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    1A00 Result Highlights (5)

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    RY7011A0000DZ00#001 Renesas Electronics Corporation Bluetooth® Low Energy Microcontrollers for Smart Connectivity Visit Renesas Electronics Corporation
    5P49V6901A000NLGI Renesas Electronics Corporation VersaClock® 6 Low Power Programmable Clock Generator Visit Renesas Electronics Corporation
    RY7011A0000DZ00#002 Renesas Electronics Corporation Bluetooth® Low Energy Microcontrollers for Smart Connectivity Visit Renesas Electronics Corporation
    5P49V5901A000NLGI Renesas Electronics Corporation VersaClock® 5 Low Power Programmable Clock Generator Visit Renesas Electronics Corporation
    5P49V5901A000NLGI8 Renesas Electronics Corporation VersaClock® 5 Low Power Programmable Clock Generator Visit Renesas Electronics Corporation
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    TDK Electronics B59721A0090A062

    SENSOR PTC 680OHM 50% 0805
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    DigiKey B59721A0090A062 Cut Tape 5,131 1
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    TDK Electronics B57820M0841A004

    THERMISTOR NTC 840OHM 3550K COIN
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    TDK Electronics B78419A2251A003

    CURR SENSE XFMR 1:100 SMD
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    MEC Switches A/S 1A00

    CAP TACTILE RECTANGULAR BLUE
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    Anytek Technology Corporation Ltd KE063161A00AG

    6POS TERM BLOCK HEADER
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    1A00 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1A00 Futaba RATED CURRENT FUSIBLE RESISTOR Original PDF
    1A00 MEC Accessories - Caps, Switches, CAP TACTILE RECTANGULAR BLUE Original PDF
    1A0004-10 Anaren Directional Coupler In-Line Style Original PDF
    1A0004-20 Anaren Directional Coupler In-Line Style Original PDF
    1A0004-3 Anaren Hybrid Coupler 3 dB, 90 Degree Original PDF
    1A0004-3 Anaren RF Directional Coupler, RF/IF and RFID, COUPLER 3DB 90DEG 800MHZ-1GHZ Original PDF
    1A0004-30 Anaren Directional Coupler In-Line Style Original PDF
    1A0005-10 Anaren Directional Couplers In-Line Style Original PDF
    1A0005-20 Anaren Directional Coupler In-Line Style Original PDF
    1A0005-3 Anaren Hybrid Coupler 3 dB, 90 Degree Original PDF
    1A0005-30 Anaren Directional Coupler In-Line Style Original PDF
    1A0006-10 Anaren Directional Coupler Original PDF
    1A0006-20 Anaren Directional Coupler Original PDF
    1A0006-3 Anaren Hybrid Couplers 3 dB, 90 degrees Original PDF
    1A0006-30 Anaren Directional Couplers In-Line Style Original PDF
    1A0024-3 Anaren Hybrid Coupler 3 dB, 90 Degree Original PDF
    1A0024-3 Anaren RF Directional Coupler, RF/IF and RFID, COUPLER 3DB 90DEG 500MHZ-2GHZ Original PDF
    1A0065 Cooper Bussmann Fuseholders, Circuit Protection, FUSE CLIP CART CHASSIS CHASSIS Original PDF

    1A00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1A0024-3

    Abstract: No abstract text available
    Text: Model 1A0024-3 3 dB, 90o Applications_ • Balanced Mixers • Antenna Feed Networks • Phasing Networks • Dividers/Combiners Features_ • • • • • • • • Military Grade 0.5 – 2.0 GHz 2–Way power Split Quadrature


    Original     		PDF 1A0024-3 MIL-C-39012 MIL-E-5400 1A0024-3

    1A0004-3

    Abstract: No abstract text available
    Text: Model 1A0004-3 3 dB, 90o Applications_ • Balanced Mixers • Antenna Feed Networks • Phasing Networks • Dividers/Combiners Features_ • • • • • • • • Military Grade 0.8 – 1.0 GHz 2–Way power Split Quadrature


    Original     		PDF 1A0004-3 MIL-C-39012 MIL-E-5400 1A0004-3

    1A0005-10

    Abstract: 1A0005-20 1A0005-30
    Text: Aluminum Cased Connectorized Components Model 1A0005-XX Directional Couplers “In-Line” Style Applications • Subassemblies • Lab Systems • Leveling Loops • Power Monitoring • Test and Calibration Features • Military Grade Electrical Specifications


    Original     		PDF 1A0005-XX MIL-C-39012 1A0005-10 1A0005-20 1A0005-30 MIL-E-5400 1A0005-10 1A0005-20 1A0005-30

    1A0006-3

    Abstract: FED-STD-595 MIL-C-22750 MIL-P-23377
    Text: Aluminum Cased Connectorized Components Model 1A0006-3 Hybrid Couplers 3 dB, 90° Applications • Balanced Mixers • Antenna Feed Networks • Phasing Networks • Divider/Combiners Features Electrical Specifications • Military Grade • 2-Way Power Split


    Original     		PDF 1A0006-3 MIL-C-39012 MIL-E-5400 MIL-STD-130 MIL-C-22750 FED-STD-595 MIL-P-23377 1A0006-3 FED-STD-595 MIL-C-22750 MIL-P-23377

    MX25L1635D

    Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
    Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5


    Original     		PDF MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


    Original     		PDF MX25L1673E PM1912

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


    Original     		PDF 78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3581D AT49BV320D AT49BV320DT SA70 AT49BV

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W19B320AT/B w19b320

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


    Original     		PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


    Original     		PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    PAXI

    Abstract: No abstract text available
    Text: High-Performance 8-Bit Microcontrollers Z8 Encore! XP F0830 Series Product Specification PS025107-1206 This publication is subject to replacement by a later edition. To determine whether a later edition exists, or to request copies of publications, visit www.zilog.com.


    Original     		PDF F0830 PS025107-1206 PAXI

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


    Original     		PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		PDF W28J320B/T 16/4M

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS320DM6446 www.ti.com SPRS283H – DECEMBER 2005 – REVISED SEPTEMBER 2010 TMS320DM6446 Digital Media System-on-Chip Check for Samples: TMS320DM6446 1 Digital Media System-on-Chip DMSoC 1.1 Features 12 • High-Performance Digital Media SoC – 513-, 594-, 810-MHz C64x+ Clock Rates


    Original     		PDF TMS320DM6446 SPRS283H 810-MHz 405-MHz ARM926EJ-Sâ 32-Bit TMS320C64x+ 32-/40-Bit)

    Untitled

    Abstract: No abstract text available
    Text: 10 la x x x x ] NOTES PULL OUT DIRECTION S f f iP R f f lW S lX X l S D H E a# psTau RE DETAILED DIMENSION, SEE SALES DRAWING. fflcEiSlm ° 1A00 jS /U —ID NUMBER OR CONNECTORS : 1A0DPCS/REEL u-K x-XK a lead tape len g th N x X X - X 3 S fS C X X X /X X O


    OCR Scan     		PDF 20PCS SD-500873-009 -02JA

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan     		PDF 50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30