572B-T160L
Abstract: B2329 ABB B45 BB342
Text: MLX75411, MLX75412 Avocet HDR Image Sensors Datasheet Application Examples Features and Benefits 1 1 1 1 1 1 1 1 1 1 1 Automotive Driver Assistance Systems ADAS 1 Lane departure warning (LDW) 1 Forward collision warning (FCW) 1 Automatic high-beam assist
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MLX75411,
MLX75412
154dB
1024x512
ISO14001
Jun/11
572B-T160L
B2329
ABB B45
BB342
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ic08k
Abstract: LTC1417 serial and parallel Analog to digital converter LTC1096 LTC1096L LTC1098 LTC1098L LTC1099 LTC1196 LTC1198
Text: Data Conversion InfoCard 8 Analog-to-Digital Converters Analog-to-Digital Converters Parallel Serial Single 8-Bit LTC1096 5V, Micropower, SO-8 LTC1096L 3V, Micropower, SO-8 LTC1196 3V to 5V, 1Msps, SO-8 10-Bit LTC1092 5V, 38ksps LTC1197 5V, 500ksps, SO-8 LTC1197L 3V, 250ksps, MSOP
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LTC1096
LTC1096L
LTC1196
10-Bit
LTC1092
38ksps
LTC1197
500ksps,
LTC1197L
250ksps,
ic08k
LTC1417
serial and parallel Analog to digital converter
LTC1098
LTC1098L
LTC1099
LTC1198
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sla 4051
Abstract: Philips PCF8833 mv silicon c320 sla 4052 140668 601330 C3657 intel 8951 MX C339 Philips ID33
Text: INTEGRATED CIRCUITS DATA SHEET PCF8833 STN RGB - 132 x 132 × 3 driver Objective specification 2003 Feb 14 Philips Semiconductors Objective specification STN RGB - 132 × 132 × 3 driver PCF8833 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION
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PCF8833
SCA75
403512/01/pp112
sla 4051
Philips PCF8833
mv silicon c320
sla 4052
140668
601330
C3657
intel 8951
MX C339
Philips ID33
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HCTS393DMSR
Abstract: HCTS393HMSR HCTS393KMSR HCTS393MS
Text: HCTS393MS Radiation Hardened Dual 4-Stage Binary Counter August 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCTS393MS
MIL-STD-1835
CDIP2-T14
05A/cm2
HCTS393
TA14490A.
HCTS393DMSR
HCTS393HMSR
HCTS393KMSR
HCTS393MS
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HCTS393D
Abstract: HCTS393HMSR HCTS393KMSR HCTS393MS HCTS393DMSR
Text: HCTS393MS Radiation Hardened Dual 4-Stage Binary Counter August 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCTS393MS
MIL-STD-1835
CDIP2-T14
05A/cm2
HCTS393
TA14490A.
HCTS393D
HCTS393HMSR
HCTS393KMSR
HCTS393MS
HCTS393DMSR
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PMBFJ111
Abstract: PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472
Text: b b S B ' m 0024052 TÔT * A P X Philips Semiconductors PMBFJ111/PMBFJ112/ PMBFJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE PINNING - SOT23 PIN CONFIGURATION FEATURES b?E 1> DESCRIPTION
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PMBFJ111/PMBFJ112/
PMBFJ113
PMBFJ111)
MBB114
PMBFJ112)
PMBFJ113)
DD54DSS
PMBFJ111/PMBFJ112/PMBFJ113
PMBFJ111
PMBFJ112
PMBFJ113
Silicon Junction FETs
Scans-00472
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SG3524AN
Abstract: an170 philips TCA280 NE 555 timer TDA1543A MC 1310 stereo decoder fsk generator using timer 555 LM 272 dual op amp NE5080 application tda1541
Text: Philips Semiconductors Functional Index General-Purpose/Linear ICs Preface. Section 1 General Information .
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Untitled
Abstract: No abstract text available
Text: BR2505 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD. BR2510 T E C H N IC A L S P E C IF IC A T IO N S O F S IN G L E -P H A S E S IL IC O N B R ID G E R E C T IF IE R VOLTAGE RANGE - 5 0 to 1000 Volts CURRENT - 25 Amperes FEATURES
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BR2505
BR2510
ratings-400
IL-STD-202E,
BR2505
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TSM 1416
Abstract: TRANSISTOR C 3068 C2580 BFG16A ts 4141 TRANSISTOR TRANSISTOR D 1691
Text: b t .S a ' ìa i Philips Semiconductors 0024774 _ T i b • APX Product specification NPN 2 GHz wideband transistor BFG16A N APIER P H I L I P S / D I S C R E T E FEATURES b?E D PINNING • High power gain PIN DESCRIPTION • Good thermal stability
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G024774
BFG16A
OT223
OT223.
TSM 1416
TRANSISTOR C 3068
C2580
BFG16A
ts 4141 TRANSISTOR
TRANSISTOR D 1691
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4910E
Abstract: MGF4914E MGF4918E
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series SUPER LOW NOISE InGaAs H E M T j DESCRIPTION The M G F4910E OUTLINE DRAWING series su per-lo w -n oise HEMT U n it m illim e te rs inches (High Electron M o bility Transistor) is designed fo r use in X to
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F4910E
4910E
MGF4914E
MGF4918E
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PMBFJ111
Abstract: No abstract text available
Text: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23
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0024DS2
J111/P
J112/
FJ113
PMBFJ111)
PMBFJ112)
PMBFJ113)
DD24D55
PMBFJ111/PMBFJ112/PMBFJ113
PMBFJ111
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CY7C167
Abstract: CY7C167-25DC i781 7C167
Text: CYPRESS SE MI CONDUCT OR 250^2 MfciE D oodbM^ i acYP CY7CX67 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese lected CMOS for optimum speed/power High speed • — 25 ns Low active power — 275 mW Low standby power — 83 m ff
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CY7C167
CY7C167
CY7C167-45DC
CY7C167-45LC
CY7C167-45VC
CY7C167-45DMB
CY7C167-45LMB
T-46-23-05
CY7C167-25DC
i781
7C167
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1999Volts
Abstract: No abstract text available
Text: * PHILIPS E C G INC ECG Semiconductors 17E • ECG2052 CM OS 3Vz Digit DVM with Multiplexed 7-Segment Output Features • Operates from single 5 V supply
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bb5312fl
ECG2052
ECG2052
Li53Tafl
00GSL
1999Volts
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MTD7N20
Abstract: jw 521
Text: MOTOROLA SC XSTRS/R F EbE D b3b?5S4 GQIGISO 2 Order this data sheet by MTD7N20/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet MTD7N20 P o w e r Field E ffe c t T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S
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MTD7N20/D
TD7N20
MTD7N20
jw 521
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U0100
Abstract: No abstract text available
Text: 4bE D • b 7 2 M 2 4 Q D D 1 G D 2 M 124 H O K I J O K I S E M I C O N D U C T O R GR OU P O K I semiconductor 7 MSM28C64A_ T - y ^ / i 8K x 8 BIT C M O S ELEC TR ICA LLY ERA SA B LE & P R O G R A M A B LE ROM G EN ER A L DESCRIPTION The MSM28C64ARS is a CMOS electrically erasable and programmable read only memory
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MSM28C64A_
MSM28C64ARS
312ps/byte.
MSM28C64A
T-46-13-27
MSM28C64A
U0100
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MCE Semiconductor
Abstract: No abstract text available
Text: KS82C88A MICROPROCESSOR BUS CONTROLLER FEATURES/BENEFITS DESCRIPTION • Pin and functional compatibility with the Industry standard 8288 The KS82C88A Bus Controller is a 20-pin CMOS compo nent which includes command and control timing generation as well as a bipolar bus drive capability while
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KS82C88A
10MHz
KS82C88A
20-pin
82C88A
10MHz
MCE Semiconductor
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2ss9014
Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013
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71b4142
SS9012
825mW)
-500mA)
SS9013
Breakdo4142
SS9014
fe-14
1-10C
2ss9014
ss8015
A 671 transistor
SS9013
U007
transistor ss9014
T-31-21
50nr
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diode s4 6d
Abstract: No abstract text available
Text: S A M S U N G S E M I C O N D U C T O R INC 05 KS54HCTLS C O A KS74HCTLS D E § 7 ci b m M a PD0hS3D Octal D-Type Flip-Flops with 3-State Outputs FEATURES DESCRIPTION • Function, pln-out, speedand drive compatibility with S4/74LS logic family • Low power consumption characteristic ot CMOS
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KS54HCTLS
KS74HCTLS
S4/74LS
KS74HCTLS:
KS54HCTLS:
300-mil
7Tb414S
90-XO
14-Pin
diode s4 6d
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Untitled
Abstract: No abstract text available
Text: 6A Adjustable, and Fixed 33V and 5V Linear Regulators D e scrip tio n The CS5206 -X series of linear regu lators provides 6A at adjustable and fixed voltages of 3.3V and 5V with an accuracy of ±1% and ±2% respectively. The adjustable version uses tw o external resistors to set
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CS5206
T0-220
O-220
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.
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MSM51V16400
304-Word
MSM51V16400
cycles/64m
BME40
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T2D 96 diode
Abstract: SAA7350GP philips saa7350gp SAA7350 T2D DIODE T2D DIODE 49 T2D 98 DIODE T2D 65 DIODE T2D DIODE 42 T2D DIODE 96
Text: P h ilip s S e m ic o n d u c to rs P re lim in a ry S p e c ific a tio n 20-bit input bitstream conversion DAC for digital audio systems SAA7350 FEATURES • Up to 20-bit input • Variety of interface form ats Japanese and l2S • Choice of two system clock
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20-bit
SAA7350
TDA1547
SAA7350
2896MHz
9344MHz
T2D 96 diode
SAA7350GP
philips saa7350gp
T2D DIODE
T2D DIODE 49
T2D 98 DIODE
T2D 65 DIODE
T2D DIODE 42
T2D DIODE 96
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Lo 3.3V
Abstract: No abstract text available
Text: Philips S em iconductors P relim inary specification 9-bit D-type flip-flop with 5-volt tolerant inputs/outputs; positive-edge trigger 3-State 74LVC823A FEATURES DESCRIPTION • 5-volt tolerant inputs/outputs, for interfacing with 5-volt logic The 74LVC823A is a high performance, low-power, low-voltage
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74LVC823A
74LVC823A
SA00423
Lo 3.3V
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SAA7350
Abstract: SAA7350GP SAA1350 philips saa7350gp A17A CAA79 TDA1547 SD12
Text: philips Semiconductors Preliminary Specification 20-bit input bitstream conversion PAC for digitai audio systems SAA7350 FEATURES • Up to 20-bit input • Variety of interface formats Japanese and l2S • Choice of two system clock frequencies • Sampling frequency from 16 kHz
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20-bit
SAA7350
TDA1547
SAA7350
SAA7350GP
SAA1350
philips saa7350gp
A17A
CAA79
TDA1547
SD12
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OS 470 88, VARISTOR
Abstract: 3500 2231 tz 1290 2SD 388 A diode B4E 1961 su 3gt57 MZ11 selenium rectifier uaa 1300
Text: EDAL INDUSTRIES INC b4E D 3 C H 5 7 :Lb 0 0 0 D 3 4 7 EDAL TT3 IEDL Metal Oxide Varistors M O V Transient Voltage Suppressors isdSÂlis&îàîBSW'-'-; •váasa*. • Descri pti o n/Featu res Selection Procedure Metal Oxide Varistors and Transient Voltage Suppressors having a non-linear currentvoltage characteristic which sustains an almost
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3CH57
000D347
to-007
OS 470 88, VARISTOR
3500 2231
tz 1290
2SD 388 A
diode B4E
1961 su
3gt57
MZ11
selenium rectifier
uaa 1300
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