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    1F000 Search Results

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    TE Connectivity ORWH-SH-112D1F,000

    RELAY GEN PURPOSE SPDT 10A 12V
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    DigiKey ORWH-SH-112D1F,000 Tray 55,031 1
    • 1 $1.61
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    • 10000 $0.98007
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    Mouser Electronics ORWH-SH-112D1F,000 30,360
    • 1 $1.46
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    • 100 $1.06
    • 1000 $0.858
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    Newark ORWH-SH-112D1F,000 Bulk 1,560 1
    • 1 $2.03
    • 10 $1.91
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    Bristol Electronics ORWH-SH-112D1F,000 250
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    TTI ORWH-SH-112D1F,000 Tube 39,950 25
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    Broadcom Limited HLMP-Y301-F0000

    LED RED CLEAR T-1 T/H
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    DigiKey HLMP-Y301-F0000 Bulk 46,996 1
    • 1 $0.32
    • 10 $0.185
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    • 1000 $0.08081
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    Mouser Electronics HLMP-Y301-F0000 40,029
    • 1 $0.32
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    EBV Elektronik HLMP-Y301-F0000 26 Weeks 2,000
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    Broadcom Limited HLMP-3301-F0002

    LED RED DIFFUSED T-1 3/4 T/H
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    DigiKey HLMP-3301-F0002 Cut Tape 2,687 1
    • 1 $0.56
    • 10 $0.329
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    HLMP-3301-F0002 Reel 2,600 1,300
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    EBV Elektronik HLMP-3301-F0002 19,500 24 Weeks 1,300
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    TDK Electronics B84111F0000M116

    LINE FILTER 250VAC/VDC 16A CHASS
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    DigiKey B84111F0000M116 Bulk 433 1
    • 1 $23.39
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    Newark B84111F0000M116 Bulk 39 1
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    TME B84111F0000M116 30
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    TDK Electronics B84111F0000B060

    LINE FILTER 250VAC/VDC 6A CHASS
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    DigiKey B84111F0000B060 Bulk 65 1
    • 1 $20.66
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    Newark B84111F0000B060 Bulk 12 1
    • 1 $17.21
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    TME B84111F0000B060 40
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    1F000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1F000000-A004-F

    Abstract: EMC APPLICATION
    Text: SPECIFICATIONS FUTURE BUS CONNECTOR 1F Series Shield Cover for Future Bus Connector EMC Application Physical Shield Cover: Zinc Ally Spring: Phosphor Bronze DRAWING ORDERING I NF OR MATI ON PRODUCT NO.: 1F000000-A004-F Plating Spec. 0:120u" Min Cu Undrtplating Over All


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    PDF 1F000000-A004-F 24pos) 1F000000-A004-F EMC APPLICATION

    Untitled

    Abstract: No abstract text available
    Text: FUTURE BUS CONNECTOR SPECIFICATIONS 1F Series Shield Cover for Future Bus Connector EMC Application Physical Shield Cover: Zinc Ally Spring: Phosphor Bronze DRAWING ORDERING I NF OR MATI ON PRODUCT NO.: 1F000000-A002-F Plating Spec. 0:120u" Min Cu Undrtplating Over All


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    PDF 1F000000-A002-F

    MX25L1635D

    Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
    Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5


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    PDF MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


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    PDF MX25L1673E PM1912

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


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    PDF 78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    PDF 3581D AT49BV320D AT49BV320DT SA70 AT49BV

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    PDF W19B320AT/B w19b320

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


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    PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


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    PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


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    PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    msc 1697

    Abstract: el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431 DSP56300
    Text: MOTOROLA Order this document by: DSP56302/D SEMICONDUCTOR TECHNICAL DATA DSP56302 Advance Information 24-BIT DIGITAL SIGNAL PROCESSOR 3 SCI Interface Program RAM 20480 x 24 or X Data Y Data Program RAM RAM RAM 19456 × 24 and × × 24 7168 24 7168 Instruction


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    PDF DSP56302/D DSP56302 24-BIT DSP56302 DSP56300 msc 1697 el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    XC56303PV80

    Abstract: pcr1a XC56303PV66 DSP56000 DSP56300 DSP56303 HA10 msc 1697 XC56303GC100 MCE Semiconductor
    Text: MOTOROLA Order this document by: DSP56303/D SEMICONDUCTOR TECHNICAL DATA DSP56303 Advance Information 24-BIT GENERAL PURPOSE DIGITAL SIGNAL PROCESSOR The DSP56303 is a member of the DSP56300 core family of programmable CMOS Digital Signal Processors DSPs . This family uses a high performance, single-clock-cycle-per-instruction


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    PDF DSP56303/D DSP56303 24-BIT DSP56303 DSP56300 DSP56000 DSP56300 XC56303PV80 pcr1a XC56303PV66 HA10 msc 1697 XC56303GC100 MCE Semiconductor

    TE28F640J3C-120

    Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


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    PDF 28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


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    PDF W28J320B/T 16/4M

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data DSP56311 Rev. 8, 2/2005 DSP56311 24-Bit Digital Signal Processor 3 16 6 6 Memory Expansion Area EFCOP Peripheral Expansion Area Address Generation Unit Six Channel DMA Unit X Data RAM 48 K x 24 bits YAB XAB PAB DAB Y Data


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    PDF DSP56311 24-Bit 24-Bit DSP56300

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    JESD94

    Abstract: No abstract text available
    Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S25FL116K 16-Mbit S25FL116K JESD94

    S25FL116K

    Abstract: No abstract text available
    Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S25FL116K 16-Mbit S25FL116K

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan
    PDF 50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30