Untitled
Abstract: No abstract text available
Text: 1E1 thru 1E5 Fast Recovery ectifiers Reverse Voltage 50 to 600V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratory * * * * * * * * Flammability Classification 94V-0 High temperature metallurgically bonded construction Diffused junction
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MIL-S-19500
MIL-STD-750,
DO-201ADç
D0-201AD
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Untitled
Abstract: No abstract text available
Text: Contents Panels & Adaptors Page 82 Ventilated Panels Page 84 Doors & Chassis - Panel Mount Page 86 Shelves & Slides Page 87 Keyboard Shelves Page 92 Drawers Page 93 80 Hammond Manufacturing Co. Ltd. 394 Edinburgh Rd. North Guelph, Ontario N1H 1E5 CANADA
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1427BK
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BAT54CWT1G
Abstract: BAT54SWT1G
Text: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage
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BAT54SWT1G/BAT54CWT1G
BAT54SWT1G
BAT54CWT1G
OT-323
BAT54SWT1G/BAT54CWT1G
BAT54CWT1G
BAT54SWT1G
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Untitled
Abstract: No abstract text available
Text: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 2 1 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage
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BAT54SWT1G/BAT54CWT1G
BAT54SWT1G
BAT54CWT1G
OT-323
BAT54SWT1G/BAT54CWT1G
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n312ad
Abstract: No abstract text available
Text: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N312AD3ST/
ISL9N312AD3
1450pF
O-252
O-252)
O-251AA)
n312ad
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Untitled
Abstract: No abstract text available
Text: FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves
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FQB95N03L
2600pF
O-263AB
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35KP
Abstract: FQB95N03L
Text: FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves
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FQB95N03L
2600pF
O-263AB
35KP
FQB95N03L
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n312ad
Abstract: TO-252AA Package N312A
Text: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N312AD3ST
1450pF
O-252
n312ad
TO-252AA Package
N312A
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n312ad
Abstract: ISL9N312AD3ST 25E5 tube ISL9N312AD3 11A ABS
Text: ISL9N312AD3 / ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N312AD3
ISL9N312AD3ST
1450pF
O-251AA)
O-252
O-252)
n312ad
ISL9N312AD3ST
25E5 tube
11A ABS
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N307AD
Abstract: ISL9N307AD3ST
Text: ISL9N307AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N307AD3ST
3000pF
O-252
N307AD
ISL9N307AD3ST
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Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
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KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
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N-308A
Abstract: TO-252 MOSFET
Text: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N308AD3ST
2600pF
O-252
N-308A
TO-252 MOSFET
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Untitled
Abstract: No abstract text available
Text: FQB95N03L N-Channel Logic Level MOSFETs 30V, 75A, 0.008Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQB95N03L
2600pF
O-263AB
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FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
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2511NZ
Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
dual mosfet tt 6 pin
Diode N7 S2
2511N
6 pin diode n10
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IRF640N
Abstract: 11A ABS IRF640N FAIRCHILD MOSFET 640N 640N irf640n datasheet N-Channel MOSFET 200v IRF-640N
Text: IRF640N N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models
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IRF640N
O-220
100oC,
IRF640N
11A ABS
IRF640N FAIRCHILD
MOSFET 640N
640N
irf640n datasheet
N-Channel MOSFET 200v
IRF-640N
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N308AP
Abstract: 35KP ISL9N308AP3 ISL9N308AS3ST
Text: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N308AP3/ISL9N308AS3ST
2600pF
O-263AB
N308AP
35KP
ISL9N308AP3
ISL9N308AS3ST
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ISL9N307AP3
Abstract: ISL9N307AS3ST N307AS
Text: ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N307AP3/ISL9N307AS3ST
3000pF
O-263AB
O-220AB
ISL9N307AP3
ISL9N307AS3ST
N307AS
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M043 Diode
Abstract: FDD26AN06A0 m043 FDD26AN
Text: FDD26AN06A0 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDD26AN06A0
O-252AA
M043 Diode
FDD26AN06A0
m043
FDD26AN
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n307ad
Abstract: N-307 TO-252 MOSFET
Text: ISL9N307AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N307AD3ST
3000pF
O-252
n307ad
N-307
TO-252 MOSFET
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N307AS
Abstract: ISL9N307AP3 ISL9N307AS3ST
Text: ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N307AP3/ISL9N307AS3ST
3000pF
O-263AB
O-220AB
N307AS
ISL9N307AP3
ISL9N307AS3ST
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FQP45N03LT
Abstract: FQP45N03L
Text: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03LT
FQP45N03L
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n312ad
Abstract: 69E-10
Text: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N312AD3ST
1450pF
O-252
n312ad
69E-10
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MIL-PRF-385353
Abstract: 1E6 MARKING 1E5 MARKING
Text: 3,0 Ordering Information Rad-Hard MSI - 14-LEAD PACKAGES: MILITARY TEMPERATURE RANGE, CLASS Q, & CLASS V UT54 * * - * * * * Total Dose: H = 1E6 rads(Si) (R) = 1E5 rads(Si) ( ) = Total dose characteristics neither tested nor guaranteed Lead Finish:1 (A) = Hot solder dipped
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14-LEAD
MIL-PRF-385353
16-lead
20-lead
MIL-PRF-38535
MIL-PRF-385353
1E6 MARKING
1E5 MARKING
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