DIODE 1N5822
Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
DIODE 1N5822
1N5820RL
1N5821
1N5821RL
1N5822RL
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1N5821
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
Surfa5820
1N5821
1N5821
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PDF
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half bridge LLC inverter
Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
half bridge LLC inverter
diode 1n5822g
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
1N5821RL
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PDF
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1N5822RL
Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
1N5822RL
1N5820RL
1N5821
1N5821RL
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
SurfaN5820
1N5821
1N5821
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PDF
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1N5822
Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
DIODE 1N5822
FULL WAVE RECTIFIER CIRCUITS
1N5820-D
1N5822 data sheet
1N5822 PACKAGE
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
sine wave inverter circuit diagram
1N5820RL
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PDF
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5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
FULL WAVE RECTIFIER CIRCUITS
half bridge LLC inverter
"Power Diode"
10 Ampere Schottky bridge
rectifier diode assembly
THERMAL RUNAWAY IN RECTIFIER
DIODE T28
3 diodes 3 phase half-wave rectifier
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PDF
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1N5822 PACKAGE
Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5822 PACKAGE
1N5821
half wave rectifier LLC
1N5820G
1N5820RL
1N5820RLG
1N5821G
1N5821RL
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1N5820
Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
DIODE T28
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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PDF
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1N5820-1N5822
Abstract: 1N5822 data sheet 1N5400 1N5820 1N5821 1N5822 CBVK741B019 F63TNR semiconductor band color code
Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers
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1N5820-1N5822
1N5820
1N5822
DO-201AD
1N5820-1N5822
1N5822 data sheet
1N5400
1N5821
1N5822
CBVK741B019
F63TNR
semiconductor band color code
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PDF
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1N5820
Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820RL
1N5821
1N5821RL
1N5822RL
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PDF
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1N5822
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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PDF
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1N5822
Abstract: T4-LDS-0303 mil-prf-19500/1N5822 MELF
Text: 1N5820 – 1N5822 and 1N6864 Available on commercial versions 3 Amp Axial Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This series of 3 amp Schottky rectifiers in their axial-leaded “B” packaging offer flexible thruhole mounting. The 1N5822 and 1N6864 are military qualified for high-reliability applications.
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1N5820
1N5822
1N6864
MIL-PRF-19500/620
1N6864
MIL-PRF-19500/620
T4-LDS-0303
mil-prf-19500/1N5822 MELF
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1n5822 BL
Abstract: 1N5820 1N5821 1N5822
Text: BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER 1N5820- 1N5822 VOLTAGE RANGE: 20 - 40 V CURRENT: 3.0 A FEATURES Metal-Semiconductor junction with guard ring DO - 27 Epitaxial construction Low forward voltage drop,low switching losses High surge capability
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1N5820---
1N5822
DO--27
STD-202
otherwi150
50mVp-p
1n5822 BL
1N5820
1N5821
1N5822
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PDF
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1N5821
Abstract: 1N5820 1N5822
Text: 1N5820 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5822 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capabitity
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1N5820
1N5822
DO-201AD
MIL-STD-202E
300uS
1N5821
1N5821
1N5820
1N5822
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PDF
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1N5820
Abstract: 1N5821 1N5822
Text: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Ampere FEATURES DO-201AD Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction
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1N5820
1N5822
DO-201AD
1N5821
1N5822
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5822 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capabitity
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1N5820
1N5822
DO-201AD
MIL-STD-202E
1N5822
1N5820
1N5821
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PDF
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1N5820
Abstract: 1N5821 1N5822
Text: CE 1N5820 THRU 1N5822 CHENYI ELECTRONICS SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0Ampere FEATURES . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 . Metal sliicon junction ,majority carriet conduction
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1N5820
1N5822
DO-201AD
1N5821
1N5822
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PDF
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DIODE 1N5822
Abstract: 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E
Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5820
1N5822
DO-201AD
DO-201AD,
MIL-STD-202,
DIODE 1N5822
1N5821-T3
1N5820
1N5820-T3
1N5820-TB
1N5821
1N5821-TB
1N5822
RS-296-E
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PDF
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1N5822 data sheet
Abstract: 1N5820 1N5821 1N5822
Text: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop
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1N5820
1N5822
DO-201AD
DO-201AD
UL94V-O
MIL-STD-202,
1N5821
1N5820
1N5822 data sheet
1N5821
1N5822
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PDF
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1N5820
Abstract: 1N5821 1N5822
Text: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES 1.0 25.4 MIN. * Compliance to RoHS product * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
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1N5820
1N5822
DO-201AD
260oC
1N5820
1N5821
1N5821
1N5822
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PDF
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L75C
Abstract: No abstract text available
Text: 1N5820THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3 . 0 Amperes _ FEATURES_ ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction
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OCR Scan
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1N5820THRU
1N5822
DP-201
90i4B
L75C
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PDF
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1N5321
Abstract: 1N5B22
Text: 1N5820 THRU SEM ICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD. 1N5822 TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 40 Volts CURRENT - 3.0 Amperes FEATURES switching noise Low forward voltage drop High current capability
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OCR Scan
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1N5820
1N5822
DO-27
5820TH
1N5321
1N5B22
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PDF
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