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    1X1011 Price and Stock

    Bourns Inc 4611X-101-154LF

    RES ARRAY 10 RES 150K OHM 11SIP
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    DigiKey 4611X-101-154LF Bulk 2,000 1
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    • 1000 $0.11435
    • 10000 $0.1076
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    Avnet Americas 4611X-101-154LF Bulk 15 Weeks 2,000
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    Mouser Electronics 4611X-101-154LF 1,693
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    Newark 4611X-101-154LF Bulk 2,000
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    Bristol Electronics 4611X-101-154LF 1,800
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    Avnet Abacus 4611X-101-154LF 18 Weeks 2,000
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    Bourns Inc 4611X-101-101LF

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    DigiKey 4611X-101-101LF Bulk 1,919 1
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    Avnet Americas 4611X-101-101LF Bulk 15 Weeks 2,000
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    Mouser Electronics 4611X-101-101LF 2,354
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    Avnet Abacus 4611X-101-101LF 18 Weeks 2,000
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    Bourns Inc 4611X-101-102LF

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    DigiKey 4611X-101-102LF Bulk 1,625 1
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    Avnet Americas 4611X-101-102LF Bulk 15 Weeks 2,000
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    Mouser Electronics 4611X-101-102LF 530
    • 1 $0.64
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    • 100 $0.191
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    Newark 4611X-101-102LF Bulk 841 1
    • 1 $0.657
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    • 100 $0.334
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    RS 4611X-101-102LF Bulk 17 Weeks 2,000
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    Avnet Abacus 4611X-101-102LF 18 Weeks 2,000
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    Bourns Inc 4611X-101-100LF

    RES ARRAY 10 RES 10 OHM 11SIP
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    DigiKey 4611X-101-100LF Bulk 2,000
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    Mouser Electronics 4611X-101-100LF
    • 1 $0.61
    • 10 $0.435
    • 100 $0.227
    • 1000 $0.123
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    Newark 4611X-101-100LF Bulk 2,000
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    RS 4611X-101-100LF Bulk 17 Weeks 2,000
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    Master Electronics 4611X-101-100LF
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    Bourns Inc 4611X-101-152LF

    RES ARRAY 10 RES 1.5K OHM 11SIP
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    DigiKey 4611X-101-152LF Bulk 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.11737
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    Avnet Americas 4611X-101-152LF Bulk 15 Weeks 2,000
    • 1 -
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    • 10000 $0.11449
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    Mouser Electronics 4611X-101-152LF 337
    • 1 $0.61
    • 10 $0.435
    • 100 $0.227
    • 1000 $0.123
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    Newark 4611X-101-152LF Bulk 2,000
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    • 10000 $0.118
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    RS 4611X-101-152LF Bulk 17 Weeks 2,000
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    Master Electronics 4611X-101-152LF
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    1X1011 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4N35 application note

    Abstract: 4n35 IC 4N35 4N35 applications ic 4n35 data sheet 4n35 datasheet 4N35 circuits 4N35M-V of ic 4n35 4N35 application
    Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High crrent transfer ratio CTR : MIN. 100% at IF = 10mA, VCE = 10V * Response time ( ton : TYP. 3µs at VCC = 10V, IC = 2mA, RL = 100Ω ) * Input-output isolation voltage 4N35-V series : Viso = 3,550Vrms


    Original     		4N35-V 550Vrms 4N37-V 500Vrms 4N35-V, 4N37-V 4N35M-V, 4N37M-V 4N35S-V, 4N37S-V 4N35 application note 4n35 IC 4N35 4N35 applications ic 4n35 data sheet 4n35 datasheet 4N35 circuits 4N35M-V of ic 4n35 4N35 application PDF

    E113898

    Abstract: LTV-725F LTV-725FM LTV-725FS LTV-725FS-TA1 725f
    Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High collector-emitter voltage VCEO : 300V * High current transfer ratio ( CTR : MIN. 1,000 at IF=1mA, VCE=2V) * High isolation voltage between input and output ( VISO = 5,000Vrms ) * Low collector dark current


    Original     		000Vrms LTV-725F LTV-725FM LTV-725FS LTV-725FS-TA1 E113898 R9653630 CA91533-1 P99102464 E113898 LTV-725F LTV-725FM LTV-725FS LTV-725FS-TA1 725f PDF

    LTV-852S

    Abstract: E113898 LTV-852 LTV-852M LTV-852S-TA1 LTV-8D52 LTV-8D52M LTV-8D52S LTV-8D52S-TA1
    Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High current transfer ratio CTR : MIN. 1000% at IF = 1mA, VCE = 2V * High input-output isolation voltage ( Viso = 5,000Vrms ) * High collector-emitter voltage ( VCEO = 300V ) * Dual-in-line package :


    Original     		000Vrms LTV-852 LTV-8D52 LTV-852M LTV-8D52M LTV-852S LTV-8D52S LTV-852S-TA1, LTV-8D52S-TA1 E113898 LTV-852S E113898 LTV-852 LTV-852M LTV-852S-TA1 LTV-8D52 LTV-8D52M LTV-8D52S LTV-8D52S-TA1 PDF

    E113898

    Abstract: LTV-724F LTV-724FM LTV-724FS R9653630
    Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High isolation voltage between input and output * High input current IF : MAX. 150 mA * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * Current transfer ratio ( CTR : 20% ~ 80% at IF = 100mA, VCE = 2V )


    Original     		100mA, 000Vrms LTV-724F LTV-724FM LTV-724FS LTV-724FS-TA1 E113898 R9653630 CA91533-1 P9810lector-emitter E113898 LTV-724F LTV-724FM LTV-724FS R9653630 PDF

    PC 814 photocoupler

    Abstract: LTV824-V Lite-On LTV814 LTV814-V LTV824STA1-V mark code t4 diode LTV-814 LTV814STA1-V LTV814S-V LTV824M-V
    Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-814 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV814-V : 1-channel type / LTV824-V : 2-channel type /


    Original     		LTV-814 LTV814-V LTV824-V LTV844-V LTV814M-V LTV824M-V LTV844M-V LTV814S-V LTV824S-V LTV844S-V PC 814 photocoupler LTV824-V Lite-On LTV814 LTV814-V LTV824STA1-V mark code t4 diode LTV814STA1-V LTV814S-V LTV824M-V PDF

    PC3Q67QJ000F

    Abstract: pc3q67q E64380 EN60747-5-2 PC3H7J00000F VDE0884
    Text: PC3Q67QJ000F Series Mini-flat Half Pitch 4-channel Package, General Purpose Photocoupler PC3Q67QJ000F Series * 1-channel package type is also available. model No. PC3H7J00000F Series • Description ■ Agency approvals/Compliance PC3Q67QJ000F Series contains an IRED optically


    Original     		PC3Q67QJ000F PC3Q67QJ000F PC3H7J00000F UL1577 E64380 PC3Q67Q) EN60747-5-2 D2-A02002EN pc3q67q E64380 EN60747-5-2 VDE0884 PDF

    LTV-123-V

    Abstract: IEC68 LTV-123 LTV-123M LTV-123M-V LTV-123S LTV-123S-TA1-V LTV-123S-V
    Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-123 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV-123-V : 1-channel type * Wide lead spacing package :


    Original     		LTV-123 LTV-123-V LTV-123M-V LTV-123S-V LTV-123S-TA1-V LTV-123M LTV-123S LTV-123 BNS-OD-C131/A4 LTV-123-V IEC68 LTV-123M-V LTV-123S LTV-123S-TA1-V LTV-123S-V PDF

    GEC Plessey Semiconductors cross reference

    Abstract: BMA31751 MA17501 MA17502 MA17503 MA31751 MAS281 AD00 TI MIL-STD-1750A E04A
    Text: MAS281 MAS281 MIL-STD-1750A Microprocessor Replaces June 1999 version, DS3563-4.0 The MAS281 Microprocessor is a MIL-STD-1750A Notice 1 , 16-bit Central Processing Unit (CPU). It consists of three CMOS/SOS large-scale integration (LSI) chips: the MA17501


    Original     		MAS281 MIL-STD-1750A DS3563-4 MAS281 MIL-STD-1750A 16-bit MA17501 MA17502 MA17503 GEC Plessey Semiconductors cross reference BMA31751 MA17501 MA31751 AD00 TI E04A PDF

    E210

    Abstract: E64380 PC3Q410NIP0F
    Text: PC3Q410NIP0F Mini-flat Half Pitch 4-channel Package, High CMR, AC Input, Low Input Current Photocoupler PC3Q410NIP0F ∗ 1-channel package type is also available. model No. PC3H41xNIP0F Series • Description ■ Agency approvals/Compliance PC3Q410NIP0F contains a IRED optically coupled


    Original     		PC3Q410NIP0F PC3H41xNIP0F PC3Q410NIP0F UL1577 E64380 PC3Q41) D2-A02202EN E210 E64380 PDF

    E64380

    Abstract: PC814 PC814X PC814XP PC844X VDE0884
    Text: PC814X Series DIP 4pin AC Input Photocoupler PC814X Series ∗ 4-channel package type is also available. model No. PC844X Series • Description ■ Agency approvals/Compliance PC814X Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP, available in SMT gullwing lead-form option.


    Original     		PC814X PC844X UL1577, E64380 PC814) D2-A03502EN E64380 PC814 PC814XP VDE0884 PDF

    pc353

    Abstract: D2006 E195 E64380 PC353TJ0000F sharp rohs marking
    Text: PC353TJ0000F PC353TJ0000F Mini-flat Package Includes Base Terminal Connection Photocoupler • Description ■ Agency approvals/Compliance PC353TJ0000F contains an IRED optically coupled to a phototransistor. It is packaged in a 5-pin Mini-flat with Base terminal.


    Original     		PC353TJ0000F PC353TJ0000F UL1577 E64380 PC353) D2-A00402EN pc353 D2006 E195 E64380 sharp rohs marking PDF

    PC8171xNIP

    Abstract: PC8171 PC81712NIP PC81716NIP E64380 PC81710NSZ PC81711NSZ PC81712NSZ PC81713NSZ PC81715NSZ
    Text: PC8171xNSZ Series PC8171xNSZ Series DIP 4pin High CMR, Low Input Current Photocoupler • Description ■ Agency approvals/Compliance PC8171xNSZ Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP, available in SMT gullwing lead-form option.


    Original     		PC8171xNSZ PC8171xNSZ UL1577 E64380 PC8171) D2-A03301EN PC8171xNIP PC8171 PC81712NIP PC81716NIP E64380 PC81710NSZ PC81711NSZ PC81712NSZ PC81713NSZ PC81715NSZ PDF

    PC714V1NSZX

    Abstract: E64380 PC714V PC714V0NSZX PC714V0YSZX VDE0884
    Text: PC714VxNSZX Series PC714VxNSZX Series DIP 6 pin General Purpose Photocoupler • Description ■ Agency approvals/Compliance PC714VxNSZX Series contains an IRED optically coupled to a phototransistor. It is packaged in a 6 pin DIP. Input-output isolation voltage rms is 5.0kV.


    Original     		PC714VxNSZX PC714VxNSZX UL1577 E64380 PC714V) VDE0884) R-9151576 D2-A04101EN PC714V1NSZX E64380 PC714V PC714V0NSZX PC714V0YSZX VDE0884 PDF

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * Directly connectable to TTL * High collector-emitter voltage VCEO = 70V * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * High input-output isolation voltage ( Viso = 5,000Vrms )


    Original     		000Vrms LTV-703F LTV-703FM LTV-703FS LTV-703FS-TA1 E113898 R9653630 CA91533-1 P96103013 PDF

    4N35 application

    Abstract: 4N35 applications 4N35 CONTROL CIRCUIT 4N35 ic 4n35 Control 4N35
    Text: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of LITE-ON Only FEATURES * High crrent transfer ratio CTR : MIN. 100% at IF = 10mA, VCE = 10V * Response time ( ton : TYP. 3µs at VCC = 10V, IC = 2mA, RL = 100Ω ) * Input-output isolation voltage


    Original     		550Vrms 500Vrms 4N35M, 4N37M 4N35S, 4N37S 4N35S-TA1, 4N37S-TA1 BNS-OD-C131/A4 4N35 application 4N35 applications 4N35 CONTROL CIRCUIT 4N35 ic 4n35 Control 4N35 PDF

    MCX RF

    Abstract: HCD220
    Text: OCXO Sine Output HCD220 Specifications Product Parameters Frequency range: Optional SMA/B/C/BNC/MCX RF connector s 10.00 PIN 50.00 17.00 15.90 A A Fixing holes M3 tapped. Penetration 5mm max. A Freq adjust (+ve) 2 Fine adjust 3 Freq adjust (-ve) 4 Isolated RF output


    Original     		HCD220 5x10-7 HCD220/DRFND HCD220/FTFND HCD220/DRFNA HCD220/FTFNA 1x10-9 2x10-10 MCX RF HCD220 PDF

    MA28140

    Abstract: PSS-04-107 DS3839-7 Transponder ID 48 audi Security Transponder DYNEx telemetry command protocol TTC-B-01
    Text: MA28140 MA28140 Packet Telecommand Decoder • Built-in Command Pulse Distribution Unit Core Logic ■ Radiation Hard to 1MRads Si ■ High SEU Immunity, Latch-up Free 12 14 TCC0-5 TCS0-5 TCA0-5 VDD GND PTD CPDUSTN CPDUEN CPDUDIV MAPSTN MAPCK MAPDSR MAPDTR


    Original     		MA28140 MA28140 PSS-04-107 DS3839-7 Transponder ID 48 audi Security Transponder DYNEx telemetry command protocol TTC-B-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)


    OCR Scan     		HX9100 1x101 1x1012rad 1x101/cm2 HX9100 4SS1A72 PDF

    HX6408

    Abstract: No abstract text available
    Text: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)


    OCR Scan     		HX6408 5x105rad 1x109 1x101 40-Lead D2888 3Q172S HX6408 PDF

    Untitled

    Abstract: No abstract text available
    Text: S5E J> m 4 5 5 1 0 7 3 0 0 0 0 0 3 0 4 22 • Honeywell H0N3 - HONEYlüELL/S S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES RADIATION OTHER • Fabricated with RICMOS Silicon on Insulator


    OCR Scan     		HX6828 1x106 1x101 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		HLX6408 5x10srad 1x101 1x109 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		HLX6256 1x106ra 1x10l4 1x101 4551A72 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		HX6228 1x106 1x101 1x109 32-Lead PDF

    Untitled

    Abstract: No abstract text available
    Text: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.


    OCR Scan     		C4159 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA PDF