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    1N320 Search Results

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    1N320 Price and Stock

    Vishay Semiconductors VS-1N3208

    DIODE GEN PURP 50V 15A DO203AB
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    DigiKey VS-1N3208 Bulk 96 1
    • 1 $10.33
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    Microchip Technology Inc 1N3209

    STANDARD RECTIFIER
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    DigiKey 1N3209 Bulk 100
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    Mouser Electronics 1N3209
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    Newark 1N3209 Bulk 100
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    Microchip Technology Inc 1N3209 29 Weeks
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    Onlinecomponents.com 1N3209
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    Master Electronics 1N3209
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    GeneSic Semiconductor Inc 1N3209

    DIODE GEN PURP 100V 15A DO5
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    DigiKey 1N3209 Bulk 1,000
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    NAC 1N3209 100
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    Vishay Semiconductors VS-1N3209

    DIODE GEN PURP 100V 15A DO203AB
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    Vishay Semiconductors VS-1N3209R

    DIODE GEN PURP 100V 15A DO203AB
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    1N320 Datasheets (148)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N320 General Diode Lead Mounted Silicon Power Rectifiers Scan PDF
    1N320 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N320 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N320 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N320 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3200 General Diode 8.4V, .27Wt General purpose voltage reference/regulator diode Scan PDF
    1N3200 Microsemi Data Book 1983 Scan PDF
    1N3200 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3200 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3200 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3200 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3201 General Diode 8.4V, .27Wt General purpose voltage reference/regulator diode Scan PDF
    1N3201 Microsemi Data Book 1983 Scan PDF
    1N3201 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3201 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3201 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3202 General Diode 8.4V, .27Wt General purpose voltage reference/regulator diode Scan PDF
    ...

    1N320 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5332

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N3208-1N3214, 1N5332 STANDARD RECOVERY RECTIFIERS MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +200°C TJ Operating junction temperature range -65 to +200°C RθJC Maximum thermal resistance 1.25°C/W junction to case


    Original
    PDF 1N3208-1N3214, 1N5332 1N3208 1N3209 1N3210 1N3211 1N3212 1N3213 1N3214 1N5332

    1N3208

    Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
    Text: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and


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    PDF 1N3208 DO-203AB 1N1183, 1N3765, 1N1183A, 1N2128A, 28UNF-2A 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB

    DIODE 1n1183

    Abstract: No abstract text available
    Text: VS-1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and


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    PDF VS-1N3208 DO-203AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DIODE 1n1183

    Untitled

    Abstract: No abstract text available
    Text: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 15 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.


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    PDF 1N3208 1N3211R 1N3208 1N3209 1N3210 1N3211

    Untitled

    Abstract: No abstract text available
    Text: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and


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    PDF 1N3208 DO-203AB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    1N3209

    Abstract: 1N3208 1N3208R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
    Text: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and


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    PDF 1N3208 DO-203AB 2002/95/EC 18-Jul-08 1N3209 1N3208R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB

    Untitled

    Abstract: No abstract text available
    Text: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 300 V IF = 15 A Features • High Surge Capability • Types from 50 V to 300 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.


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    PDF 1N3208 1N3211R 1N3208 1N3209 1N3210 1N3211 DO-203AB)

    Untitled

    Abstract: No abstract text available
    Text: 1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and


    Original
    PDF 1N3208 DO-203AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    1N3208

    Abstract: 1N3208R 1N3209 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
    Text: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and


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    PDF 1N3208 DO-203AB 2002/95/EC 11-Mar-11 1N3208R 1N3209 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB

    1N3208

    Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
    Text: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and


    Original
    PDF 1N3208 DO-203AB 18-Jul-08 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB

    Untitled

    Abstract: No abstract text available
    Text: 1N3208 Silicon Rectifier 7.88 Diodes Silicon Rectifiers General-Purpose American Micr. Page 1 of 1 Enter Your Part # Home Part Number: 1N3208 Online Store 1N3208 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 1N3208 1N3208 DO-203AB com/1n3208

    1N3209

    Abstract: No abstract text available
    Text: 1N3209 100V 15A Std. Recovery Diode In A DO-203AB DO-5 package 4.87 Diodes Si. Page 1 of 1 Enter Your Part # Home Part Number: 1N3209 Online Store 1N3209 Diodes 100V 15A Std. Recovery Diode In A DO-203AB (DO-5) Transistors package Integrated Circuits Optoelectronics


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    PDF 1N3209 DO-203AB 1N3209 DO-203AB com/1n3209

    A41E

    Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
    Text: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­


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    PDF 1N248B-50B 1N1195A-98 1N2154-60 1N3765-68 1N5332 1N4529-30 1N1183A-90A 1N3899-3903 1N3909-13 1N3208-14 A41E A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B

    N3206

    Abstract: 1N3206 in 3 N3064M
    Text: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MCOOlj MCOOIAj MC002 Microsemi Corp. s c o rra , ^ j For more information call: 714 979-8220 / PELLET DIODES FEATURES • M ic r o m in ia tu r e p a c k a g e . • F a s t re c o v e ry .


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    PDF 1N897 1N902, 1N3064M, 1N3069M, 1N3206 1N3207, MC914, MC914A, MC916, MC916A, N3206 in 3 N3064M

    1N3208

    Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211
    Text: Data Sheet No. PD-2.010C INTERNATIONAL RECTIFIER I«R 1N3208 SERIES 15 Amp Stud-mounted Silicon Rectifier Diodes M ajor Ratings and Characteristics it A v ; 0 1C |2 t U n its 15* A 150* o<- '• 5 0 h 239 X o CD lc-s~M Description/Features 1N 32D 8 250* & 5C H r


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    PDF 1N3208 1/4-23UNF-2A 00-203AB 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211

    a44e

    Abstract: diode ge a40f A45A 1N3909-13 A44M A139 A45E A45M A44B A44A
    Text: RECTIFIERS 20 TO 25 AMPERES 1N 248& 50B JEO EC 1N 1195 A98A 1N215460 - GE T Y P E 1N1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A - 1N390913 1N320814 - - A 40F A 44F 1N38993903 A139 S P E C IF IC A T IO N S *FM A V Max. average forward current (1 phase oper­


    OCR Scan
    PDF 1N248B-50B 1N1195A-98 1N2154-60 1N3765-68 1N5332 1N4529-30 1N1183A-90A 1N3899-3903 1N3909-13 1N3208-14 a44e diode ge a40f A45A A44M A139 A45E A45M A44B A44A

    1N3206

    Abstract: 1N3064M 1n900 MC914 1N3069M 1N3207 1N897 1N902 MC001 MC914A
    Text: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, / Microsemi Corp. f m SCOTTSDALE, AZ / / F o r m o r e in f o r m a ti o n call: 7I4 979-S220 M C 9lO , M C 910A , The diode experts / SANTA ANA, CA MC001, MC001A, MC002 PELLET DIODES FEATURES


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    PDF 1N897 1N902, 1N3064M, 1N3069M, 1N3206 1N3207, MC914, MC914A, MC916, MC916A, 1N3064M 1n900 MC914 1N3069M 1N3207 1N902 MC001 MC914A

    in3208

    Abstract: In3209 IN3212 IN3214 1N3210 1N3209 EDAL 4156 1N3208 1N3212
    Text: EDAL INDUSTRIES INC M5E D 3GTS71b DOODB'iD EÔ3 IEDL HEX. 11/16“ ACROSS FLATS Of ' / 7 N .150” B. PIV See Tab I e Io 15 amps IS. 150 2sn _ AMPS 1.5 _V @ CASE 40 amps 25 1 ma PIV 25 10 ma PIV 150 STYLE_ D05 STAMP Edal P/N P/N ' PIV volts 1N3208 1N3209


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    PDF 3GTS71b 1N3208 1N3209 1N3210 IN321I 1N3212 1N3213 1N3214 IN3208-IN3214 ManufacturerN3208-IN3214 in3208 In3209 IN3212 IN3214 EDAL 4156

    MC 4011 B

    Abstract: 1N3207
    Text: MIL SPECS I C | 0 0 G D 1 2 S DOOSSEb T |~~ INCH-POUND NOTICE OF VALIDATION MIL-S-19500/230C NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN - 1N3207 Military specification MIL-S-19500/230C, dated 12 February


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    PDF 00GD12S MIL-S-19500/23OC 1N3207 MIL-S-19500/230C, MIL-S-19500. MIL-S-19500 MC 4011 B 1N3207

    1N2155

    Abstract: 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A
    Text: DIODE TRANSISTOR CQ,1HIC. | RECTIFIERS 20 TO 40A AMPERES JEOEC 1N248B50B 1N 1195A - 1N2154* I N 5332 1N4529* 1N1183A- 30 90A 1N38993903 1N3909* 13 1N320814 98A 60 20 25 35 35 40 20 30 20 150 145 140 115 150 100 100 110 S P E C IF IC A T IO N S IFM AV Max. average forward


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    PDF 515TQR 1N248B- 1N1195A- 1N2154- 1N4529- 1N1183A- 1N3899- 1N3909- 1N3208- 1N248B 1N2155 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


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    PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    1N93A

    Abstract: 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526
    Text: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur­


    OCR Scan
    PDF 1N1183-90 1N248B-50EI 1N1195A-98A 1N2154-60 1N3765-68 1N1183Ã 1N3899-3903 1N3909-13 1N4529-30 1N5332 1N93A 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526

    ic 4016

    Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
    Text: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August


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    PDF 0005S3M MIL-S-19500/195D 1N3206 MIL-S-19500/195D, QQ0012S MIL-S-19500. MIL-S-19500 1N4373 ic 4016 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details

    Untitled

    Abstract: No abstract text available
    Text: 1 rT T n m P A A / f t O A / i i Y H J ü - ö - J . » a U U / 60\JKs AMENDMENT 1 12 September 1968 SEMICONDUCTOR DEVICE, DIODE, bluCuN , HIGH-CONDUCTANCE TYPE JAN-1N3207 This amendment forms a part of Military Specification MIL-S-195Q0/230C, dated 12 February 1965, and is mandatory for use by all Departments and


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    PDF JAN-1N3207 MIL-S-195QQ/230C,