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    1SS315 Search Results

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    1SS315 Price and Stock

    Toshiba America Electronic Components 1SS315[U-D]

    RF DIODE SCHOTTKY 5V USC
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    DigiKey 1SS315[U-D] Reel
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    Toshiba America Electronic Components 1SS315TPH3F

    RF DIODE SCHOTTKY 5V USC
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    DigiKey 1SS315TPH3F Reel 3,000
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    1SS315TPH3F Digi-Reel 1
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    1SS315TPH3F Cut Tape 1
    • 1 $0.35
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    Avnet Americas 1SS315TPH3F Reel 3,000
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    Mouser Electronics 1SS315TPH3F 34,812
    • 1 $0.36
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    E-Switch Inc PV8F2Y1SS-315

    SWITCH PB DPST-NO/NC 2A 48V
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    DigiKey PV8F2Y1SS-315 Bulk 20
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    Mouser Electronics PV8F2Y1SS-315
    • 1 $28.49
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    Newark PV8F2Y1SS-315 Bulk 20
    • 1 $30.06
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    Taiwan Semiconductor SS315 R6

    Schottky Diodes & Rectifiers 3A, 150V, Schottky Rectifier
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    Mouser Electronics SS315 R6 5,107
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    Taiwan Semiconductor SS315

    Schottky Diodes & Rectifiers 3A, 150V, Schottky Rectifier
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    Mouser Electronics SS315 2,331
    • 1 $0.51
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    1SS315 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS315 Kexin UHF Band Mixer Applications Original PDF
    1SS315 Toshiba shottky barrier diode Original PDF
    1SS315 TY Semiconductor UHF Band Mixer Applications - SOD-323 Original PDF
    1SS315 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS315 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS315 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SS315 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Scan PDF
    1SS315 Toshiba Schottky barrier diode for UHF band mixer applications Scan PDF
    1SS315TPH2 Toshiba 1SS315 - DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode Original PDF
    1SS315TPH3 Toshiba 1SS315 - DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode Original PDF
    1SS315TPH3F Toshiba 1SS315 - DIODE RF SWITCH 5V 20MA 1-1E1A Original PDF
    1SS315TPH4 Toshiba 1SS315 - DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode Original PDF
    1SS315TPHR2 Toshiba 1SS315 - DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode Original PDF
    1SS315TPHR3 Toshiba 1SS315 - DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode Original PDF
    1SS315TPHR4 Toshiba 1SS315 - DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode Original PDF
    1SS315[U/D] Toshiba America Electronic Components RF DIODE SCHOTTKY 5V USC Original PDF

    1SS315 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -55~125 °C Maximum (peak) reverse voltage


    Original
    PDF 1SS315

    TOSHIBA Semiconductor Reliability Handbook

    Abstract: 1SS315
    Text: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg −55~125


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    PDF 1SS315 TOSHIBA Semiconductor Reliability Handbook 1SS315

    "MARKING CODE ST"

    Abstract: 1SS315
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • UHF Band Mixer PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value


    Original
    PDF 1SS315 OD-323 OD-323 "MARKING CODE ST" 1SS315

    1SS315

    Abstract: No abstract text available
    Text: 1SS315 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS315 ○ UHF バンド受信ミキサ用 単位: mm 絶対最大定格 Ta = 25°C 項 せ ん 目 頭 順 逆 記 電 電 号 定 格 単位 圧 VRM 5 V 流 IF 30


    Original
    PDF 1SS315 1SS315

    1SS315

    Abstract: No abstract text available
    Text: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg −55~125 °C Maximum (peak) reverse voltage


    Original
    PDF 1SS315 1SS315

    SEMTECH MARKING

    Abstract: 1SS315 DIODE A Schottky SOD-323
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY PLANAR DIODE . PINNING DESCRIPTION PIN APPLICATIONS ˙UHF Band Mixer Applications 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25OC Characteristics


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    PDF 1SS315 OD-323 OD-323 SEMTECH MARKING 1SS315 DIODE A Schottky SOD-323

    forth

    Abstract: MARKING toshiba TOSHIBA DIODE 1SS315
    Text: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg −55~125 °C Maximum (peak) reverse voltage


    Original
    PDF 1SS315 forth MARKING toshiba TOSHIBA DIODE 1SS315

    Untitled

    Abstract: No abstract text available
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS. Unit in mm MAXIMUM RATINGS Ta=25oC CHARACTERISTIC SYMBOL RATING UNIT Maximum(Peak) Reverse Voltage VRM 5 V Forward Current IF 30 mA Junction Temperature Tj 125 oC JEDEC EIAJ Storage Temperature Range


    Original
    PDF 1SS315 04CB-000427

    1SS315

    Abstract: No abstract text available
    Text: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -55~125 °C Maximum (peak) reverse voltage


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    PDF 1SS315 1SS315

    st c 323 a

    Abstract: 1SS315 st diode marking code 724
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • UHF Band Mixer PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value


    Original
    PDF 1SS315 OD-323 OD-323 st c 323 a 1SS315 st diode marking code 724

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS315 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 2.6-0.1 1.0max 0.375 T yp M ax +0.05 0.1-0.02 0.475 A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym b o l M a xim u m P e a k R e v e rs e V o lta g e


    Original
    PDF 1SS315 OD-323

    SMD MARKING E 5

    Abstract: 1SS315
    Text: Diodes SMD Type UHF BAND MIXER APPLICATIONS 1SS315 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 2.6-0.1 1.0max 0.375 T yp M ax +0.05 0.1-0.02 0.475 A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r


    Original
    PDF 1SS315 OD-323 SMD MARKING E 5 1SS315

    1SS315

    Abstract: No abstract text available
    Text: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg −55~125


    Original
    PDF 1SS315 1SS315

    st marking code

    Abstract: 1SS315
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY PLANAR DIODE . PINNING DESCRIPTION PIN APPLICATIONS ˙UHF Band Mixer Applications 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25OC Characteristics


    Original
    PDF 1SS315 OD-323 OD-323 st marking code 1SS315

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature


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    PDF 1SS315

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm .1 . 2 +0.2 5 - 0. IL iM O -H in CM Nr— Nh i M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current


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    PDF 1SS315

    1SS315

    Abstract: No abstract text available
    Text: 1SS315 TO SH IBA TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature Storage Temperature Range


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    PDF 1SS315 1SS315

    marking S2

    Abstract: No abstract text available
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE UHF BAND M IXER APPLICATIONS. U n it in mm + 0.2 1. 2 5 - 0 . JÏ ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C T— SYMBOL Vr m If Tj Tsts RATING 5 30 125 -5 5 -1 2 5 UNIT V mA °C °C +0 1 0 . 3 -0 .0 5 0± 0.05


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    PDF 1SS315 marking S2

    1SS315

    Abstract: No abstract text available
    Text: TOSHIBA 1SS315 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 UHF BAND MIXER APPLICATIONS. U n i t in m m + 0.2 1.2 5 - 0 . il 0*tH ÖÖ i +I 0 ± 0.05 M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current


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    PDF 1SS315 1SS315

    1SS315

    Abstract: No abstract text available
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS. Unit in mm 0 ± 0.0 5 + 0.1 0 . 1 5 - 0 .0 6 MAXIMUM RATINGS Ta=25°C C H A RACTERISTIC SYMBOL Maximum(Peak) Reverse Voltage RATING VrM UNIT 5 V mA Forward Current if 30 Junction Temperature


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    PDF 1SS315 1SS315

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS315 TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE Unit in mm UHF BAND M IXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL


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    PDF 1SS315

    isv149

    Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229
    Text: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application


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    PDF ISV101 ISV102 ISV103 ISV147 ISV149 ISV225 ISV228 HN1V01H, HN1V02H, HN2V02H iss314 ISV262 ISV172 1SS242 ISV255 1SS239 ISV229

    1SV211

    Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
    Text: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245


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    PDF SC-59) SC-70) 3SK146 3SK153 2SC3828 2SC4214 SC4244 2SC3121 2SC3120 2SC3862 1SV211 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK275

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737