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    Toshiba America Electronic Components 1SS311-TE85L

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    Quest Components 1SS311-TE85L 4,236
    • 1 $0.856
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    • 1000 $0.2568
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    Toshiba America Electronic Components 1SS311(TE85L)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS311(TE85L) 387
    • 1 $0.9
    • 10 $0.9
    • 100 $0.405
    • 1000 $0.27
    • 10000 $0.27
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    1SS311 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS311 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS311 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS311 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS311 Toshiba Toshiba Shortform Catalog Scan PDF
    1SS311 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    1SS311 Toshiba DIODE Scan PDF
    1SS311TE85L Toshiba 1SS311 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS311TE85L2 Toshiba 1SS311 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS311TE85R Toshiba 1SS311 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS311TE85R2 Toshiba 1SS311 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS311 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Unit in mm Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance


    Original     		PDF 1SS311 SC-59 961001EAA2'

    1SS311

    Abstract: No abstract text available
    Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications l Low forward voltage : VF = 0.94V typ. l High voltage : VR = 400V (min) Unit: mm l Fast reverse recovery time : trr = 1.5ns (typ.) l Small total capacitance


    Original     		PDF 1SS311 SC-59 1SS311

    Untitled

    Abstract: No abstract text available
    Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications l Low forward voltage : VF = 0.94V typ. l High voltage : VR = 400V (min) Unit: mm l Fast reverse recovery time : trr = 1.5ns (typ.) l Small total capacitance


    Original     		PDF 1SS311 100mA

    1SS311

    Abstract: No abstract text available
    Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V typ. z High voltage : VR = 400V (min) Unit: mm z Fast reverse recovery time : trr = 1.5ns (typ.) z Small total capacitance


    Original     		PDF 1SS311 SC-59 1SS311

    1SS311

    Abstract: 13G1B
    Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance


    Original     		PDF 1SS311 SC-59 1SS311 13G1B

    1SS311

    Abstract: No abstract text available
    Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V typ. z High voltage : VR = 400V (min) Unit: mm z Fast reverse recovery time : trr = 1.5ns (typ.) z Small total capacitance


    Original     		PDF 1SS311 SC-59 1SS311

    1SS311

    Abstract: No abstract text available
    Text: 1SS311 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS311 ○ 高電圧スイッチング用 z z z z : : : : 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 外形が小さい。 単位: mm


    Original     		PDF 1SS311 SC-59 100mA 1SS311

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS311 1 SS31 1 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V : trr = 1.5/ j s


    OCR Scan     		PDF 1SS311 SC-59

    1SS311

    Abstract: No abstract text available
    Text: 1SS311 SILICON EPITAXIAL PLANAR TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm . L o w Forward Voltage VF=0.94V Typ. . High Voltage V r = 4 0 0 V ( M i n .) . Fast Reve r s e Recovery Time trr= l- 5*is(Typ.) . Small Total Capacitance C t = 3 •2 p F ( T y p .)


    OCR Scan     		PDF 1SS311 SC-59 100mA 1SS311

    SS31

    Abstract: No abstract text available
    Text: T O S H IB A 1SS311 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 1 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V


    OCR Scan     		PDF 1SS311 SC-59 961001EAA2' SS31

    marking AOO

    Abstract: 1SS31 1SS311
    Text: TOSHIBA 1SS311 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 1 Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package + 0.5 2.5 -0 .3 : Vp = 0.94V Typ.


    OCR Scan     		PDF 1SS31 1SS311 SC-59 961001EAA2' marking AOO 1SS311

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS311 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS311 WÊÊF • 9ÊÊF w ar m m Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package + 0.5


    OCR Scan     		PDF 1SS311 SC-59 961001EAA2'

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P