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TE Connectivity H891RFDA RES 91 OHM 1% 1/4W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H891RFDA	Bulk			500	1 - 10 - 100 - 1000 $0.36584 10000 $0.36584	Buy Now
Avnet Abacus	H891RFDA			17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	H891RFDA		439			1 $0.94 10 $0.84 100 $0.609 1000 $0.356 10000 $0.343	Buy Now
Farnell	H891RFDA	Each		12 Weeks	500	1 - 10 - 100 - 1000 £0.283 10000 £0.283	Buy Now
Master Electronics	H891RFDA					1 - 10 - 100 - 1000 $0.4005 10000 $0.3348	Buy Now
TE Connectivity H811RFDA RES 11 OHM 1% 1/4W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H811RFDA	Bulk			500	1 - 10 - 100 - 1000 $0.36584 10000 $0.36584	Buy Now
Avnet Abacus	H811RFDA			17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Farnell	H811RFDA	Each		12 Weeks	500	1 - 10 - 100 - 1000 £0.283 10000 £0.283	Buy Now
Master Electronics	H811RFDA					1 - 10 - 100 - 1000 $0.4005 10000 $0.3348	Buy Now
TE Connectivity H851RFDA RES 51 OHM 1% 1/4W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H851RFDA	Bulk			500	1 - 10 - 100 - 1000 $0.36584 10000 $0.36584	Buy Now
Avnet Abacus	H851RFDA			17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	H851RFDA					1 $0.94 10 $0.84 100 $0.609 1000 $0.356 10000 $0.343	Get Quote
Farnell	H851RFDA	Each		12 Weeks	500	1 - 10 - 100 - 1000 £0.283 10000 £0.283	Buy Now
Master Electronics	H851RFDA					1 - 10 - 100 - 1000 $0.4005 10000 $0.3348	Buy Now
TE Connectivity H8681RFDA RES 681 OHM 1% 1/4W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H8681RFDA	Bulk			500	1 - 10 - 100 - 1000 $0.36584 10000 $0.36584	Buy Now
Avnet Abacus	H8681RFDA			17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	H8681RFDA					1 $0.94 10 $0.84 100 $0.609 1000 $0.356 10000 $0.35	Get Quote
Farnell	H8681RFDA	Each		12 Weeks	500	1 - 10 - 100 - 1000 £0.283 10000 £0.283	Buy Now
Avnet Americas	H8681RFDA	Reel		12 Weeks, 6 Days	500	1 - 10 - 100 - 1000 $0.30861 10000 $0.28982	Buy Now

Master Electronics	H8681RFDA					1 - 10 - 100 - 1000 $0.4005 10000 $0.3348	Buy Now
TE Connectivity H4P221RFDA H4P 221R 1% 25PPM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H4P221RFDA	Box			500	1 - 10 - 100 - 1000 $0.61118 10000 $0.61118	Buy Now
Avnet Abacus	H4P221RFDA			15 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	H4P221RFDA	Bulk		12 Weeks, 6 Days	500	1 - 10 - 100 - 1000 $0.41745 10000 $0.39205	Buy Now
Master Electronics	H4P221RFDA					1 - 10 - 100 - 1000 $0.5418 10000 $0.4408	Buy Now

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1RFD Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFD210 Abstract: diode 3a05 IRFD213 Text: IRFD210, IRFD213 « I S ilic o n ix J-W in c o rp o ra te d N-Channel Enhancement Mode Transistors "'Z°i-OS 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY PART NUMBER V(BR\|DSS fDS(ON) (n> Id (A) 1RFD210 200 1.5 0.60 IRFD213 150 2.4 0.45 1 Œ s 2 CC	OCR Scan	PDF	IRFD210, IRFD213 O-250) 1RFD210 IRFD213 IRFD210 diode 3a05
F111 Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25 Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR	OCR Scan	PDF	1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25
k 3525 MOSFET Abstract: IRFD1ZO irfd1z3 Text: HE 0 I MâSS4SH 0000300 b \| Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP	OCR Scan	PDF	T-35-25 C-133 S54S2 C-134. k 3525 MOSFET IRFD1ZO irfd1z3
F111 Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss	OCR Scan	PDF	1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
Power MOSFET in a HEXDIP package Abstract: 1RFD9110 Amp. mosfet 1000 watt AN-953 IRFD9110 Text: APPLICATION NOTE 953 More Power from HEXDIPs f H E X D IP a n d H E XFET are tra d e m a rk s lo r In te rn a tio n a l R e c tifie r P ow er M O S F E T s by STEVE B R O W N and G A IL XEN A K IS International Rectifier’s H E X D I P power M O S F E T , a 4-pin dual in-line	OCR Scan	PDF	O-220 AN-953 Power MOSFET in a HEXDIP package 1RFD9110 Amp. mosfet 1000 watt IRFD9110
Untitled Abstract: No abstract text available Text: • 4302271 0054105 T20 ■ 23 HARRIS HAS IRFD210/211/212/213 IRFD21 OR/211R/212R/213R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1991 Features Package 4 -P IN D IP • 0.6A and 0.45A, 1SOV - 200V TOP VIEW • rDS on = 1-5 fl an(l 2-4 fl • Single Pulse Avalanche Energy Rated*	OCR Scan	PDF	IRFD210/211/212/213 IRFD21 OR/211R/212R/213R IRFD210, IRFD211, IRFD212, IRFD213 IRFD210R, IRFD211R, IRFD212R,
Untitled Abstract: No abstract text available Text: h a r ^ IRFD220, IRFD221, IRFD222, IRFD223 s s e m i c o n d u c t o r 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFD220, IRFD221, IRFD222, IRFD223
1RFD210 Abstract: IRFD210 Text: International [rag Rectifier PD-9.386G IRFD210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = 2 0 0 V	OCR Scan	PDF	IRFD210 1RFD210
1RFD123 Abstract: IRFD 123R fd120 IRFD 120 IRFD 123 Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*	OCR Scan	PDF	IRFD120/121/122/123 12OR/121R/122R/123R IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R, IRFD123R 1RFD123 IRFD 123R fd120 IRFD 120 IRFD 123
irfd2z0 Abstract: 0n 4409 diode 4408 Text: h a r r is IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N -Channel Enhancem ent-M ode Power Field-Effect Transistors A ug ust 1 9 9 1 Package Features 4 - P IN D IP T O P V IEW • 0.30A and 0.32A, 150V - 200V • rDS on = 5.0H and 6.5H • S O A is Pow er-Dissipation Limited	OCR Scan	PDF	92CS-43539 irfd2z0 0n 4409 diode 4408
transistors BC 557C Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555 Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and	OCR Scan	PDF
irfd9123 Abstract: tc 9123 IRFD 123 Text: m IR F D 9 1 2 0 IR F D 9 1 2 3 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E TOP VIEW • -1.0 A and -0.8A , -8 0 V and -100V • rDS ON = 0-6H and 0 .8 ri • Single Pulse Avalanche Energy Rated	OCR Scan	PDF	-100V IRFD9120 IRFD9123 tc 9123 IRFD 123
FD213 Abstract: No abstract text available Text: 3 ] H A R R I S ÎR F D 2 1 0 /2 1 1 /2 1 2 /2 1 3 IR F D 2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP TOP VIEW • 0.6A and 0.45A, 150V - 200V • rDS on = 1-5 fl and 2-4 n	OCR Scan	PDF	1RFD213 FD213
mfe9200 Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120 Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0	OCR Scan	PDF	1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120

658512ALFP Abstract: 658512 000nS Text: HM658512AI Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-286C(Z) Rev. 3.0 March 15, 1999 Description The Hitachi HM658512AI is a 4-Mbit pseudo static RAM organized 524288-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process	OCR Scan	PDF	HM658512AI 512-kword ADE-203-286C 524288-word 32-pin ns/100 ns/120 ns/160 658512ALFP 658512 000nS
IRFD221 Abstract: 3203 MOSFET Text: MOTOROLA SC ÍXSTRS/R F} Tfl 6367254, M O T O R O L A SC XSTRS/R F öF\|fc,3t7aSL( 0003202 ; . 980 63282 D IRFD220-223 T ' 3 5 ~S lS ELECTRICAL CHARACTERISTICS — C o n tin u e d (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Typ Max U nit	OCR Scan	PDF	IRFD220-223 IRFD220, IRFD221 IRFF110 IRFF113 IRFF113 3203 MOSFET
1rfd9210 Abstract: 387H IRFD9210 Rg2-55 Text: PD-9.387H International 11«1Rectifier IRFD9210 HEXFET Power M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channe! Fast Switching Ease of Paralleling V d s s _ -2 0 0 V R DS on =	OCR Scan	PDF	IRFD9210 1rfd9210 387H Rg2-55
Untitled Abstract: No abstract text available Text: 4 3 0 5 57 1 0 0 S 4 1 1 5 17T • H a r r is HAS IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N-Channel Enhancement-Mode Power Field-Effect Transistors A ug ust 1 9 9 1 Features Package 4 -P IN DIP TOP VIEW • 0.30A and 0.32A, 150V - 200V • rD S on — 5 .O il and 6 .5 0	OCR Scan	PDF	92CS-4Ã
Z80 Assembly Language Programming Manual Abstract: Z8S18016 Z8018006 z80180 Text: < £ 2 iL 0 E P r o d u c t S pe c if ic a t io n Z80180/Z8S180* Z 180 MICROPROCESSOR * Z 8 S 1 8 0 -PRELIMINARY FEATURES • Z80180 Supports Operating Frequency to 10 MHz On-Chip Clock Oscillator/Generator ■ Z8S180 Supports Operating Frequency to 20 MHz	OCR Scan	PDF	Z80180/Z8S180* Z80180 Z8S180 16-Bit Z80180) Z80 Assembly Language Programming Manual Z8S18016 Z8018006
C294 Abstract: 1RFD024 Text: PD - 9.699A International IGR Rectifier IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 60V	OCR Scan	PDF	IRFD024 C-293 C-294 C294 1RFD024
1RFD110 Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111 Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*	OCR Scan	PDF	IRFD110/111/112/113 IRFD110R/111R/112R/113R IRFD110, IRFD111, IRFD112, IRFD113 IRFD110R, IRFD111R, IRFD112R, IRFD113R 1RFD110 FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
IRF 544 N MOSFET Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511 Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: HM658512AI Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-286C(Z) Rev. 3.0 March 15, 1999 Description The Hitachi HM658512AI is a 4-Mbit pseudo static RAM organized 524288-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process	OCR Scan	PDF	HM658512AI 512-kword ADE-203-286C 524288-word 32-pin ns/100 ns/120 ns/160
IRFD9213 Abstract: No abstract text available Text: H E I 4055452 0000422 T-37-25 7 \| Data Sheet No. PD-9.387F INTERNATIONAL R E C T I F I E R I N T E R N A T I O N A L R E C T I F I E R IO R HEXFET* TRANSISTORS IRFD9210 P-CHANNEL HEXDIP IRFDS21 3 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE	OCR Scan	PDF	5s452 T-37-25 IRFD9210 advanT-37-25 C-176 IRFD9213

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1RFD Price and Stock

TE Connectivity H891RFDA

TE Connectivity H811RFDA

TE Connectivity H851RFDA

TE Connectivity H8681RFDA

TE Connectivity H4P221RFDA

1RFD Datasheets Context Search

IRFD210

F111

k 3525 MOSFET

F111

Power MOSFET in a HEXDIP package

Untitled

Untitled

1RFD210

1RFD123

irfd2z0

transistors BC 557C

irfd9123

FD213

mfe9200

658512ALFP

IRFD221

1rfd9210

Untitled

Z80 Assembly Language Programming Manual

C294

1RFD110

IRF 544 N MOSFET

Untitled

IRFD9213