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Toshiba America Electronic Components 1SS384TE85LF DIODE ARR SCHOTT 10V 100MA USQ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS384TE85LF	Cut Tape	12,990		1	1 $0.35 10 $0.213 100 $0.35 1000 $0.08792 10000 $0.08792	Buy Now
	1SS384TE85LF	Digi-Reel	12,990		1	1 $0.35 10 $0.213 100 $0.35 1000 $0.08792 10000 $0.08792	Buy Now
	1SS384TE85LF	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.07371	Buy Now
Mouser Electronics	1SS384TE85LF		9,168			1 $0.29 10 $0.187 100 $0.086 1000 $0.077 10000 $0.051	Buy Now
Toshiba America Electronic Components 1SS384(TE85L,F) Diode Small Signal Schottky Si 15V 0.1A 4-Pin USQ T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	1SS384(TE85L,F)		2,100		196	1 - 10 - 100 - 1000 $0.1055 10000 $0.0986	Buy Now
	1SS384(TE85L,F)		1,575		410	1 - 10 - 100 - 1000 $0.1783 10000 $0.1783	Buy Now
	1SS384(TE85L,F)		1,500		1,191	1 - 10 - 100 - 1000 - 10000 $0.0614	Buy Now
Newark	1SS384(TE85L,F)	Cut Tape	30,600		1	1 $0.042 10 $0.042 100 $0.042 1000 $0.042 10000 $0.042	Buy Now
Quest Components	1SS384(TE85L,F)		1,260			1 $0.61 10 $0.61 100 $0.61 1000 $0.244 10000 $0.244	Buy Now
Chip1Stop	1SS384(TE85L,F)	Cut Tape	2,100			1 - 10 - 100 $0.128 1000 $0.0844 10000 $0.0789	Buy Now
EBV Elektronik	1SS384(TE85L,F)			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 1SS384(TE85L)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1SS384(TE85L)		1,489			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	1SS384(TE85L)		1,191			1 $0.294 10 $0.294 100 $0.1323 1000 $0.0882 10000 $0.0882	Buy Now

1SS384 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
1SS384	Toshiba	Japanese - Diodes	Original	PDF
1SS384	Toshiba	shottky barrier diode	Original	PDF
1SS384	Toshiba	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)	Scan	PDF
1SS384	Toshiba	DIODE	Scan	PDF
1SS384(TE85L,F)	Toshiba	1SS384 - Diode Small Signal Schottky 15V 0.1A 4-Pin USQ T/R	Original	PDF
1SS384TE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 10V 100MA USQ	Original	PDF

1SS384 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1SS384 Abstract: No abstract text available Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol	Original	PDF	1SS384 1SS384
1SS384 Abstract: No abstract text available Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic	Original	PDF	1SS384 1SS384
1SS384 Abstract: No abstract text available Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic	Original	PDF	1SS384 1SS384
Untitled Abstract: No abstract text available Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic	Original	PDF	1SS384 100mA
Untitled Abstract: No abstract text available Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic	Original	PDF	1SS384 10mitation,
Untitled Abstract: No abstract text available Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol	Original	PDF	1SS384 961001EAA2'
1SS384 Abstract: No abstract text available Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic	Original	PDF	1SS384 1SS384
1SS384 Abstract: No abstract text available Text: 1SS384 東芝ダイオードシリコンエピタキシャルショットキバリア形 1SS384 ○ 低電圧高速スイッチング用単位: mm z 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており超高密度実装に最適です。	Original	PDF	1SS384 100mA 1SS384
SCJ0004N Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT Text: 東芝半導体製品総覧表 2009 年 7 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	PDF	SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	PDF	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Variable Capacitance Diodes Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	PDF	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	PDF	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R
39T0167 Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A Text: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3	Original	PDF	DEC/07/04 J79495 39T0167 1/16W R1003 R1002 LMV431 R1004 39T0167 U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
cdb 400E Abstract: Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b Text: A B C D E F G H J K L M N DATE 9 APOLLO-9 PLANAR VER 0.60 REL RED RED M9/KINNERETH-R BASE DEC/26/2003 7 6 5 4 3 2 1 13R1151 A TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING MCH-M(1/4) MCH-M(2/4) MCH-M(3/4) MCH-M(4/4) DDR SO DIMM CONNECTOR 0	Original	PDF	13R1151 J46283 J46283A J46283B DEC/26/2003 1/16W 1/16W cdb 400E Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b

558B Abstract: S558-5999-U1 F ky U10 ADP3205 PMH4 C949 Text: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E G F H J K L M N DATE 9 YUKON/KODIAK VER SE 10/20/03 PLANAR 10/20/2003 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING GMCH-M(1/5) GMCH-M(2/5) GMCH-M(3/5) GMCH-M(4/5) GMCH-M(5/5)	Original	PDF	AD1981B VINT16 C1000 C1001 558B S558-5999-U1 F ky U10 ADP3205 PMH4 C949
73D31 Abstract: D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394 Text: Intel Mobile CPU Clock Generator ICS954204 IDTCV139/CY28441 14 Y Note-6 Block Diagram Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 3,4,5 AGTL+ FSB Thermal Sensor LM26 DDR2 SODIMM Socket 4 6,7,8,9,10 SMBus ATMEL AT24RF08CN 48 HDD	Original	PDF	ICS954204 IDTCV139/CY28441 73GHz 87GHz/2AGHz/2 39T5202 400/533MHz 200-PIN 400/533MHz LM75X2 73D31 D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394
PMH4 Abstract: ADP3205 S558-599 t9 547B34 qm77 ky U10 357n c840 TP231005 ibm apollo Text: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E F G H J K L M N DATE 9 YUKON/KODIAK VER SE PLANAR 10/20/03 EC NO. P PART Q NO. VER.SE 9 DEVELOPMENT NO. Q/M 1 6 5 4 3 2 1 78 10/20/2003 8 7 / 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20.	Original	PDF	AD1981B VINT16 C1000 C1001 PMH4 ADP3205 S558-599 t9 547B34 qm77 ky U10 357n c840 TP231005 ibm apollo
BI 335A Abstract: PC8394T PC8394 EZJ1V270GA IBM 88sa8040 88sa8040 adp3205 NLFC322522T-091M-GPF SI4435ADY KT 117B Text: A B C D E F G H J K L M N DATE DEV JUNEAU-5 PLANAR SIT 9 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 8 7 6 5 4 3 2 1 TITLE PAGE 45. EC HISTORY	Original	PDF	OCT/25/04 VCC05 1/16W R1002 R1003 LMV431 R1004 BI 335A PC8394T PC8394 EZJ1V270GA IBM 88sa8040 88sa8040 adp3205 NLFC322522T-091M-GPF SI4435ADY KT 117B
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	PDF	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	PDF	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Untitled Abstract: No abstract text available Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o	OCR Scan	PDF	1SS384 SS384
1SS384 Abstract: EL marking Text: 1SS384 TOSHIBA TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 2 = 0.23V (TYP.) )Ijr = 5mA M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	1SS384 961001EAA2' 1SS384 EL marking
Untitled Abstract: No abstract text available Text: 1SS384 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 3 84 LOW VOLTAGE HIGH SPEED SWITCHING • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 2 = 0.23V (TYP.) (a)Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	1SS384 961001E
Untitled Abstract: No abstract text available Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o	OCR Scan	PDF	1SS384 SS384

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1SS384 Price and Stock

Toshiba America Electronic Components 1SS384TE85LF

Toshiba America Electronic Components 1SS384(TE85L,F)

Toshiba America Electronic Components 1SS384(TE85L)

1SS384 Datasheets (6)

1SS384 Datasheets Context Search

1SS384

1SS384

1SS384

Untitled

Untitled

Untitled

1SS384

1SS384

SCJ0004N

lm2804

Variable Capacitance Diodes

SSM3J307T

39T0167

cdb 400E

558B

73D31

PMH4

BI 335A

smd code book

ESM 740

Untitled

1SS384

Untitled

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