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    2 SA 673 SEMICONDUCTOR Search Results

    2 SA 673 SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2 SA 673 SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    572B-T160L

    Abstract: B2329 ABB B45 BB342
    Text: MLX75411, MLX75412 Avocet HDR Image Sensors Datasheet Application Examples Features and Benefits 1 1 1 1 1 1 1 1 1 1 1 Automotive Driver Assistance Systems ADAS 1 Lane departure warning (LDW) 1 Forward collision warning (FCW) 1 Automatic high-beam assist


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    PDF MLX75411, MLX75412 154dB 1024x512 ISO14001 Jun/11 572B-T160L B2329 ABB B45 BB342

    ic08k

    Abstract: LTC1417 serial and parallel Analog to digital converter LTC1096 LTC1096L LTC1098 LTC1098L LTC1099 LTC1196 LTC1198
    Text: Data Conversion InfoCard 8 Analog-to-Digital Converters Analog-to-Digital Converters Parallel Serial Single 8-Bit LTC1096 5V, Micropower, SO-8 LTC1096L 3V, Micropower, SO-8 LTC1196 3V to 5V, 1Msps, SO-8 10-Bit LTC1092 5V, 38ksps LTC1197 5V, 500ksps, SO-8 LTC1197L 3V, 250ksps, MSOP


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    PDF LTC1096 LTC1096L LTC1196 10-Bit LTC1092 38ksps LTC1197 500ksps, LTC1197L 250ksps, ic08k LTC1417 serial and parallel Analog to digital converter LTC1098 LTC1098L LTC1099 LTC1198

    sla 4051

    Abstract: Philips PCF8833 mv silicon c320 sla 4052 140668 601330 C3657 intel 8951 MX C339 Philips ID33
    Text: INTEGRATED CIRCUITS DATA SHEET PCF8833 STN RGB - 132 x 132 × 3 driver Objective specification 2003 Feb 14 Philips Semiconductors Objective specification STN RGB - 132 × 132 × 3 driver PCF8833 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION


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    PDF PCF8833 SCA75 403512/01/pp112 sla 4051 Philips PCF8833 mv silicon c320 sla 4052 140668 601330 C3657 intel 8951 MX C339 Philips ID33

    HCTS393DMSR

    Abstract: HCTS393HMSR HCTS393KMSR HCTS393MS
    Text: HCTS393MS Radiation Hardened Dual 4-Stage Binary Counter August 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


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    PDF HCTS393MS MIL-STD-1835 CDIP2-T14 05A/cm2 HCTS393 TA14490A. HCTS393DMSR HCTS393HMSR HCTS393KMSR HCTS393MS

    HCTS393D

    Abstract: HCTS393HMSR HCTS393KMSR HCTS393MS HCTS393DMSR
    Text: HCTS393MS Radiation Hardened Dual 4-Stage Binary Counter August 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


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    PDF HCTS393MS MIL-STD-1835 CDIP2-T14 05A/cm2 HCTS393 TA14490A. HCTS393D HCTS393HMSR HCTS393KMSR HCTS393MS HCTS393DMSR

    PMBFJ111

    Abstract: PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472
    Text: b b S B ' m 0024052 TÔT * A P X Philips Semiconductors PMBFJ111/PMBFJ112/ PMBFJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE PINNING - SOT23 PIN CONFIGURATION FEATURES b?E 1> DESCRIPTION


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    PDF PMBFJ111/PMBFJ112/ PMBFJ113 PMBFJ111) MBB114 PMBFJ112) PMBFJ113) DD54DSS PMBFJ111/PMBFJ112/PMBFJ113 PMBFJ111 PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472

    SG3524AN

    Abstract: an170 philips TCA280 NE 555 timer TDA1543A MC 1310 stereo decoder fsk generator using timer 555 LM 272 dual op amp NE5080 application tda1541
    Text: Philips Semiconductors Functional Index General-Purpose/Linear ICs Preface. Section 1 General Information .


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    Untitled

    Abstract: No abstract text available
    Text: BR2505 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD. BR2510 T E C H N IC A L S P E C IF IC A T IO N S O F S IN G L E -P H A S E S IL IC O N B R ID G E R E C T IF IE R VOLTAGE RANGE - 5 0 to 1000 Volts CURRENT - 25 Amperes FEATURES


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    PDF BR2505 BR2510 ratings-400 IL-STD-202E, BR2505

    TSM 1416

    Abstract: TRANSISTOR C 3068 C2580 BFG16A ts 4141 TRANSISTOR TRANSISTOR D 1691
    Text: b t .S a ' ìa i Philips Semiconductors 0024774 _ T i b • APX Product specification NPN 2 GHz wideband transistor BFG16A N APIER P H I L I P S / D I S C R E T E FEATURES b?E D PINNING • High power gain PIN DESCRIPTION • Good thermal stability


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    PDF G024774 BFG16A OT223 OT223. TSM 1416 TRANSISTOR C 3068 C2580 BFG16A ts 4141 TRANSISTOR TRANSISTOR D 1691

    4910E

    Abstract: MGF4914E MGF4918E
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series SUPER LOW NOISE InGaAs H E M T j DESCRIPTION The M G F4910E OUTLINE DRAWING series su per-lo w -n oise HEMT U n it m illim e te rs inches (High Electron M o bility Transistor) is designed fo r use in X to


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    PDF F4910E 4910E MGF4914E MGF4918E

    PMBFJ111

    Abstract: No abstract text available
    Text: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23


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    PDF 0024DS2 J111/P J112/ FJ113 PMBFJ111) PMBFJ112) PMBFJ113) DD24D55 PMBFJ111/PMBFJ112/PMBFJ113 PMBFJ111

    CY7C167

    Abstract: CY7C167-25DC i781 7C167
    Text: CYPRESS SE MI CONDUCT OR 250^2 MfciE D oodbM^ i acYP CY7CX67 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected CMOS for optimum speed/power High speed • — 25 ns Low active power — 275 mW Low standby power — 83 m ff


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    PDF CY7C167 CY7C167 CY7C167-45DC CY7C167-45LC CY7C167-45VC CY7C167-45DMB CY7C167-45LMB T-46-23-05 CY7C167-25DC i781 7C167

    1999Volts

    Abstract: No abstract text available
    Text: * PHILIPS E C G INC ECG Semiconductors 17E • ECG2052 CM OS 3Vz Digit DVM with Multiplexed 7-Segment Output Features • Operates from single 5 V supply


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    PDF bb5312fl ECG2052 ECG2052 Li53Tafl 00GSL 1999Volts

    MTD7N20

    Abstract: jw 521
    Text: MOTOROLA SC XSTRS/R F EbE D b3b?5S4 GQIGISO 2 Order this data sheet by MTD7N20/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet MTD7N20 P o w e r Field E ffe c t T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S


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    PDF MTD7N20/D TD7N20 MTD7N20 jw 521

    U0100

    Abstract: No abstract text available
    Text: 4bE D • b 7 2 M 2 4 Q D D 1 G D 2 M 124 H O K I J O K I S E M I C O N D U C T O R GR OU P O K I semiconductor 7 MSM28C64A_ T - y ^ / i 8K x 8 BIT C M O S ELEC TR ICA LLY ERA SA B LE & P R O G R A M A B LE ROM G EN ER A L DESCRIPTION The MSM28C64ARS is a CMOS electrically erasable and programmable read only memory


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    PDF MSM28C64A_ MSM28C64ARS 312ps/byte. MSM28C64A T-46-13-27 MSM28C64A U0100

    MCE Semiconductor

    Abstract: No abstract text available
    Text: KS82C88A MICROPROCESSOR BUS CONTROLLER FEATURES/BENEFITS DESCRIPTION • Pin and functional compatibility with the Industry standard 8288 The KS82C88A Bus Controller is a 20-pin CMOS compo­ nent which includes command and control timing generation as well as a bipolar bus drive capability while


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    PDF KS82C88A 10MHz KS82C88A 20-pin 82C88A 10MHz MCE Semiconductor

    2ss9014

    Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
    Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013


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    PDF 71b4142 SS9012 825mW) -500mA) SS9013 Breakdo4142 SS9014 fe-14 1-10C 2ss9014 ss8015 A 671 transistor SS9013 U007 transistor ss9014 T-31-21 50nr

    diode s4 6d

    Abstract: No abstract text available
    Text: S A M S U N G S E M I C O N D U C T O R INC 05 KS54HCTLS C O A KS74HCTLS D E § 7 ci b m M a PD0hS3D Octal D-Type Flip-Flops with 3-State Outputs FEATURES DESCRIPTION • Function, pln-out, speedand drive compatibility with S4/74LS logic family • Low power consumption characteristic ot CMOS


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    PDF KS54HCTLS KS74HCTLS S4/74LS KS74HCTLS: KS54HCTLS: 300-mil 7Tb414S 90-XO 14-Pin diode s4 6d

    Untitled

    Abstract: No abstract text available
    Text: 6A Adjustable, and Fixed 33V and 5V Linear Regulators D e scrip tio n The CS5206 -X series of linear regu­ lators provides 6A at adjustable and fixed voltages of 3.3V and 5V with an accuracy of ±1% and ±2% respectively. The adjustable version uses tw o external resistors to set


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    PDF CS5206 T0-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V16400 304-Word MSM51V16400 cycles/64m BME40

    T2D 96 diode

    Abstract: SAA7350GP philips saa7350gp SAA7350 T2D DIODE T2D DIODE 49 T2D 98 DIODE T2D 65 DIODE T2D DIODE 42 T2D DIODE 96
    Text: P h ilip s S e m ic o n d u c to rs P re lim in a ry S p e c ific a tio n 20-bit input bitstream conversion DAC for digital audio systems SAA7350 FEATURES • Up to 20-bit input • Variety of interface form ats Japanese and l2S • Choice of two system clock


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    PDF 20-bit SAA7350 TDA1547 SAA7350 2896MHz 9344MHz T2D 96 diode SAA7350GP philips saa7350gp T2D DIODE T2D DIODE 49 T2D 98 DIODE T2D 65 DIODE T2D DIODE 42 T2D DIODE 96

    Lo 3.3V

    Abstract: No abstract text available
    Text: Philips S em iconductors P relim inary specification 9-bit D-type flip-flop with 5-volt tolerant inputs/outputs; positive-edge trigger 3-State 74LVC823A FEATURES DESCRIPTION • 5-volt tolerant inputs/outputs, for interfacing with 5-volt logic The 74LVC823A is a high performance, low-power, low-voltage


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    PDF 74LVC823A 74LVC823A SA00423 Lo 3.3V

    SAA7350

    Abstract: SAA7350GP SAA1350 philips saa7350gp A17A CAA79 TDA1547 SD12
    Text: philips Semiconductors Preliminary Specification 20-bit input bitstream conversion PAC for digitai audio systems SAA7350 FEATURES • Up to 20-bit input • Variety of interface formats Japanese and l2S • Choice of two system clock frequencies • Sampling frequency from 16 kHz


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    PDF 20-bit SAA7350 TDA1547 SAA7350 SAA7350GP SAA1350 philips saa7350gp A17A CAA79 TDA1547 SD12

    OS 470 88, VARISTOR

    Abstract: 3500 2231 tz 1290 2SD 388 A diode B4E 1961 su 3gt57 MZ11 selenium rectifier uaa 1300
    Text: EDAL INDUSTRIES INC b4E D 3 C H 5 7 :Lb 0 0 0 D 3 4 7 EDAL TT3 IEDL Metal Oxide Varistors M O V Transient Voltage Suppressors isdSÂlis&îàîBSW'-'-; •váasa*. • Descri pti o n/Featu res Selection Procedure Metal Oxide Varistors and Transient Voltage Suppressors having a non-linear currentvoltage characteristic which sustains an almost


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    PDF 3CH57 000D347 to-007 OS 470 88, VARISTOR 3500 2231 tz 1290 2SD 388 A diode B4E 1961 su 3gt57 MZ11 selenium rectifier uaa 1300