURD660
RURD660S
175oC
RUR660
RURD660S9A
TO-251 fairchild
|
HR6120
Abstract: RHRD6120 RHRD6120S RHRD6120S9A TA49058
Text: RHRD6120, RHRD6120S Data Sheet Title HR 120, HRD 20S bt A, 00V pert odes utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch - January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with
|
Original
|
PDF
|
RHRD6120,
RHRD6120S
RHRD6120
RHRD6120S
HR6120
RHRD6120S9A
TA49058
|
RHRP8120
Abstract: rhrp8120 diode TA49096
Text: RHRP8120 Data Sheet January 2002 8A, 1200V Hyperfast Diode Features The RHRP8120 is a hyperfast diodes with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP8120
RHRP8120
175oC
rhrp8120 diode
TA49096
|
MUR1620CT
Abstract: RURP820CC
Text: MUR1620CT, RURP820CC Data Sheet January 2000 File Number 1885.5 8A, 200V Ultrafast Dual Diodes Features The MUR1620CT and RURP820CC are ultrafast dual diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride
|
Original
|
PDF
|
MUR1620CT,
RURP820CC
MUR1620CT
RURP820CC
|
RHR8120C
Abstract: RHRP8120CC TA49096
Text: RHRP8120CC Data Sheet January 2002 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP8120CC
RHRP8120CC
175oC
RHR8120C
TA49096
|
Untitled
Abstract: No abstract text available
Text: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted
|
Original
|
PDF
|
RURD660,
RURD660S
RURD660
RURD660S
|
|
|
RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RURU150120
RURU150120
200ns)
200ns
175oC
|
Untitled
Abstract: No abstract text available
Text: RHRP840, RHRP860 Data Sheet January 2002 8A, 400V - 600V Hyperfast Diodes Features The RHRP840 and RHRP860 are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP840,
RHRP860
RHRP840
RHRP860
|
RHRG7560
Abstract: No abstract text available
Text: RHRG7560 Data Sheet January 2000 File Number 3944.2 75A, 600V Hyperfast Diode Features The RHRG7560 is a hyperfast diode with soft recovery • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns Title characteristics trr < 55ns . It has half the recovery time of
|
Original
|
PDF
|
RHRG7560
RHRG7560
|
RHR8120C
Abstract: RHRP8120CC TA49096
Text: RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode Features Title HRP 20C The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
|
Original
|
PDF
|
RHRP8120CC
RHRP8120CC
RHR8120C
TA49096
|
RHRP840CC
Abstract: RHRP860C RHRP860CC hrp 100
Text: RHRP840CC, RHRP860CC Data Sheet Title HRP 0CC HRP 0CC bt A, 0V 0V pert al odes January 2000 File Number 3964.2 8A, 400V - 600V Hyperfast Dual Diodes Features The RHRP840CC and RHRP860CC are hyperfast dual diodes with soft recovery characteristics trr < 30ns . They
|
Original
|
PDF
|
RHRP840CC,
RHRP860CC
RHRP840CC
RHRP860CC
RHRP860C
hrp 100
|
RUR660
Abstract: RURD660S RURD660 RURD660S9A
Text: RURD660, RURD660S Data Sheet Title UR 60, RD 0S bt A, 0V rafa odes utho eyrds A, 0V rafa January 2000 wer pes, wer itch 3750.2 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns). They have low forward
|
Original
|
PDF
|
RURD660,
RURD660S
RURD660
RURD660S
RUR660
RURD660S9A
|
Untitled
Abstract: No abstract text available
Text: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride
|
Original
|
PDF
|
RHRG3040,
RHRG3060
RHRG3040
RHRG3060
175oC
|
Untitled
Abstract: No abstract text available
Text: Preliminary SMBL1G200US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-BA • Boost(Step Up) Converter
|
OCR Scan
|
PDF
|
SMBL1G200US60
40ins
|
Untitled
Abstract: No abstract text available
Text: Preliminary SMBH1G200US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-BA • Buck(Step Down) Converter
|
OCR Scan
|
PDF
|
SMBH1G200US60
|
Untitled
Abstract: No abstract text available
Text: Preliminary SM2G200US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • Package code : 7-PM-BA
|
OCR Scan
|
PDF
|
SM2G200US60
|
