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Catalog Datasheet	MFG & Type	PDF	Document Tags
C4080 Abstract: No abstract text available Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET	Original	PDF	24N60C5M O-220 20070704a C4080
IXYS SCR Gate Drive Abstract: IXYS CS 30 Text: CS 22 VRRM = 800-1200 V IT AV M = 16 A Phase Control Thyristors Electrically Isolated Tab VRSM VDSM VRRM VDRM V V 800 1200 800 1200 TO-220 Isolated Type A C C A G G CS 22-08io1M CS 22-12io1M A = Anode, C = Cathode, G = Gate Tab = Isolated Symbol Conditions	Original	PDF	O-220 22-08io1M 22-12io1M 20070704a IXYS SCR Gate Drive IXYS CS 30
Untitled Abstract: No abstract text available Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol	Original	PDF	20N60C5M O-220 20070704a
10N60C Abstract: GS54 Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET	Original	PDF	10N60C5M O-220 20070704a9 10N60C GS54
33-05N Abstract: VUM 33-05n Text: VUM 33-05N ID25 = 47 A VDSS = 500 V RDS on = 0.12 Ω Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 1 4 6 3 4 2 VUM 33-05N 5 7 8 Conditions VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ	Original	PDF	33-05N 20070704a 33-05N VUM 33-05n
Untitled Abstract: No abstract text available Text: DSSK 20-0045AM IFAV = 2x10 A VRRM = 45 V VF = 0.56 V Power Schottky Rectifier with common cathode Preliminary data VRSM VRRM V V 45 45 A Type C A TO-220 Isolated A C A DSSK 20-0045AM Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 145°C; rectangular, d = 0.5	Original	PDF	20-0045AM O-220 20070704a
Untitled Abstract: No abstract text available Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol	Original	PDF	13N60C5M O-220 20070704a
Untitled Abstract: No abstract text available Text: VUM 33-05N ID25 = 47 A VDSS = 500 V RDS on = 0.12 Ω Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 1 4 6 3 4 2 VUM 33-05N 5 7 8 Features Conditions VDSS VDGR VGS TVJ = 25°C to 150°C	Original	PDF	33-05N 20070704a