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    1N4607 Price and Stock

    Microchip Technology Inc 1N4607

    DIODE GEN PURP 85V 200MA DO35
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    Microchip Technology Inc 1N4607-TR

    DIODE GP REV 85V 200MA DO35
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    Microchip Technology Inc 1N4607/TR

    Signal Or Computer Diode Do-35 Rohs Compliant: Yes |Microchip 1N4607/TR
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    RM 1N4607

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    Bristol Electronics 1N4607 1,200 9
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    1N4607 537
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    Microsemi Corporation 1N4607

    RECTIFIER DIODE,85V V(RRM),DO-35
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    Quest Components 1N4607 10,000
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    1N4607 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N4607 Microsemi Silicon Switching Diode Original PDF
    1N4607 APD Semiconductor Planar Diodes Scan PDF
    1N4607 APD Semiconductor Planar Diodes, DO-35 Case Scan PDF
    1N4607 BKC International Silicon Diodes Scan PDF
    1N4607 General Diode Silicon Switching Diode Scan PDF
    1N4607 General Electric Semiconductor Data Book 1971 Scan PDF
    1N4607 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N4607 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4607 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4607 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N4607 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N4607 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N4607 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4607 Panasonic Silicon epitaxial planar type diode. Scan PDF
    1N4607 Texas Instruments Discrete Devices 1978 Scan PDF
    1N4607 Unitrode International Semiconductor Data Book 1981 Scan PDF

    1N4607 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4607

    Abstract: TL50 1N4150 1N4608 DO-213AA LL4607 LL4608 diode with PIV 200
    Text: Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m


    Original     		PDF DO-35 1N4607 1N4150 -55oC 031-A 1N4607 TL50 1N4150 1N4608 DO-213AA LL4607 LL4608 diode with PIV 200

    IRS 740

    Abstract: No abstract text available
    Text: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 1N4451 1N4607.8 absolute maximum ratings: (25°C)* 1N443I 1N4M7 •1N4WJ 30 70 70 Voltoff* Reverse Volts Ciirrmt Average Rectified Recurrent Peak Forward


    Original     		PDF 1N4451 1N4607 1N443I IN4607 IRS 740

    BKC diode do35

    Abstract: No abstract text available
    Text: Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m


    Original     		PDF 1N4607 1N4150 DO-35 -55oC 031-A BKC diode do35

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    ALL4150

    Abstract: 1N4606
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


    Original     		PDF 00000S3 DO-35 ALL4152 ALL4153 ALL4450 ALL4451 ALL4453 ALL4454 500mW ALL4150 1N4606

    1N4607

    Abstract: SC-40 TOSHIBA 1N4607
    Text: TOSHIBA {DISCRET E/ OPT O} b? 9097250 TOSHIBA DISCRETE/OPTO 1N4607 - DDDTSTS □ "J , D rr.o'lS-*? 67C 09295 Silicon Epitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.


    OCR Scan     		PDF 1N4607 SC-40 100mA 250mA 350ma 400mA 500mA, 1N4607 SC-40 TOSHIBA 1N4607

    D035

    Abstract: DT230A D0-35 D035 package 1N4830 1N4150 1N4450 1N4606 1N4607 1N460B
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Part Number BV @ 1OOü A Min. V 1N4451 40 1N4607 85 Ir @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		PDF 100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H D035 DT230A D0-35 D035 package 1N4830 1N4150

    diode A14A

    Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		PDF 100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H diode A14A A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150

    1N4607

    Abstract: 1N4452 1N4608
    Text: niCROSEMI CORP/ Ü1ATERTOÜIN SDE D • ^ 3 4 7 ^ 3 GGlHBbT 4SÛ ■ U N I T 1N4452-1N4607' 1N4608 COMPUTER DIODE Higlr Conductance T -^ 3 -o ^ FEATU RES • M etallu rgical Bond • Planar Passivated • High C o n ductance • DO-35 Package DESCRIPTION T h is series offers M etallurgical Bonding


    OCR Scan     		PDF DO-35 1N4452, 1N4607 1N4608 1N4452 1N4608 600mA 1000mA 1N4452

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diode 1N4607 Applications IDO-35 Glass Package 1 Used in general purpose applications,w here a controlled forward characteristic and fast switching speed are important. Features • • • Six sigm a quality M etallurgical^ bonded BKC's Sigm a Bond plating


    OCR Scan     		PDF 1N4607 IDO-35

    D035

    Abstract: Bv 42 transistor STB567 D035 package 1N4150 1N4450 1N4606 1N4607 1N460B DT230C
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 Ir Vf @ 25°C Max. 1 <nA) Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package T»pe Package Outline No.


    OCR Scan     		PDF 100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H D035 Bv 42 transistor STB567 D035 package 1N4150

    1N4607

    Abstract: 100-C 1N4452
    Text: COMPUTER DIODE 1N4452, 1N4607 High Conductance FEATU RES D E S C R IP T IO N • • • • This series offers Metallurgical Bonding and is specifically designed for high conductance sw itching applications such as core memories. Metallurgical Bond Planar Passivated


    OCR Scan     		PDF 1N4452, 1N4607 DO-35 1N4452 400mAdc. DO-35 1N4607 100-C

    1N4150

    Abstract: 1N4450 1N4606 1N4607 1N460B D035 DT230C DT230H JS-2-65-11
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		PDF 100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H 1N4150 D035 JS-2-65-11

    TOSHIBA 1N4607

    Abstract: IP100A 18A1a
    Text: TOSHIBA {DIS CR ET E/OPT O} 9097250 TOSHIBA b? D I S C R E T E /OPTO 1N4607 - DDOTETS Q "J 6 7C 09295 , D ,r=- . o ' } - * ? Silicon E pitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.


    OCR Scan     		PDF 1N4607 DO-35 SC-40 100mA 250mA 350mA 400mA 500mA, TOSHIBA 1N4607 IP100A 18A1a

    TRANSISTOR 2n3901

    Abstract: MPD300 mpd200 1N4156 2N2368 2N3973 1N4150 1N4450 1N4606 1N460B
    Text: SIGNAL DIODES 100 - 200 MA TYPES 200 - 400 MA TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		PDF 100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H TRANSISTOR 2n3901 MPD300 mpd200 1N4156 2N2368 2N3973 1N4150

    in4606

    Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		PDF 100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H in4606 IN4150 1N4150 D035

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    SS321

    Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package


    OCR Scan     		PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 D07 15 SS322 SS337 DT230A HPIXP2350ADT

    1N4447-A

    Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
    Text: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536


    OCR Scan     		PDF 1N4446 500mW 1N4447 1N4447 1N4448 1N4448 1S801 1N4447-A 1N4532 1S953 1N4448-A is805 1N4449 1N4454

    FD100

    Abstract: 1N408 FD600 N4376 1N4148 JANTX 1n4376 equivalent 1N5317 1N916B 1N4086 1n916 equivalent
    Text: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE *RR Bv C Package If pF Equivalent mA MAX Package .75 0.8 DO-7 DO-7 VF ns VOLTS nA •r @ TYPE M AX MIN MAX @ FD700 0.70 30 50 @ 15 1N4244 0.75 20 100 @ 1 N4376 0.75 20 100 1N4376 JAN 0.75 20 FD777


    OCR Scan     		PDF DO-7/DO-35 FD700 1N4244 N4376 51N4152 1N4533 1N3600 1N914 1N914A 1N914B FD100 1N408 FD600 N4376 1N4148 JANTX 1n4376 equivalent 1N5317 1N916B 1N4086 1n916 equivalent

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor

    AMERICAN POWER DEVICES 1n914

    Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
    Text: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V


    OCR Scan     		PDF DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619 1N890 1N914 AMERICAN POWER DEVICES 1n914 1N5209 1N3064

    A114D

    Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
    Text: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)


    OCR Scan     		PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 A114D A114F DT230B DT230F STB-568 GER4007 a114n