IEC 61000-4-4
Abstract: 1SMB5913BT3 HSMBJ5913B smaj5.0 diodes SMBJ5913B TVS SMBJ 1PMT4099 1PMT4614 1PMT5920BT3 CDLL3016B
Text: Microsemi Black text = Direct cross VOLTAGE REGULATORS Green text = Great match, very slight variation see comments voltage tolerance is 5% unless stated otherwise Device/Series S Package Vz Range (V) Red text = indirect match (similar part - may require
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1PMT5920BT3
1PMT4614
1PMT4099
IEC 61000-4-4
1SMB5913BT3
HSMBJ5913B
smaj5.0 diodes
SMBJ5913B
TVS SMBJ
1PMT4099
1PMT4614
1PMT5920BT3
CDLL3016B
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Untitled
Abstract: No abstract text available
Text: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options
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OT223/SOT89
2N7002*
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Untitled
Abstract: No abstract text available
Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR PART NUMBERING GUIDE SOT SERIES FEATURES SOT A AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS LOW JITTER TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V 3 48 - 25.000MHz TR
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20ppm
000MHz
100ppm
50ppm
25ppm
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR RoHS COMPLIANT PART NUMBERING GUIDE SOT SERIES FEATURES SOT B 3 48 – 77.760MHz TR AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V
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760MHz
20ppm
100ppm
50ppm
25ppm
MIL-STD-883D
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Untitled
Abstract: No abstract text available
Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR PART NUMBERING GUIDE SOT SERIES FEATURES SOT A AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS LOW JITTER TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V 3 48 - 25.000MHz TR
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20ppm
000MHz
100ppm
50ppm
25ppm
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR RoHS COMPLIANT PART NUMBERING GUIDE SOT SERIES FEATURES SOT A AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS LOW JITTER TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V
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20ppm
000MHz
100ppm
50ppm
25ppm
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR RoHS COMPLIANT PART NUMBERING GUIDE SOT SERIES FEATURES SOT B 3 48 – 77.760MHz TR AVAILABLE TO ±25ppm MINIATURE PACKAGE LVDS TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLAINT 3.3±0.165V
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760MHz
25ppm
100ppm
50ppm
880MH4
MIL-STD-883D
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Untitled
Abstract: No abstract text available
Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR RoHS COMPLIANT PART NUMBERING GUIDE SOT SERIES FEATURES SOT B 3 48 – 77.760MHz TR AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V
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760MHz
20ppm
100ppm
50ppm
25ppm
MIL-STD-883D
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EFT 323
Abstract: FOOTPRINT MELF TVS diode MELF BZV55 SOD-123 BZV55 Series IEC 1000-4-2 ESD vishay melf 2 melf melf footprint smaj5.0 diodes
Text: Vishay Black text = Direct cross VOLTAGE REGULATORS Green text = Great match, very slight variation see comments voltage tolerance is 5% unless stated otherwise Red text = indirect match similar part - may require testing to verify specs , will work for most
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BZV55
BZV55-B,
5/50ns)
GSOT03
8x20us)
GL05T
SL05T1
EFT 323
FOOTPRINT MELF
TVS diode MELF
BZV55 SOD-123
BZV55 Series
IEC 1000-4-2 ESD
vishay melf
2 melf
melf footprint
smaj5.0 diodes
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1ps sot
Abstract: bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363
Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
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847PN
OT-363
Q62702-C2374
May-12-1998
1ps sot
bc 104 npn transistor
BC847PN1Ps
Q62702-C2374
"two TRANSISTORs" sot-363 pnp npn
4E SOT-363
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bc 104 npn transistor
Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
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847PN
Q62702-C2374
OT-363
Jan-20-1997
bc 104 npn transistor
npntransistor
Q62702-C2374
4E SOT-363
TRANSISTOR BC 90
847PN
1Ps MARKING CODE
TRANSISTOR BC 650 c
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BC847PN SOT363
Abstract: VPS05604 BC847PN Marking 1ps sot
Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation
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BC847PN
VPS05604
OT-363
EHA07193
EHA07177
OT363
EHP00365
EHP00364
EHP00368
BC847PN SOT363
VPS05604
BC847PN
Marking 1ps sot
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BC847PN SOT363
Abstract: H12E BC847PN VPS05604
Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation
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BC847PN
VPS05604
OT-363
EHA07193
EHA07177
OT363
EHP00365
EHP00364
EHP00368
BC847PN SOT363
H12E
BC847PN
VPS05604
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Marking 1ps sot
Abstract: VPS05604
Text: BC 847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation
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847PN
VPS05604
OT-363
EHA07193
EHA07177
OT-363
EHP00365
EHP00364
EHP00368
Marking 1ps sot
VPS05604
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Marking 1ps sot
Abstract: marking 1ps 1Ps MARKING CODE marking 297 sot-23 sot-23 marking 297 sot-23 297 LF MARKING CODE SOT 23 1ps sot
Text: Central" CMPD2005S Semiconductor Corp. DUAL, IN SERIES HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for
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CMPD2005S
OT-23
100pA
100mA
200mA
31-October
OT-23
Marking 1ps sot
marking 1ps
1Ps MARKING CODE
marking 297 sot-23
sot-23 marking 297
sot-23 297
LF MARKING CODE SOT 23
1ps sot
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BAV170
Abstract: JXs sot
Text: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170
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BAV170
Q62702-A920
BAV170
100ns
JXs sot
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Marking 1ps sot
Abstract: No abstract text available
Text: Central CMFD2004Ì Semiconductor Corp. DUAL ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFD2004i consists of two electrically Isolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is
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CMFD2004Ì
CMFD2004i
OT-143
CPD80
OT-143
Marking 1ps sot
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tic 223
Abstract: A912 hs sot223 A9-13 1ps sot UM 78A
Text: B A S 78A. B A S 78D Silicon Switching Diodes • Switching applications • High breakdow n voltage T ype M a rkin g O rd e rin g c o d e 1 2 -m m ta p e Package* BAS78A BAS78A Q62702 - A910 SOT-223 BAS78B BAS78B Q62702 - A 9 1 1 SOT-223 BAS78C BAS78C
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BAS78A
BAS78B
BAS78C
BAS78D
Q62702
tic 223
A912
hs sot223
A9-13
1ps sot
UM 78A
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BAW156
Abstract: No abstract text available
Text: Silicon Low Leakage Diode Array BAW156 • Low Le a k a g e applications • M edium sp e e d switching times • C o m m o n anode A Type M a rk in g O rd e rin g c o d e 8 -m m ta p e Package B A W 1 56 JZs Q62702-A922 SOT 23 M a x im u m R a tin g s D e s c rip tio n
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BAW156
Q62702-A922
BAW156
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785nm mitsubishi
Abstract: No abstract text available
Text: MITSUBISHI LA S E R DIODES PRELIMINARY Nclics;:Ti-HSisrvotalinsi spécification cvyo |V| fcwO S o ;n e tfafam etnc; ¿fw ts a re su b iö u t tu tíia rra e : TYPE NAME 7f c c d ic c *1 I _ FOR OPTICAL INFORMATION SYSTEMS ML60127R, ML601J27 DESCRIPTION FEATURES
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ML60127R,
ML601J27
L6XX27
785nm
Po-50m
RL-10
ML60127R
ML6XX27
785nm mitsubishi
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3BQ Silicon Low Leakage Diode Array 001bS43 b « S IP T-Ol-OI BAV170 SIEMENS/ SPCLi SEMICON DS _ • Low Leakage applications • Medium speed switching times • Common cathode Type Marking Ordering code 8-mm tape Package BAV170
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023b3BQ
001bS43
BAV170
Q62702-A920
T-01-09
23b32Ã
001b54b
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T0311
Abstract: No abstract text available
Text: 35E D m ÔS3b3B0 QOlbSlT 1 « S I P Silicon Switching Diodes X~ BAS 79A. BAS 79b _ SIEMENS/ SPCL-, SEMICONDS _ • Switching applications • High breakdown voltage • Com m on cathode T yp e M arking O rde ring c o d e 12-tnm tape
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12-tnm
Q62702
OT-223
BAS79B
BAS79D
T0311
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Untitled
Abstract: No abstract text available
Text: SIEMENS CMPNTSi OPTO 44E » S I E M E N S • ôS3b32b G O G M ^ D S « S I E X * r - 4 i- « 3 4 N 2 5 /4 N 2 6 4 N 2 7 /4 N 2 8 PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in inches mm AN 00 E LO) I ISS Hi m♦ ft ft fl (+) (T » ]mse 7 ] COLLECTOR
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S3b32b
823h35b
4N25/4N26
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Single-chip 8-bit microcontroller 80C552/83C552 Single-chip 8-bit microcontroller with 10-bit A/D, capture/compare timer, high-speed outputs, PWM FEATURES • 80C51 central processing unit • l2C*bus serial I/O port with byte oriented
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80C552/83C552
10-bit
80C51
80C51
16-bit
16MHz
8XC552)
Single-ChiCB83C552-5H/xxx
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