diode cross reference 1s1555
Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Text: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,
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DO-35
1S1555,
1S1588
1SS104
1S1553,
1S1554
1S953
MA161
1S1586,
1S1587
diode cross reference 1s1555
diode cross reference 1s2473
IPS302
1SS211
1S2473 DIODE equivalent
1S2473 DIODE
toshiba diode do-41
1s1555 diode
1ss202
1SS153
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marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
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HVD141/142
HZU16
HZU10
HZU18
HZU11
HZU20
HZU12
HZU22
HZU13
HZU24
marking code 62z
philips surface mount zener diode v6
marking 68m sot 23-5
1S2473 equivalent
DIODE ROHM 3pin Marking A7
IPS302
marking 62z SOT23
diode S4 68a
1ss81 diode equivalent
1S2473 DIODE equivalent
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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C11178JJCV0IF0012
C11178JJCV0IF
MIL-HDBK-217
MILMIL10100
MIL-HDBK-217Fit
2sk2500
UPC1037HA
UPC648C
2SK927
NEC 2SK2500
uPD5201G
UPA64HA
UPD6360C
2SH24
n13t1
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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1S955
Abstract: 2SA1458 2SC3731
Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be
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2SA1458
2SC3731
PW300ns
1S955
1S955
2SA1458
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1S955
Abstract: 2SA1458 2SC3731
Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be
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2SA1458
2SC3731
PW300ns
1S955
1S955
2SA1458
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1S955
Abstract: 2SA1458 2SC3731
Text: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be
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2SC3731
2SA1458
300ns
1S955
1S955
2SC3731
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MIL-HDBK-217
C11178EJCV0IF
transistor NEC 2SK2500
NEC 2SK2500
2SK2500
N13T1
2SK2500 equivalent
UPC1037HA
UPC648C
2sh25
2sk2500 transistor
2SH24
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1S955
Abstract: 2SA1458 2SC3731
Text: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be
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2SC3731
2SA1458
300ns
1S955
1S955
2SC3731
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bt type 47 relay
Abstract: MR62-12USB 1S955 MR62 relay BT 47 Relay MR62 MR62-24USB BT type 47 MR62-48u MR622
Text: DPDT Signal Relay • DIL package ■ BT type 47 approved ■ 1500V FCC surge between coil and contacts and adjacent contacts ■ Fully sealed for immersion cleaning ■ Bifurcated crossbar contacts for high reliability ■ UL/CSA approved MR62/47 Part Numbers
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MR62/47
MR62-4
MR62-9USB
MR62-12USB
MR62-24USB
MR62-48USB
1S955)
bt type 47 relay
MR62-12USB
1S955
MR62 relay
BT 47 Relay
MR62
MR62-24USB
BT type 47
MR62-48u
MR622
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1S955
Abstract: 2SA1458 2SC3731
Text: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be
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2SA1458
2SC3731
PW300ns
1S955
1S955
2SA1458
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1S955
Abstract: 2SA1458 2SC3731
Text: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be
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2SC3731
2SA1458
300ns
1S955
1S955
2SC3731
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diodos
Abstract: R024M R082F 1S963 1SS53 RD27E 5w r010j r010j RD27F RD100E
Text: TT* KJ Dioaes i — • Zonor D iod os DHO C o nstruction P lan ar Typo • S w itch in g D iod os V r (V) 30 50 75 30 50 75 Typo No. 1S963 1S954 1S955 1SS53 1SS54 1SS55 lo (mA) 100 200 200 100 100 100 P -0 .4 W • Tw in Diodas Typo No. 152835 152836 152837
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1S963
1S964
1S955
1SS53
1SS54
1SS55
RD10M
RD11M
RD12M
RD13M
diodos
R024M
R082F
RD27E
5w r010j
r010j
RD27F
RD100E
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1S953
Abstract: 1s954 1S955 NEC 1S953
Text: NEC S IL IC O N S W IT C H IN G D IO D ES BICimM KVKE 1S953,1S954,1S955 HIGH SPEED SW ITCHING SILICON EPITAXIAL DIODES DESCR IPTIO N The 1S953, 1S954 and 1S955 are silicon epitaxial diodes designed for high speed switching applications. FEA TU R ES PACKAGE D IM E N S IO N S
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1S953
1S954
1S955
1S953,
1S955
1S954
NEC 1S953
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2SA1464
Abstract: 1S955 2SC3739
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1464 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High f T : f T = 4 0 0 M H z 2.8 ± 0.2 • Complementary to 2S C 3739
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2SA1464
2SA1464
1S955
2SC3739
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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RD13M
Abstract: RD2.4M 1SS53 zener rd9.1eb
Text: N E C ELECTRONICS INC E Diodes S=IC D ~'r 9m •ÈÜ t>427555 O D D b l D E VR V 30 50 75 30 50 75 lo (mA) 100 200 200 100 100 100 VR(V) '30 50 30 50 I f (mA) 150 (100) 150 (100) 150 (100) 150 (100) P = 0.4W Common Anode Common Cathode Common • Zener Diodes (Mini-Mold Type)
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1S953
1S954
1S955
1SS53
1SS54
1SS55
RD10E
RD11E
RD12E
RD13E
RD13M
RD2.4M
zener rd9.1eb
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1S955
Abstract: IC 1458 2SA1458 2SC3731 cb-40 nec
Text: PNP SILICON TRANSISTOR 2SA1458 DESCRIPTION The 2SA1458 is designed for general purpose amplifier and high PACKAGE DIMENSIONS speed switching applications. in millimeters inches FEATURES • 4 .2 MAX. (0.165 MAX.) High Frequency Current Gain. • High Speed Switching.
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2SA1458
2SA1458
2SC3731
PWS300
1S955
IC 1458
cb-40 nec
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K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
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SC-59
DO-35
SC-63)
T0-220AB
K68A
a1f4m
A1A4M
R1Ik
N1A4M
2SK104
2SA1138
a1l4m
n1f4m
2SD1557
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Lem LT 300 - t
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2 S A 1 4 6 4 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATU RES P A C K A G E DIMENSIONS in m illim e te rs • H ig h f T : f T = 4 0 0 M H z 2-8±0.2 • C o m p lem en tary to 2 S C 3 7 3 9
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2SA1464
Lem LT 300 - t
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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1N4532
Abstract: 1N4448-A 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531 1N4533
Text: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536
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1N4446
500mW
1N4447
1N4447
1N4448
1N4448
1S801
1N4532
1N4448-A
1N4449
1N4450
1N4454
1N4531
1N4533
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1N4532
Abstract: 1S954 1N4536 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531
Text: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536
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1N4446
500mW
1N4447
1N4447
1N4448
1N4448
sc-11
1N4532
1S954
1N4536
1N4449
1N4450
1N4454
1N4531
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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