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    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM Search Results

    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

    Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
    Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    PDF SPM6G070-060D 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D

    SPM6G070-060D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    PDF SPM6G070-060D SPM6G070-060D

    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

    Abstract: SPM6G070-060D 210C DS34C87 SFH6186-4
    Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


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    PDF SPM6G070-060D 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM SPM6G070-060D 210C DS34C87 SFH6186-4

    SMCS6G060-120-1

    Abstract: SMCS6G070-060-1 Analog tachometer driver 210C 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM sensorless bdc motor speed control driving IC 5041
    Text: SENSITRON SEMICONDUCTOR SMCS6G070-060-1 SMCS6G060-120-1 TECHNICAL DATA DATASHEET 5041, Preliminary Sensorless Brushless DC Motor Driver Module in a Power Flatpack 600V/70A, 1200V/60A DESCRIPTION: The SMCS6GXXX-XXX-1 is an, integrated three-phase brushless DC motor controller/driver subsystems


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    PDF SMCS6G070-060-1 SMCS6G060-120-1 00V/70A, 200V/60A SMCS6G060-120-1 SMCS6G070-060-1 Analog tachometer driver 210C 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM sensorless bdc motor speed control driving IC 5041