Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N5059-1N5062 STANDARD AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Parameter Test condition Sub type Symbol Value 1N5059 1N5060 Reverse voltage = repetitive peak reverse voltage 1N5061 400 VR = VRRM Average forward current 800 tp = 10ms, half sinewave
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1N5059-1N5062
1N5059
1N5060
1N5061
1N5062
OD-57,
OD-57
MIL-PRF-19500,
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EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
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PBYR3045WT
BYD73D
CTB34M
BYD73G
SB1035
PBYR1040
1N5059
SB1040
EQUIVALENT BYD33D
1n5062 equivalent
SUF5402
diode cross reference BYS21-45
BYS21-45
1N4007 general instruments
BY255 itt
da3/1000
1N6644
FR207 equivalent
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BT136-600E equivalent
Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.
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10TQ045S
11DQ03
11DQ04
11EQ03
11EQ04
11EQS
15DF4
1N3645
BT136-600E equivalent
D2499 equivalent
D1878 equivalent
BT139-600 equivalent
C4927
d1577
d1554
C5386
c5129
e13005 equivalent
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1N5059
Abstract: 1N5062 1N506 diode 1n5059 1n5062 equivalent 1N5062 diode MBG044 1N5060 1N5061
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 20 Philips Semiconductors Product specification
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M3D116
1N5059
1N5062
1N5062
1N506
diode 1n5059
1n5062 equivalent
1N5062 diode
MBG044
1N5060
1N5061
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BUT11APX equivalent
Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BUT11APX equivalent
BU4508DX equivalent
2SD1876
2Sd1651 equivalent
BYS21-45
smd zener diode color band
2SD1878 data sheet
2SC5296 equivalent
BT151-600R
BUK98150 spice
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1N5062
Abstract: 1N5059 1N5060 1N5061 MBG044
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 Jun 19 Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062
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M3D116
1N5059
1N5062
1N5062
1N5060
1N5061
MBG044
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diode 1n5059
Abstract: 1N5062 1N5061 1n5059 MBG044 1N5062 diode 1N5060 1N5059 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19 Philips Semiconductors Product specification
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M3D116
1N5059
1N5062
diode 1n5059
1N5062
1N5061
MBG044
1N5062 diode
1N5060
1N5059 diode
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BU4508DX equivalent
Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BU4508DX equivalent
BUT11APX equivalent
S0806MH
P0201MA TO92
BT136 application note
diode cross reference BYW96E
ct 2A05 diode
BU2508Dx equivalent
ST2001HI equivalent
BU2508DF equivalent
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EC35-3c8
Abstract: EC35 TRANSFORMER uc38428 uc3842 flyback constant current HIGH FREQUENCY Transformer ec35 uc3842 application note UC3842 boost converter flyback transformer design uc3842 flyback uc3842 power supply flyback uc3842 sync
Text: INTEGRATED CIRCUITS AN1272 UC3842 application note Author: Lester J. Hadley, Jr. 1991 Dec Rev 1: 1996 Apr Philips Semiconductors Philips Semiconductors Application note UC3842 application note AN1272 Author: Les Hadley terminal and the inverting input, Pin 2. Resistor values in the
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AN1272
UC3842
100pF
SL01097
PBYR735
EC35-3c8
EC35 TRANSFORMER
uc38428
uc3842 flyback constant current
HIGH FREQUENCY Transformer ec35
uc3842 application note
UC3842 boost converter
flyback transformer design uc3842
flyback uc3842 power supply
flyback uc3842 sync
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BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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1N5059
Abstract: 1N5062 1N5060 1N5061
Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER FEATURES Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand
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1N5059---1N5062
DO-15,
39gram
1N5059
1N5062
1N5060
1N5061
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isfet ph SENSOR
Abstract: ISFET OIB40S01
Text: CCCCCCCCCCCCCCCCCC D ISFET SENSOR for pH measurement EEEEEEEEEEEEEEEECFCA93298C C The OII1 sensor consists of one silicon ISFET chip for pH measurement. The sensor makes use of the potentiometric measurement method. The potential difference developed in solution
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12234556667832897A8B5C
isfet ph SENSOR
ISFET
OIB40S01
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1N5061
Abstract: No abstract text available
Text: 1N5059-1N5062 Plastic Silicon Rectifier VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A DO - 15 Features Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand and s im ilar s olvents
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1N5059-1N5062
DO-15
1N5059
1N5061
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LN5061
Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
Text: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT
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1N5059
1N5060
400Mm.
LN5061
A14P Rectifier
1N5059 A14B
A14B
A14P
diode A14B
LN5060
ln5062
1N5059
1N5060
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in5062
Abstract: A14P
Text: 74 729 4 62 1 POWEREX INC T - °t ~i 3 tEJ7amtai naoiasi Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 1N5062 AMP THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO
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1N5059
1N5060ion
in5062
A14P
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1N5061
Abstract: A14P A14B IN5059 1N5059 1N5060 1N5062 A14D A14M A14N
Text: 7294621 POWEREX INC 74 I ieT J 7 5 1 4 1 ,2 1 T- °i~i3 DÜÜ1351 Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO
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DDOiaa11]
270Mm
1N5061
A14P
A14B
IN5059
1N5059
1N5060
1N5062
A14D
A14M
A14N
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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DIODES BYD
Abstract: BYD13M BYG50J diodes byw sod91
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers GENERAL-PURPO SE AVALANCHE RECTIFIERS OVERVIEW leaded surface-mount VR SO D 91 SO D 81 SO D 5 7 SO D 57 SO D 6 4 SO D 8 7 S O D 106
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BYD11D
BYD11J
BYD11M
BYD13J
BYD13M
1N5059
1N5060
1N5061
1N5062
BYD17J
DIODES BYD
BYG50J
diodes byw
sod91
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amper 1N5061
Abstract: LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B
Text: FAS T R E C O V E R Y R EC TIFIER S S E LE C T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R EC TIFIER S S E LE C T O R GUIDE
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400Mm.
amper 1N5061
LN5061
A14P Rectifier
A14B
diode A14A surface mount
A14P
Amper 1N5060
1n5062
diode A14A surface
diode A14B
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diode A14A
Abstract: diode A14A surface mount LN5061 A14P Rectifier A14P A14B LN5060 A14F DT230 A14D 1n5060
Text: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS
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1N5059-62
1N4245-49
1N5624-27
DT230
A14A-P
GER4001-7
A114A-M
A15A-N
A115A-M
DT23CF
diode A14A
diode A14A surface mount
LN5061
A14P Rectifier
A14P
A14B
LN5060
A14F
A14D 1n5060
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A114F
Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
Text: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —
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1N5059
1N4245-49
1N5624-27
DT230
MPR10-15
A14A-P
GER4001
M14A-M
DT230F
A114F
A114A
A114N
A114F GE
A114B
MPR12
MPR15
GER4007
DT230B
ge a114d
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BYX38-300R
Abstract: 1N4007ID BYD13M LL4002 bym56e
Text: Power Devices G e n e ra l P u rp o s e R e c tifie rs in order of current rating Average Forward Current Repetitive Peak Reverse Voltage V 'RRM max. Surge (NonRepetitive) Forward Current Voltage Drop Controlled Avalanche Characteristics Package Outline
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1N4001ID
1N4002ID
1N4003ID
1N4004ID
1N4005ID
1N4006ID
1N4007ID
BYD13M
PRLL4001
LL4002
BYX38-300R
bym56e
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