1X1011RAD Search Results

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Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)