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    1BW SEMICONDUCTOR Search Results

    1BW SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1BW SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code 1AW

    Abstract: SMB10J6.0 marking code 1ay marking code 1bx marking code 1AM SMB-10 SMB8J11C
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional polarity only


    Original     		PDF SMB10 DO-214AA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code 1AW SMB10J6.0 marking code 1ay marking code 1bx marking code 1AM SMB-10 SMB8J11C

    marking code 1BL Diode

    Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA 08-Apr-05 marking code 1BL Diode 1bw 83 marking code 1AW J-STD-002B JESD22-B102D marking code 1ay

    marking 1af

    Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


    Original     		PDF SMB10J5 DO-214AA 50mVp-p 11-Mar-04 marking 1af marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW

    smb8j28

    Abstract: mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08 smb8j28 mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH

    marking CODE 1BS

    Abstract: 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 SMB10J5 MARKING 1BW 1BW MARKING marking CODE 1BH
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


    Original     		PDF SMB10J5 DO-214AA DO-214AA 08-Apr-05 marking CODE 1BS 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 MARKING 1BW 1BW MARKING marking CODE 1BH

    marking code 1BL Diode

    Abstract: marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002 SMB10
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020, 2002/95/EC 2002/96/EC DO-214AA 18-Jul-08 marking code 1BL Diode marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: FAC LENS NEW Fast-Axis Collimating Lens J10919 SERIES OVERVIEW The J10919 series FAC lens is an optical lens that collimates light spreading from a semiconductor laser in the fast-axis direction. Semiconductor lasers have a large divergence angle in the fastaxis direction, so the output light cannot be efficiently used unless


    Original     		PDF J10919 SE-171-41 OTH1005E01

    EIA/CCIR

    Abstract: ccd lens C8738 interline transistor 1BW 57
    Text: AR Y MI N PR ELI NIR LASER BEAM MONITOR C8738 FEATURES ●Image sensor exclusive sensitivity for NIR Spectral response: from 1.48 µm to 1.6 µm ●C-mount ●Video output BNC ●Compact and lightweight ●No distortion ●Long life APPLICATIONS ●Alignment / Evaluation of semiconductor lasers


    Original     		PDF C8738 TAPPB0077EA TAPPB0078EA SE-171-41 TAPP1039E02 EIA/CCIR ccd lens C8738 interline transistor 1BW 57

    marking code 1AW

    Abstract: marking code 1ay
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code 1AW marking code 1ay

    marking code 1BL Diode

    Abstract: mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA 08-Apr-05 marking code 1BL Diode mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL

    Photoconductive Cell

    Abstract: hamamatsu CDs photoconductive photoconductive cells characteristic photoconductive light sensor P1395-01 P2405 P2478-01 visible detector CDS 140 K cds light sensors
    Text: VISIBLE DETECTOR CdS photoconductive cell Resin coating • dual type Low cost dual-element sensor with standard size CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making


    Original     		PDF SE-171 KCDS1003E01 Photoconductive Cell hamamatsu CDs photoconductive photoconductive cells characteristic photoconductive light sensor P1395-01 P2405 P2478-01 visible detector CDS 140 K cds light sensors

    Untitled

    Abstract: No abstract text available
    Text: VISIBLE DETECTOR CdS photoconductive cell Resin coating • dual type Low cost dual-element sensor with standard size CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making


    Original     		PDF SE-171 KCDS1003E01

    Photoconductive Cell

    Abstract: photoconductive cells characteristic hamamatsu CDs photoconductive cds cell photoconductive light sensor P1096-06 P1195 P1202-12 P1202-16 P380-7R
    Text: VISIBLE DETECTOR CdS photoconductive cell Resin coating type 7R,10R type Standard type designed to withstand high voltage and high power CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These


    Original     		PDF SE-171 KCDS1002E01 Photoconductive Cell photoconductive cells characteristic hamamatsu CDs photoconductive cds cell photoconductive light sensor P1096-06 P1195 P1202-12 P1202-16 P380-7R

    Untitled

    Abstract: No abstract text available
    Text: Near-infrared streak camera C11293-02 New from Hamamatsu For picosecond time-resolved measurements of low level light emissions in the near-infrared region 1000 nm to 1650 nm with semiconductor photocathode (InP/InGaAs) 1400 1500 The new C11293-02 streak camera delivers much higher sensitivity in the


    Original     		PDF C11293-02 C11293-02 C11293 SHSS0014E03 MAY/2012

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    MSM photodiode

    Abstract: um 741 picosecond C4258 C4258-01 C4258-02 C4258-03 W-10 1BW semiconductor
    Text: PICOSECOND PHOTODETECTOR C4258 Series Ideal for optical pulse monitors for mode-synchronized pulse lasers and semiconductors in the visible to near-infrared regions! Spectral Response Characteristics FEATURES Integrated Power Supply 100 C4258-03 C4258-02 Fast Response of 50 ps


    Original     		PDF C4258 C4258-03 C4258-02 C4258-01 C4258, C4258-01) C4258 C4258-01: MSM photodiode um 741 picosecond C4258-01 C4258-02 C4258-03 W-10 1BW semiconductor

    P1201

    Abstract: Photoconductive Cell photoconductive cells characteristic cds light sensors P722-5R P1201-01 cds cell photoconductive cells CDS 140 K P1082-03
    Text: VISIBLE DETECTOR CdS photoconductive cell Resin coating type 5R type Standard type designed for general-purpose, wide application CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These


    Original     		PDF SE-171 KCDS1001E01 P1201 Photoconductive Cell photoconductive cells characteristic cds light sensors P722-5R P1201-01 cds cell photoconductive cells CDS 140 K P1082-03

    hamamatsu CDs photoconductive

    Abstract: Photoconductive Cell photoconductive light sensor p1241 CDS light sensor photoconductive cells cds cell photoconductive cells characteristic P1241-05 P1445
    Text: VISIBLE DETECTOR CdS photoconductive cell Resin coating type 5R type Standard type designed for general-purpose, wide application CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These


    Original     		PDF SE-171 KCDS1005E01 hamamatsu CDs photoconductive Photoconductive Cell photoconductive light sensor p1241 CDS light sensor photoconductive cells cds cell photoconductive cells characteristic P1241-05 P1445

    Untitled

    Abstract: No abstract text available
    Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times higher than that


    Original     		PDF S10044 S10044 S5106) S10045) SE-171 KPIN1076E01

    p621 b

    Abstract: p368 hamamatsu CDs photoconductive p621
    Text: VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making their


    Original     		PDF SE-171 KCDS1004E01 p621 b p368 hamamatsu CDs photoconductive p621

    p621 b

    Abstract: hamamatsu CDs photoconductive P1114-04 p621
    Text: VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making their


    Original     		PDF SE-171 KCDS1004E02 p621 b hamamatsu CDs photoconductive P1114-04 p621

    C6544-20

    Abstract: spectrophotometer automatic room light control with program 532 nm laser diode R5509-42 czerny laser gun photolum shg 1 C8232
    Text: Y NA R ELI MI PR NIR SPECTROPHOTOMETER C8232 High precision photometry even at low excitation powers Material evaluation such as in semiconductor research utilizing optical excitation in the near infrared region is a promising field. However, this field has been severely limited in making:


    Original     		PDF C8232 C8232 SE-171-41 TPMO1019E01 C6544-20 spectrophotometer automatic room light control with program 532 nm laser diode R5509-42 czerny laser gun photolum shg 1

    P621

    Abstract: Sunlight sensor P930 Photoconductive Cell hamamatsu CDs photoconductive P3872 P368 p621 b photoconductive cells photoconductive cells characteristic
    Text: VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making their


    Original     		PDF SE-171 KCDS1004E03 P621 Sunlight sensor P930 Photoconductive Cell hamamatsu CDs photoconductive P3872 P368 p621 b photoconductive cells photoconductive cells characteristic

    Untitled

    Abstract: No abstract text available
    Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its


    Original     		PDF S10044 S10044 S5106) S10045) SE-171 KPIN1076E02