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    1D TRANSISTOR Search Results

    1D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1D TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083PWT1G z 3 Ordering Information Device 1 Marking 2 Shipping L2SC4083PWT1G 1D 3000/Tape&Reel L2SC4083PWT1G 1D 10000/Tape&Reel


    Original     		PDF L2SC4083PWT1G 3000/Tape 10000/Tape SC-70/SOT-323

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel


    Original     		PDF LMBTA42LT1G LMBTA43LT1G OT-23 3000/Tape LMBTA42LT3G 10000/Tape

    L2SC4083PWT1G

    Abstract: transistor wE
    Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083PWT1G z 3 Ordering Information Device 1 Marking 2 Shipping L2SC4083PWT1G 1D 3000/Tape&Reel L2SC4083PWT1G 1D 10000/Tape&Reel


    Original     		PDF L2SC4083PWT1G 3000/Tape 10000/Tape SC-70/SOT-323 L2083PWT1G SC-70 OT-323 L2SC4083PWT1G transistor wE

    LMBTA42LT1

    Abstract: LMBTA42LT1G LMBTA43LT1 LMBTA43LT1G 1d sot-23
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1 LMBTA43LT1 ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 1D SOT-23 3000/Tape&Reel 1D Pb-Free SOT-23 3000/Tape&Reel M1E SOT-23 3000/Tape&Reel


    Original     		PDF LMBTA42LT1 LMBTA43LT1 OT-23 3000/Tape LMBTA42LT1 LMBTA42LT1G LMBTA43LT1 LMBTA43LT1G 1d sot-23

    402w

    Abstract: No abstract text available
    Text: User's Guide SBOU049A – April 2007 – Revised April 2009 DEM-OPA-SO-1D Demonstration Fixture 1 Description The DEM-OPA-SO-1D demonstration fixture is an unpopulated printed circuit board PCB for single 2:1 multiplexers in SO-8 packages. Figure 1 shows the package pinout for this PCB. For more information on


    Original     		PDF SBOU049A 402w

    1d sot-23

    Abstract: M1E SOT-23 LMBTA43LT1G LMBTA43LT1 LMBTA42LT1G MARK CB SOT23 SOT-23 m1e
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel


    Original     		PDF LMBTA42LT1G LMBTA43LT1G OT-23 3000/Tape LMBTA42LT3G 10000/Tape 1d sot-23 M1E SOT-23 LMBTA43LT1G LMBTA43LT1 LMBTA42LT1G MARK CB SOT23 SOT-23 m1e

    a42 SMD

    Abstract: CMBTA42 CMBTA43 SMD MARKING A42 A42 1d sot-23 CMBT A42 1d sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBTA42 CMBTA43 C-120 a42 SMD CMBTA42 CMBTA43 SMD MARKING A42 A42 1d sot-23 CMBT A42 1d sot-23

    1D SOT23

    Abstract: sot23 marking 1d transistor SOT23 1d 1d sot-23 marking
    Text: MMBTA42 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High breakdown voltage — Low collector-emitter saturation voltage — Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBTA42 OT-23 OT-23 MMBTA92 30MHz 1D SOT23 sot23 marking 1d transistor SOT23 1d 1d sot-23 marking

    SMD MARKING A42

    Abstract: a42 SMD wa43 marking a42 sot-23 smd a42 CMBTA42 CMBTA43 CMBTA
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBTA42 CMBTA43 C-120 SMD MARKING A42 a42 SMD wa43 marking a42 sot-23 smd a42 CMBTA42 CMBTA43 CMBTA

    SMD MARKING A42

    Abstract: a42 SMD CMBTA42 smd a42 CMBTA43 npn A42
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBTA42 CMBTA43 C-120 SMD MARKING A42 a42 SMD CMBTA42 smd a42 CMBTA43 npn A42

    MV-S100649-00

    Abstract: Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111
    Text: 7v u3 M 1z AR zf VE nu LL a-e CO 468 NF 1d ID ge EN * M 7v TI ar u3 AL ve M 1z , U ll S AR zf ND em VE nu ER ic LL a-e NDond CO 468 A# uc NF 1d 02 tor, ID ge EN * M 13 In 03 c. TI ar AL ve , U ll S ND em ER ic NDond A# uc 02 tor, 13 In 03 c. MARVELL CONFIDENTIAL


    Original     		PDF 88E1111 MV-S100649-00, 7vu31zzfnua-e4681dge MV-S100649-00 Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H


    Original     		PDF OT-23 BC846 BC847 BC848 BC846 BC846A BC846B BC847A BC847B

    smd TRANSISTOR 1D

    Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h

    MMBTA42

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTA42 Features • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation NPN Silicon High Voltage Transistor C Pin Configuration Top View 1D B E


    Original     		PDF MMBTA42 OT-23 300mWatts OT-23 200Vdc, MMBTA42

    transistor smd marking PE

    Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W transistor smd marking PE SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBTA42 CMBTA43 C-120

    SOT89 MARKING CODE 43

    Abstract: SXTA42 43 MARKING
    Text: NPN Silicon High Voltage Transistors SXTA 42 SXTA 43 High breakdown voltage ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXTA 42 SXTA 43 1D 1E Q68000-A8394 Q68000-A8650 B SOT-89


    Original     		PDF Q68000-A8394 Q68000-A8650 OT-89 SOT89 MARKING CODE 43 SXTA42 43 MARKING

    G20N50c

    Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
    Text: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC


    OCR Scan     		PDF 40E1D O-218AC HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) G20N50c 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c

    DC chopper

    Abstract: 1DI75E-100 1DI75E-055 1di75 SE 265
    Text: /\°7 —7“V W 7 / Power Devices JfcÉP üf^i 600V?^3. 600 volts class power transistor modules for DC chopper m se Device type VcBO Volts 1DI75E-055 1D I200E -055 1D I200K -055 600 600 600 Vceo feus V o te 550 550 550 Ic Cont. Amps. 75 200 200 Pc Watts


    OCR Scan     		PDF 1DI75E-055 I200E I200K 1DI75E-100 I75F-100 Am100 1DI75F-100 DC chopper 1di75 SE 265

    STGP10N50A

    Abstract: STGP10N50
    Text: SGS-THOMSON STGP10N50A 1D=0 _ ISOLATED GATE BIPOLAR TRANSISTOR IGBT PRELIMINARY DATA . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . VERY LOW ON-VOLTAGE DROP V Ce (s a t ) . HIGH RELIABILITY LEVEL . HIGH CURRENT CAPABILITY . OFF LOSSES INCLUDE TAIL CURRENT


    OCR Scan     		PDF STGP10N50A SC06560 00V/mS 00V//XS 50V/U 00V//is gc25i80 STGP10N50A STGP10N50

    d0147

    Abstract: 2SC SERIES 7626 transistor 1D TRANSISTOR TRANSISTOR 2SC npn, transistor, sc 107 b TAA 981 2SC3838K 2SC4083 T146
    Text: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: — 2SC3838K; AD^, where ★is hFE code — 2SC4083; 1D-*, where ★ is hFE code high transition frequency, typically


    OCR Scan     		PDF 2SC3838K 2SC4083 SC-59) SC-70) 2SC3838K; 2SC4083; 2SC3838K GD147bS 2SC3838K, d0147 2SC SERIES 7626 transistor 1D TRANSISTOR TRANSISTOR 2SC npn, transistor, sc 107 b TAA 981 2SC4083 T146

    BUK457-600B

    Abstract: T0220AB
    Text: bTE T> • N AMER PHILIPS/DISCRETE bt.S3 T 31 0 03 0 7 1D DBS ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance


    OCR Scan     		PDF S3T31 003071D BUK457-600B T0220AB

    npn, transistor, sc 107 b

    Abstract: 2sc low noise NF TRANSISTOR
    Text: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages 2SC3838K (SMT3) package marking: JO — 2SC3838K; AD^, where ★ is hFE code Lj — 2SC4083; 1D-*, where ★ is hFE code


    OCR Scan     		PDF 2SC3838K 2SC4083 SC-59) SC-70) 2SC3838K; 2SC4083; 2SC3838K 2SC40 2SC3838K, 2SC4083 npn, transistor, sc 107 b 2sc low noise NF TRANSISTOR

    SXTA42

    Abstract: TA-42
    Text: SIEM EN S NPN Silicon High Voltage Transistors SXTA 42 SXTA43 • High breakdown voltage • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 SXTA 42 SXTA 43 1D 1E Q68000-A8394 Q68000-A8650 B E C Package1)


    OCR Scan     		PDF SXTA43 Q68000-A8394 Q68000-A8650 OT-89 SXTA42 TA-42