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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FMD 15-06KC5 FDM 15-06KC5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode	Original	PDF	15-06KC5 20090209c
IXKH35N60C5 Abstract: No abstract text available Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	35N60C5 O-247 20090209c IXKH35N60C5
13n60c Abstract: 13n60 Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	PDF	13N60C5 O-220 20090209c 13n60c 13n60
Untitled Abstract: No abstract text available Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	35N60C5 O-247 20090209c
Untitled Abstract: No abstract text available Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	10N60C5 O-220 20090209c
10N60C Abstract: No abstract text available Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	PDF	10N60C5 O-220 20090209c 10N60C
E72873 Abstract: No abstract text available Text: FMD 15-06KC5 FDM 15-06KC5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode	Original	PDF	15-06KC5 15IISOL 20090209c E72873