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    1N6640US Price and Stock

    MACOM JANTX1N6640US

    DIODE GEN PURP 50V 300MA D-5D
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    DigiKey JANTX1N6640US Bulk 181 1
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    Microchip Technology Inc 1N6640US

    DIODE GEN PURP 75V 300MA D-5D
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    DigiKey 1N6640US Bulk 172 1
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    Avnet Americas 1N6640US Bulk 23 Weeks 102
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    Mouser Electronics 1N6640US
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    Onlinecomponents.com 1N6640US
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    NAC 1N6640US 40
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    MACOM JANTXV1N6640US

    DIODE GEN PURP 50V 300MA D-5D
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    DigiKey JANTXV1N6640US Bulk 99 1
    • 1 $15.47
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    Microchip Technology Inc JANTX1N6640US

    DIODE GEN PURP 50V 300MA D-5D
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    DigiKey JANTX1N6640US Bulk 49 1
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    Mouser Electronics JANTX1N6640US 167
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    Microchip Technology Inc JANTX1N6640US 1,976 23 Weeks
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    NAC JANTX1N6640US 44
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    Master Electronics JANTX1N6640US
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    Microchip Technology Inc MNS1N6640US

    DIODE GEN PURP 50V 300MA D-5D
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    DigiKey MNS1N6640US Bulk 100
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    Microchip Technology Inc MNS1N6640US 60 23 Weeks
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    NAC MNS1N6640US 30
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    Master Electronics MNS1N6640US
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    1N6640US Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N6640US Compensated Devices SWITCHING DIODES Original PDF
    1N6640US Microsemi Signal or Computer Diode; Package: D; Original PDF
    1N6640US Microsemi 300 mA 75-100 V 4 ns Computer Switching Diode Original PDF

    1N6640US Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N6639US

    Abstract: 1N6640US 1N6641US
    Text: • 1N6639US THRU 1N6641US AVAILABLE IN JAN, PER MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US JANTX, JANTXV AND JANS • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original
    PDF 1N6639US 1N6641US MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US 08MIN. 070is IN6639US IN6641US 1N6640US

    Untitled

    Abstract: No abstract text available
    Text: • 1N6639US THRU 1N6641US AVAILABLE INJAN, PER MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US JANTX, JANTXV AND JANS • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original
    PDF 1N6639US 1N6641US MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US IN6639US IN6641US

    1N6640US JANTX

    Abstract: 1N6639US 1N6640US 1N6641US IN6639US 1N6641US JANTXV
    Text: 1N6639US 1N6640US 1N6641US 1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original
    PDF 1N6639US 1N6640US 1N6641US 1N6639US 1N6641US MIL-PRF-19500/609 08MIN. IN6639US IN6641US 1N6640US JANTX 1N6640US IN6639US 1N6641US JANTXV

    44907 thermistor

    Abstract: YSI 44907 thermistor ysi 44907 arathane 5750 JANSR2N7616UB
    Text: PD-97814 HIGH RELIABILITY RADIATION HARDENED QUAD OUTPUT DC-DC CONVERTER MAH-SERIES Nominal Voltage Input, Quad Output Description The MAH-Series of isolated DC-DC converters for space applications are low to medium power radiation hardened high reliability devices designed for hostile


    Original
    PDF PD-97814 EEE-INST002 DK-2740 44907 thermistor YSI 44907 thermistor ysi 44907 arathane 5750 JANSR2N7616UB

    1N6683

    Abstract: 1N6685 1N6685US 1N6684 1N6640US
    Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 6 February 1998 METRIC MIL-PRF-19500/625A 6 November 1997 SUPERSEDING MIL-S-19500/625 15 July 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING


    Original
    PDF MIL-PRF-19500/625A MIL-S-19500/625 1N6683, 1N6684, 1N6685, 1N6683US, 1N6684US, 1N6685US 1N6683 1N6685 1N6685US 1N6684 1N6640US

    1N6640US

    Abstract: 1N6641 1N6640 JANTX 1N6640US JANS 1N6639 JANTXV 1N4150 1N6639 1N6639US 1N6640 1N6641US
    Text: 1N6639 1N6640 1N6641 FEATURES • Available in axial leaded and surface mount configurations • Ultra Fast Reverse Recovery Time • Very low Capacitance • Metallurgically Bonded • Non-cavity glass package • Available as JANTX, JANTXV and JANS per MIL-S-19500/609


    Original
    PDF 1N6639 1N6640 1N6641 MIL-S-19500/609 1N4150 1N6639US 1N6640US 1N6640US 1N6641 1N6640 JANTX 1N6640US JANS 1N6639 JANTXV 1N6639 1N6639US 1N6640 1N6641US

    609g

    Abstract: 1N4150 metallurgically JANS1N4150UR-1 1N6640 1N6641 JANS1N6640US 1N6640US 1N6639 1N6639US 1N6641US
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 September 2010. MIL-PRF-19500/609G w/AMENDMENT 1 3 June 2010 SUPERSEDING MIL-PRF-19500/609G 8 July 2009 PERFORMANCE SPECIFICATION SHEET


    Original
    PDF MIL-PRF-19500/609G 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-PRF-19500. 609g 1N4150 metallurgically JANS1N4150UR-1 1N6640 1N6641 JANS1N6640US 1N6640US 1N6639 1N6639US 1N6641US

    1N6640US JANTXV

    Abstract: in6639us
    Text: •1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 >SWITCHING DIODES 1N6639US 1N6640US 1N6641US • NON-CAVITY GLASS PACKAGE ■METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    OCR Scan
    PDF 1N6639US 1N6641US MIL-PRF-19500/609 1N6640US 1N6641US IN6639US 1N6640US JANTXV

    1N6640US

    Abstract: No abstract text available
    Text: 1N6639US THRU 1N6641 US AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N6639US PER MIL-PRF-19500/609 1N6640US SWITCHING DIODES 1N6641US NON-CAVITY GLASS PACKAGE METALLURGiCALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    OCR Scan
    PDF 1N6639US 1N6641 MIL-PRF-19500/609 1N6640US 1N6641US IN6639US IN6641US

    003S5

    Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING


    OCR Scan
    PDF HIL-S-19500/609A MIL-S-19500/609 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-S-19500/231. 1N4150-1 003S5 ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US

    glass diode marking 2U

    Abstract: 37sn 1N6640US 6643U 2U 73 diode marking 2U diode 1N6641
    Text: H M mm Sania Ana, CA ic n o m s e m 1N6639 1N6640 1N6641 i FEATURES Available in axial leaded and surface mount configurations 300mAmp 75-100 Volts 4nsec Computer Switching Diode Ultra Fast Reverse Recovery Time Very low Capacitance Metallurgical^ Bonded Non-cavity glass package


    OCR Scan
    PDF MIL-S-19500/509 1N4150 1N6639 1N6640 1N6641 300mAmp 1N6639US 1N6640US glass diode marking 2U 37sn 6643U 2U 73 diode marking 2U diode 1N6641

    1N6641

    Abstract: No abstract text available
    Text: Micnosemi m m m Santa Ana, CA m 1N6639 1N6640 1N6641 FEATURES Available in axial leaded and surface mount configurations 300mAmp 75-100 Volts 4nsec Computer Switching Diode Ultra Fast Reverse Recovery Time Very low Capacitance Metallurgical^ Bonded Non-cavity glass package


    OCR Scan
    PDF 1N6639 1N6640 1N6641 300mAmp MIL-S-19500/609 1N4150 1N6639US 1N6640US 1N6641

    DO-213AA 1N4148

    Abstract: sem 5020 MLL4148-1 JANTXV1N4148UR-1 LT 7247 lt 7246 1N4148 DL-35 PACKAGE microsemi DL4448 JANTX1N4148
    Text: Signal/General Purpose Diodes Part Number JANTXV1N4454-1 JANTXV1N4454-1 JANTXV1N4454UR-1 ESA1N4150-1 ESA1N4151-1 BAS16 1N4148 1N4149 1N4446 1N4447 1N4448 1N4448 1N4449 1N914 OL4148 DL4448 DL914 A (B) MLL4148-1 MLL4454-1 MMBD4148 MMBD7000 MMBD914 JAN1N4148-1


    OCR Scan
    PDF DO-35 DO-213AA OT-23 DO-213AA 1N4148 sem 5020 MLL4148-1 JANTXV1N4148UR-1 LT 7247 lt 7246 1N4148 DL-35 PACKAGE microsemi DL4448 JANTX1N4148