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    1N4001 SILICON Search Results

    1N4001 SILICON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    5962-8757701RA Renesas Electronics Corporation Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon Visit Renesas Electronics Corporation
    HXT45430-DNU Renesas Electronics Corporation 112Gb/s PAM4 Silicon Photonic Modulator Driver Visit Renesas Electronics Corporation

    1N4001 SILICON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1n4001

    Abstract: 1n4001 trr
    Text: 1N4001 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4001 Availability Online Store


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    PDF 1N4001 1N4001 STV3208 LM3909N 1n4001 trr

    Dioden

    Abstract: 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


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    PDF 1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 Dioden 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL

    EM513

    Abstract: EM518
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-21 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -4.5 Ø 2.6 Ø 0.77±0.07


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    PDF 1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 EM513 EM518

    em516

    Abstract: No abstract text available
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-30 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


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    PDF 1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 em516

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS 1N4001-1N4007 1.0 SILICON RECTIFIER Green Products Technical Data Data Sheet N0543, Rev. - Marking Diagram: Where XXXXX is YYWWL 1N4001 SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0


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    PDF 1N4001-1N4007 N0543, 1N4001 DO-41 5000pcs

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-17 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


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    PDF 1N4001 1N4007, 1N4007-13, EM513, EM516, EM518

    CHARACTERISTICS DIODE 1N4007

    Abstract: diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004
    Text: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


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    PDF 1N4001 1N4007 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. CHARACTERISTICS DIODE 1N4007 diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)


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    PDF 1N4001 1N4007 DO-41 DO-41 MIL-STD-202

    diode 1N4001 specifications

    Abstract: CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001
    Text: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


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    PDF 1N4001 1N4007 1000hrs. MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 diode 1N4001 specifications CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001

    silicon diode 1N4001 specifications

    Abstract: 1N4001 rectifier diode 1N4001 specifications
    Text: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


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    PDF 1N4001 1N4007 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1051 silicon diode 1N4001 specifications 1N4001 rectifier diode 1N4001 specifications

    diode cross reference 1N4007

    Abstract: diode cross reference 1N4002
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List. 1 Package outline. 2


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    PDF 1N4001 1N4007 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. diode cross reference 1N4007 diode cross reference 1N4002

    DO-41

    Abstract: diode 1N4001 specifications 1n4001
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List. 1 Package outline. 2


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    PDF 1N4001 1N4007 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. DO-41 diode 1N4001 specifications

    diode 1N4001 specifications

    Abstract: 1n4001 1N4001 general diodes parameter 1N4001 function of 1n4007 1N4001 silicon GENERAL PURPOSE 1N4007 DIODES 1N4007 datasheet d 1n4007 equivalent components of diode 1n4001
    Text: General Purpose Rectifiers Standard Recovery Plastic Silicon Rectifiers AXIAL LEAD DO-41 Specification Features: Case: Epoxy, Molded Weight: 0.4 gram approximately Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are 1N4001 KEL DEVICE MARKING DIAGRAM


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    PDF DO-41 1N4001 1N4001 1N4007 diode 1N4001 specifications 1N4001 general diodes parameter 1N4001 function of 1n4007 1N4001 silicon GENERAL PURPOSE 1N4007 DIODES 1N4007 datasheet d 1n4007 equivalent components of diode 1n4001

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 THRU RECTIFIER SPECIALISTS R 1N4007 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * *


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    PDF 1N4001 1N4007 DO-41 MIL-STD-202E, 1N4004 1N4005 1N4001 1N4007)

    1N4001

    Abstract: 1N4007
    Text: HITANO ENTERPRISE CORP. 1N4001 THRU 1N4007 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * *


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    PDF 1N4001 1N4007 DO-41 MIL-STD-202E, 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007

    1N4007

    Abstract: 1N4001
    Text: 1N4001 THRU 1N4007 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES DO-41 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique


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    PDF 1N4001 1N4007 DO-41 DO-41 MIL-STD-7525 1N4007

    1N4001

    Abstract: 1N4007
    Text: 1N4001 THRU 1N4007 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES DO-41 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique


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    PDF 1N4001 1N4007 DO-41 DO-41 MIL-STD-750, 1N4007

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere PLASTIC SILICON RECTIFIERS DO- 41 FEATURES ●Low cost ●Diffused junction ●Low forward voltage drop ●Low reverse leakage current 1.0 25.4 MIN. ●High current capability


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    PDF 1N4001 1N4007 DO-41 300us 03-Aug-2012

    1N4001

    Abstract: 1N4002 1N4003 1N4004 1N4005 1N4007 RECTRON 1n4004
    Text: 1N4001 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4007 SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * * * * * Case: Molded plastic


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    PDF 1N4001 1N4007 DO-41 MIL-STD-202E 300uS 1N4001 1N4002 1N4003 1N4004 1N4005 1N4007 RECTRON 1n4004

    1N4001

    Abstract: 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
    Text: 1N4001 THRU 1N4007 PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Low forward voltage • High current capability


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    PDF 1N4001 1N4007 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007

    1N4001

    Abstract: 1N4002 1N4003 1N4004 1N4005 1N4007 free 1N4007 ir 9840
    Text: 1 AMP SILICON RECTIFIERS 1N4001 THRU 1N4007 TECHNICAL SPECIFICATION VOLTAGE FEATURES 50 to 1000 Volts Low cost construction utilising void - free moulded plastic technique Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Diffused junction


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    PDF 1N4001 1N4007 375in. DO-41 50mVp-p 1N4002 1N4003 1N4004 1N4005 1N4007 free 1N4007 ir 9840

    1n4007

    Abstract: diode 1N4005 specifications 1N4001 1n4006 diode 1N4006 specifications 1N4002,1N4003,1N4004,1N4005,1N4006,1N4007 1N4004 1N4007 MINIMELF DO214 1N4004 1N4007 NXP 1n4005 1N4002
    Text: 1N4001 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4007 SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * * * * * Case: Molded plastic


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    PDF 1N4001 1N4007 DO-41 MIL-STD-202E 1N4004 1N4005 1N4002 1N4003 1N4004 1n4007 diode 1N4005 specifications 1N4001 1n4006 diode 1N4006 specifications 1N4002,1N4003,1N4004,1N4005,1N4006,1N4007 1N4004 1N4007 MINIMELF DO214 1N4004 1N4007 NXP 1n4005 1N4002

    ROHM 1N4001A

    Abstract: 1N4001 general diodes diodes 1N4001 1N4001A 1N4001 silicon N4002A 1N4002A
    Text: f f -4 ¿i — K/Diodes 1N4001 A/1 N4002A/1N4003A/1N4004A 1N4001 A/1 N4002A/1N4003A/ 1N4004A Silicon Diffused Junction General Rectifying Diodes • • « ft //Dimensions Unit : mm 1) * ' V 7 , i 4 i t T & -5 (JEDEC : DO41 ) 0 2) 5 o 3) • Features 1) Glass sealed type (JEDEC : DO41).


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    PDF 1N4001 N4002A/1N4003A/1N4004A N4002A/1N4003A/ 1N4004A 1N4001A 1N4002A 1N4003A 1N4004A 1N4001A ROHM 1N4001A 1N4001 general diodes diodes 1N4001 1N4001 silicon N4002A

    EQUIVALENT OF 1N4001

    Abstract: 1N4001 EQUIVALENT 1N 4007 TY
    Text: 1N4001 THRU 1N4007 MINIATURE PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Fiammability Classification 94V-0 ♦ Low cost construction utilizing void-free molded plastic technique


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    PDF 1N4001 1N4007 DO-41, EQUIVALENT OF 1N4001 1N4001 EQUIVALENT 1N 4007 TY