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    1GHZ NPN POWER Search Results

    1GHZ NPN POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    1GHZ NPN POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:|S21e| = 10.5dB (typ.) (@ f=1GHz)


    Original     		PDF MT3S113P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB typ. (@ f=1GHz) • High Gain:|S21e| =11.8dB (typ.) (@ f=1GHz) 2


    Original     		PDF MT3S113 O-236 SC-59

    Untitled

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113P SC-62

    MT3S113

    Abstract: transistor 2F to-236 4360A
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113 O-236 SC-59 MT3S113 transistor 2F to-236 4360A

    Untitled

    Abstract: No abstract text available
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113 O-236 SC-59

    mt3s113p

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113P SC-62 mt3s113p

    Untitled

    Abstract: No abstract text available
    Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF = 1.5dB typ. (@f=1GHz) • High Gain: |S21e| = 10.5dB (typ.) (@f=1GHz) 2 Marking


    Original     		PDF MT3S22P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 • Low Noise Figure:NF=1.5dB Typ. (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) 0.42 -0.05 +0.08 0.17 -0.07


    Original     		PDF MT3S19R

    Untitled

    Abstract: No abstract text available
    Text: MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 • Low Noise Figure:NF=1.45dB Typ. (@ f=1GHz) • High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 0.42 -0.05 +0.08 0.17 -0.07


    Original     		PDF MT3S20R OT23F

    Untitled

    Abstract: No abstract text available
    Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking PW-Mini


    Original     		PDF MT3S22P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB typ. (@f=1GHz) • High Gain: |S21e| =11dB (typ.) (@f=1GHz) 2 Marking M U


    Original     		PDF MT3S20P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking PW-Mini


    Original     		PDF MT3S20P SC-62

    EN5045

    Abstract: 5045-2 2SC5229 sanyo 982 TA-0244
    Text: Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Package Dimensions unit:mm 2038A [2SC5229] 4.5 1.6 1.5 0.4 1.0 2.5 • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=10.5dB typ (f=1GHz).


    Original     		PDF EN5045 2SC5229 2SC5229] S21e2 25max EN5045 5045-2 2SC5229 sanyo 982 TA-0244

    Untitled

    Abstract: No abstract text available
    Text: MT3S16FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16FS Unit: mm • :NF = 2.4 dB @ 2V, 5mA,1GHz 2 :|S21e| = 4.5 dB (@ 2V, 10mA,1GHz) Lead (Pb)-free. 0.2±0.05 The Cre curve is flat. 0.35±0.05 fT is high and current dependability is excellent.


    Original     		PDF MT3S16FS

    MT3S20P

    Abstract: No abstract text available
    Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini


    Original     		PDF MT3S20P SC-62 MT3S20P

    2SC5229

    Abstract: ITR07941 ITR07942 ITR07943 ITR07944 ITR07945 MARKING CY of 8404
    Text: Ordering number:ENN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ.


    Original     		PDF ENN5045 2SC5229 S21e2 2SC5229] 25max 2SC5229 ITR07941 ITR07942 ITR07943 ITR07944 ITR07945 MARKING CY of 8404

    MT3S22P

    Abstract: No abstract text available
    Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini


    Original     		PDF MT3S22P SC-62 MT3S22P

    MT3S150P

    Abstract: TOSHIBA MICROWAVE AMPLIFIER
    Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1GHz • High Gain: |S21e| =11.5dB (@f=1GHz) 2 Marking Ｍ Ｐ Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S150P MT3S150P TOSHIBA MICROWAVE AMPLIFIER

    J552

    Abstract: J3510 j528 ultrarf J5-28 UPB1001B J418 J351
    Text: URFDB Sec 03_1001B 11/3/99 10:17 AM Page 3-1 UPB1001B 1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 1W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF 1001B UPB1001B 30dBc 140mA 100oC 175oC J552 J3510 j528 ultrarf J5-28 UPB1001B J418 J351

    MT3S19R

    Abstract: No abstract text available
    Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.5dB Typ. (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz)


    Original     		PDF MT3S19R MT3S19R

    MT3S20R

    Abstract: No abstract text available
    Text: MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.45dB Typ. (@ f=1GHz) • High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz)


    Original     		PDF MT3S20R MT3S20R

    Untitled

    Abstract: No abstract text available
    Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure: NF=1.5dB typ. (@ f=1GHz) • High Gain: |S21e| =13dB (typ.) (@ f=1GHz)


    Original     		PDF MT3S19R OT23F

    Untitled

    Abstract: No abstract text available
    Text: MT3S20TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 2 0.7±0.05 Marking 1 0.166±0.05 High Gain:|S21e|2=12dB Typ. (@ f=1GHz) 0.65±0.05 Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz)


    Original     		PDF MT3S20TU

    2SC5227

    Abstract: EN5034 IC marking jw marking S221 JB1 MARKING
    Text: Ordering number:EN5034 N”5034 2SC5227 ¡I NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatures • Low noise : NF = 1.0dB typ f= 1GHz . - High gain: | S21e I 2= 12dB typ (f= 1GHz). • High cutoff frequency : fx=7GHztyp.


    OCR Scan     		PDF EN5034 2SC5227 10VfIE; IS12I IC marking jw marking S221 JB1 MARKING