1DON TRANSISTOR Search Results

1DON TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1DON TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ANP015 Abstract: AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v AP2011 SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM Text: ANP015 Application Note AP2011 High Efficiency Synchronous PWM Controller Preliminary Contents 1. AP2011 Specification 1.1 1.2 1.3 1.4 Features General Description Pin Assignments Pin Descriptions 1.5 Block Diagram 1.6 Absolute Maximum Ratings 2. Hardware	Original	PDF	ANP015 AP2011 ANP015 AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Tsp = 25 °C Drain current (DC) Tamb = 25 °C Total power dissipation Junction temperature	OCR Scan	PDF	OT223
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION PINNING - SOT404 QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface	OCR Scan	PDF	OT404 BUK9656-30
BUK10B-S0GS Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSF:ET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.	OCR Scan	PDF	BUK108-50GS hs/hs25 BUK10B-S0GS
BUK102-50GL Abstract: IEC134 T0220AB AAB3 buk102-500l Text: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and	OCR Scan	PDF	7110A2b D0b3fl25 BUK102-50GL ll3/lls25t IEC134 T0220AB AAB3 buk102-500l
Untitled Abstract: No abstract text available Text: m h a r r H FA1405 i s S E M I C O N D U C T O R • M M M T T Quad, High-Speed, Low Power, Video Operational Amplifier February1995 Description Features • M l Low Supply Current.5.8mA/OpAmp • High Input	OCR Scan	PDF	FA1405 560MHz 50MHz)