FOR1B
Abstract: No abstract text available
Text: EM47CM1688SBB1 1 Revision1History1 1 Revision10.11 Jun.12012 1 -First1release.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Jun.120121 1/381 www.eorex.com1 1 EM47CM1688SBB1 1 1Gb1(8Mx8Bank×16)1Double1DATA1RATE131SDRAM1
|
Original
|
PDF
|
EM47CM1688SBB1
Revision10
1Double1DATA1RATE131SDRAM1
CL-11
1CL-21
141with1Burst1Chop1
1and18
196Ball-FBGA1
FOR1B
|
YEW-2575
Abstract: No abstract text available
Text: POWER TYPE MOS MOSX EU RoHS 小形酸化金属皮膜固定抵抗器 Fixed Metal Oxide Film Resistors Small type 小形金属皮膜固定抵抗器 Fixed Metal Film Resistors (Small type) •構造図 Construction C ② ③ ④ ⑤ φd ① ⑥ L 外装色：ラベンダー Coating color： Lavender
|
Original
|
PDF
|
5CL35A
3CL20A
YEW-2575
|
3502M
Abstract: 3tb52 M188A m184a
Text: FJUL63182A-02 ＭＳＭ６３１８２Ａ／１８４Ａ／１８８Ａ ユーザーズマニュアル 第 2 版 2001 年 12 月 10 日 4 FJUL63182A-02 ご 注 意 １． 本書に記載された内容は製品改善および技術改良等により将来予告なしに変更することがありま
|
Original
|
PDF
|
FJUL63182A-02
M182A
cadr14MSM63188A
M184A
M188A
3502M
3tb52
M188A
m184a
|
t3d43
Abstract: m184a T2D7 SEMI XXHX E10HZ PCF 7951 3502m TB 1275 N DATA SHEET 12-12B EASE63180
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
PDF
|
FJUL63182A-02
cadr14MSM63188A
M182A
M184A
M188A
MSM63182A/184A/188A
FJUL63182A-01
t3d43
m184a
T2D7 SEMI
XXHX
E10HZ
PCF 7951
3502m
TB 1275 N DATA SHEET
12-12B
EASE63180
|
74HC4096
Abstract: EQUIVALENT TIMER IC WITH CD 4060 rs flip-flop IC 7400 C4050A shiftregister PIPO C148A LS 7476 L1AA C4051A LS294
Text: Selection Guide C2MOS Logic TC74HC/HCT Series 2. High Speed CMOS Selection Guide GATE NAND HCOOA NOR AND OR INVERTER, BUFFER EXCLUSIVE OR/NOR SC HM ITT TRIGGER HC02A HC08A H C31A H C04A H C86A H C14A H C51A H C4049A M ULTI FUNCTION LEVEL SHIFTER HCTOOA HCT02A
|
OCR Scan
|
PDF
|
TC74HC/HCT
HC02A
HC08A
C4049A
HC125A
HCT244A
HC541A
HC242A
CT640A
HC652A
74HC4096
EQUIVALENT TIMER IC WITH CD 4060
rs flip-flop IC 7400
C4050A
shiftregister PIPO
C148A
LS 7476
L1AA
C4051A
LS294
|
LXXXXXXXX
Abstract: TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V
Text: «oaHaoooiMMMWfMMMMMM!9:^ v’*'» -• -■ -■ -^ jjÉBT *¿f5’00“’ '*'^ 7“T ■ ■ ■ ■ <1; .r {• o CY7C09569V CY7C09579V PRELIMINARY f:,ò b 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM • 3.3V Low o p e ratin g p ow er
|
OCR Scan
|
PDF
|
CY7C09569V
CY7C09579V
16K/32K
FLEx36â
CY7C09569V)
CY7C09579V)
25-micron
100-MHz
LXXXXXXXX
TNC 24 mk 2
026R
CY7C09569V
tb136
A14L
CY7C09579V
|
Untitled
Abstract: No abstract text available
Text: 3.3 V CMOS 16-BIT BUSTRANSCEIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635mm pitch SSOP, 0.50mm pitch TSSOP,
|
OCR Scan
|
PDF
|
16-BIT
250ps
MIL-STD-883,
200pF,
635mm
16-bit
ALVCH16245
IDT74ALVCH16245
|
Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 16-BIT BUS BUSTRANSCEIVER WITH 3-STATE OUTPUTS AND BUS-HOLD IDT74ALVCH162245 DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
|
OCR Scan
|
PDF
|
16-BIT
IDT74ALVCH162245
250ps
MIL-STD-883,
200pF,
635mm
ALVCH162245:
|
Untitled
Abstract: No abstract text available
Text: GEC PLESSEY S I- M ] . ( \ I) 1J (. T O K 54HSC/T Series Radiation Hard High Speed CMOS/SOS Logic S S10504FSF Issue 1.4 N ovem ber 1990 Gates and Buffers Features 54H SC/T00 54HSC/T02 54HSC/T04 54HSC/T08 54HSC/T10 54H SC/T14 54HSC/T21 54HSC/T27 5 4 H SO T 3 2
|
OCR Scan
|
PDF
|
54HSC/T
S10504FSF
SC/T00
54HSC/T02
54HSC/T04
54HSC/T08
54HSC/T10
SC/T14
54HSC/T21
54HSC/T27
|
82801 SCHEMATIC DIAGRAM
Abstract: 5-101 pong rn isa io MIPI ISP Intel MIPI DSI spec ac9721 intel AF 82801 82801 g SCHEMATIC DIAGRAM it313 sch 5127
Text: intef i 82801AA ICH and Intet 82801AB (ICHO) I/O Controller Hub Datasheet A p r ii 1 9 9 9 O rder N um ber: 2^06 ^5-0 01 in Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
|
OCR Scan
|
PDF
|
82801AA
82801AB
82801AA
82801AB
82801 SCHEMATIC DIAGRAM
5-101 pong rn
isa io
MIPI ISP Intel
MIPI DSI spec
ac9721
intel AF 82801
82801 g SCHEMATIC DIAGRAM
it313
sch 5127
|
Untitled
Abstract: No abstract text available
Text: HARRIS SENICOND SECTOR 37E » M3GSS71 0Q213bl 0 1 E 13547 3875081 G E SOLID STATE T IHAS T-46-07-08 CD4013A Types Dual 'D’-Type Flip-Flop Voo 1“ The R CA-C D 4013A consists o f tw o identical. Independent data-type flip -flo p s. Each flip flo p has independent data, set, reset, and
|
OCR Scan
|
PDF
|
M3GSS71
0Q213bl
T-46-07-08
CD4013A
28-Lead
|
CQ 419
Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
Text: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof
|
OCR Scan
|
PDF
|
2SK2165-01
SC-65
CQ 419
oms 450
ifr mosfet
2SK2165-01
SC-65
2SK2165
|
dq35j
Abstract: Nippon capacitors
Text: MM2M0J32L / MM2M0J36L CMOS 2M x 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 64 Megabit Dynamic Random Access Memory Module organized as 2,097,152 x 32 x 36 bits in a 72 lead single inline module. The module contains sixteen 1M x 4bit Dynamic Random Access
|
OCR Scan
|
PDF
|
MM2M0J32L
MM2M0J36L
32bit
36bit
MM1M0J32L/J36L
MM2M0J32UMM2M0J36L
x32biVx36blt
dq35j
Nippon capacitors
|
Untitled
Abstract: No abstract text available
Text: bEE » MOSEL-VITELIC MOSEL- VITELIC • baSBB^l DDGSOSb 170 ■ MOVI V53C404F HIGH PERFORMANCE, LOW POWER 1 M X 4 BIT FAST PAGE MODE CMOS D YNAMIC RAM H IG H P E R F O R M A N C E V 5 3 C 4 0 4 F Max. RAS Access Time, tRAf. PRELIMINARY 6 0 /6 0 L 7 0 /7 0 L
|
OCR Scan
|
PDF
|
V53C404F
404FL
|
|
|
Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C8257H U LTR A -HIG H SPEED, 256KX 8B IT P A G E M O D E WITH E X TE N D E D DATA O U T P U T ED O A N D C A S B U R S T M O D E CM O S D YN A M IC R A M PR E LIM IN A R Y 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, Orac)
|
OCR Scan
|
PDF
|
V53C8257H
256KX
45/45L
50/50L
55/55L
60/60L
V53C8257H
VS3C8257H
|
DH311
Abstract: V53C100FK
Text: M O S E L V IT E L IC V53C1 OOF FAMILY HIGH PERFORMANCE, LOW POWER 1M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Max. CAS Access Time, (tCAC)
|
OCR Scan
|
PDF
|
V53C1
60/60L
V53C100F
70/70L
80/80L
V53C100FL
V53C100F-80
V53C100F-
V53C100FLl
V53C100F
DH311
V53C100FK
|
Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 16-BIT TRANS PARENT D-TYPE LATCH WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: IDT74ALVCH162373 larly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers. This device can be used as two 8-bit latches or one 16-bit latch. When
|
OCR Scan
|
PDF
|
16-BIT
IDT74ALVCH162373
16-BITTRANSPARENT
|
NN5118160A
Abstract: NN5118160B WA137
Text: NN5118160A / NN5118160B series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a DESCRIPTION The NN5118160A / NN5118160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN5118160A / B series is fabricated with advanced CMOS technology and designed with
|
OCR Scan
|
PDF
|
NN5118160A
NN5118160B
16bit
NN5118160A/NNS118160B
WA137
|
Untitled
Abstract: No abstract text available
Text: M O S EL V IT E L IC V53C 16258H 2 5 6 K X 16 P A G E M O D E C M O S D Y N A M IC R A M W ITH E X T E N D E D D A TA O U T P U T HIGH PERFORMANCE P R E LIM IN A R Y 45 50 55 60 Max. RAS Access Time, tRAc 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA)
|
OCR Scan
|
PDF
|
16258H
V53C16258H
V53C16258H
b3S33Tl
|
nn5117405
Abstract: No abstract text available
Text: NN5116405B / NN5117405B series EDO Hyper Page Mode CMOS 4M x 4bit Dynamic RAM NPN>a( DESCRIPTION The NN5116405B / NN5117405B series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 4-bits. The NN5116405B / NN5117405B series is fabricated with advanced CMOS technology and de
|
OCR Scan
|
PDF
|
NN5116405B
NN5117405B
nn5117405
|
V53C1625BH
Abstract: No abstract text available
Text: M O SEL V IT E U C V53C16258H 256K X 16 PAG E MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 45 50 55 60 Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, Ocaa) 22 ns 25 ns 28 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
|
OCR Scan
|
PDF
|
V53C16258H
16-bit
40-pin
V53C16258H
V53C1625BH
|
Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 16-BIT BUS BUSTRANSCEIVER WITH 3-STATE OUTPUTS DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635mm pitch SSOP, 0.50mm pitch TSSOP,
|
OCR Scan
|
PDF
|
16-BIT
250ps
MIL-STD-883,
200pF,
635mm
ALVC16245
IDT74ALVC16245
|
Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 16-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635mm pitch SSOP, 0.50mm pitch TSSOP,
|
OCR Scan
|
PDF
|
16-BIT
250ps
MIL-STD-883,
200pF,
635mm
ALVCHR162245
IDT74ALVCHR162245
|
Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 16-BIT EDGETRIGGERED D-TYPE FLIPFLOP WITH 3-STATE OUTPUTS AND BUS-HOLD IDT74ALVCH16374 DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
|
OCR Scan
|
PDF
|
16-BIT
IDT74ALVCH16374
250ps
MIL-STD-883,
200pF,
635mm
ALVCH16374:
|
