Untitled
Abstract: No abstract text available
Text: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b OOrder codes e t e l
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M74HC09
DIP-14
SO-14
M74HC09
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Untitled
Abstract: No abstract text available
Text: SN74AUP1T58 SINGLE-SUPPLY VOLTAGE-LEVEL TRANSLATOR WITH NINE CONFIGURABLE GATE LOGIC FUNCTIONS www.ti.com SCES612D – OCTOBER 2004 – REVISED JUNE 2006 FEATURES • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Single-Supply Voltage Translator
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SN74AUP1T58
SCES612D
OT-23
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Untitled
Abstract: No abstract text available
Text: SN74AUP1T58 SINGLE-SUPPLY VOLTAGE-LEVEL TRANSLATOR WITH NINE CONFIGURABLE GATE LOGIC FUNCTIONS www.ti.com SCES612C – OCTOBER 2004 – REVISED DECEMBER 2005 FEATURES • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages
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SN74AUP1T58
SCES612C
OT-23
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Untitled
Abstract: No abstract text available
Text: SN74AUP1T98 SINGLE-SUPPLY VOLTAGE-LEVEL TRANSLATOR WITH NINE CONFIGURABLE GATE LOGIC FUNCTIONS www.ti.com SCES614C – OCTOBER 2004 – REVISED JUNE 2006 FEATURES • • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages
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SN74AUP1T98
SCES614C
OT-23
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marking b37a
Abstract: No abstract text available
Text: SO-8 single/dual OPA237 OPA2237 OPA4237 SSOP-16 quad SOT-23-5 single MSOP dual SINGLE-SUPPLY OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● MICRO-SIZE, MINIATURE PACKAGES Single: SOT-23-5, SO-8 Dual: MSOP-8, SO-8 Quad: SSOP-16
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SSOP-16
OT-23-5
OPA237
OPA2237
OPA4237
OT-23-5,
marking b37a
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DB-54008L-830
Abstract: 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L GRM426X7R104K50 PD54008
Text: DB-54008L-830 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 800 - 830MHz ■ Supply voltage: 7.2V ■ Output power: 7W ■ Power gain: 7.9 ± 0.3dB ■ Efficiency: 56% - 59%
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DB-54008L-830
PD54008L
830MHz
DB-54008L-830
3214W-1-103E
EEVHB1V100P
EXCELDRC35C
GRM42-6C0G102J50
PD54008L
GRM426X7R104K50
PD54008
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PD54008L
Abstract: PD54008L-E DB-54008L-470 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50
Text: DB-54008L-470 Evaluation board using PD54008L-E for 2-way UHF radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 12.0 ± 1.0 dB ■ Efficiency: 56 % - 68 % ■ Load mismatch: 20:1
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DB-54008L-470
PD54008L-E
DB-54008L-470
PD54008L-E,
PD54008L
EEVHB1V100P
EXCELDRC35C
GRM42-6C0G102J50
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smd u2.8
Abstract: in4148 0805 RS738 in4148 smd ST205x 1E 5W BC557 in smd package LM238 SMD LD3 bc558 SMD
Text: UM0242 User manual USB Power Switch demonstrator kit Introduction The objective of this demonstrator is to display to the user the features and capabilities of the USB Power switches ST204x and ST205x developed by STMicroelectronics using a Windows -based host software application and one of several USB low-speed
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UM0242
ST204x
ST205x)
smd u2.8
in4148 0805
RS738
in4148 smd
ST205x
1E 5W
BC557 in smd package
LM238
SMD LD3
bc558 SMD
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st 393
Abstract: BUL805 JESD97
Text: BUL805 High voltage fast-switching NPN Power Transistor Preliminary Data General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed
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BUL805
2002/93/EC
O-220
st 393
BUL805
JESD97
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Untitled
Abstract: No abstract text available
Text: OPA685 OPA 685 OPA 685 For most current data sheet and other product information, visit www.burr-brown.com Ultra-Wideband, Current-Feedback OPERATIONAL AMPLIFIER With Disable TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ●
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OPA685
900MHz)
420MHz)
40dBm
50MHz)
129mW
OPA685
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tms320f2812 adc
Abstract: No abstract text available
Text: TMS320R2811, TMS320R2812 Digital Signal Processors Data Manual Literature Number: SPRS257B June 2004 − Revised Febrtuary 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production
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TMS320R2811,
TMS320R2812
SPRS257B
MS-026
S-PQFP-G176)
MO-136
tms320f2812 adc
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G17-EP www.ti.com SGLS336 – APRIL 2006 SINGLE SCHMITT-TRIGGER BUFFER FEATURES • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing
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SN74LVC1G17-EP
SGLS336
24-mA
000-V
A114-A)
A115-A)
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Untitled
Abstract: No abstract text available
Text: bq2058 Lithium Ion Pack Supervisor for 3- and 4-Cell Packs Features General Description ➤ Protects and individually monitors three or four Li-Ion series cells for overvoltage, undervoltage The bq2058 Lithium Ion Pack Supervisor is designed to control the charge
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bq2058
bq2058
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 1 20 REVISIONS ALL RIGHTS RESERVED. BY - 20 2 3 P LTR DESCRIPTION K ECO-13-012991 DWN APVD JM 14AUG2013 TE 6 1 D DATE 2 7 11 5 9 1 D 10 1 I.D. TAG TE INSTRUCTION SHEETS AND MANUFACTURER'S
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ECO-13-012991
14AUG2013
19MAY2006
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BUL805
Abstract: JESD97
Text: BUL805 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Description 3 The device is manufactured using high voltage
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BUL805
O-220
BUL805
JESD97
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MCS7820CV
Abstract: MCS7820 MCS7820-EVB DM 7820 AN-7820 6B000000 16c450 rs485 8H10
Text: MCS7820 USB-2.0 to Two Serial Ports Features • USB-2.0 Device Controller • On-Chip USB-2.0 PHY • On-Chip Voltage Regulators • Two 16c450/16c550 compatible UARTs • Supports SIR IrDA Mode on any/all ports • Supports RS-232, RS-485 and RS-422 Serial Ports
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MCS7820
16c450/16c550
RS-232,
RS-485
RS-422
512-Byte
28-Aug-2006
16-Sept-2006
5-August-2007
MCS7820CV
MCS7820
MCS7820-EVB
DM 7820
AN-7820
6B000000
16c450 rs485
8H10
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Untitled
Abstract: No abstract text available
Text: SN74AUP1T98 SINGLE-SUPPLY VOLTAGE-LEVEL TRANSLATOR WITH NINE CONFIGURABLE GATE LOGIC FUNCTIONS www.ti.com SCES614B – OCTOBER 2004 – REVISED DECEMBER 2005 FEATURES • • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages
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SN74AUP1T98
SCES614B
OT-23
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STU6N62K3
Abstract: 4.7 B1 zener diode 6N62K3 isd 2100 6n62 6N62K
Text: STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages Datasheet − production data Features Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3
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STF6N62K3,
STFI6N62K3,
STI6N62K3,
STP6N62K3,
STU6N62K3
O-220FP,
O-220,
STF6N62K3
STFI6N62K3
STI6N62K3
STU6N62K3
4.7 B1 zener diode
6N62K3
isd 2100
6n62
6N62K
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diode zener 7.2v
Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E DB-54008L-470 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L H3460
Text: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%
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DB-54008L-470
PD54008L
470MHz
DB-54008L-470
diode zener 7.2v
rf power amplifier circuit by 400-470mhz
3214W-1-103E
EEVHB1V100P
EXCELDRC35C
GRM42-6C0G102J50
PD54008L
H3460
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JESD97
Abstract: M74HC09 M74HC09B1R M74HC09M1R M74HC09RM13TR TSSOP14
Text: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ■ Low power dissipation: ICC = 1µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) DIP-14 ■ Balanced propagation delays: tPLH ≅ tPHL
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M74HC09
DIP-14
SO-14
M74HC09
JESD97
M74HC09B1R
M74HC09M1R
M74HC09RM13TR
TSSOP14
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sil 9024
Abstract: sil 9002 2418E SP3485EN-L 144971 6724E sp3485e 1682e 891045E 7860E
Text: Product Characterization Report for the SP3485 Family of Products Revision 2 Prepared By: Velvet Doung & Greg West Date: Aug 16, 2006 SP3485 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure Data Summary for Key Parameters
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SP3485
SP3485
char33E-03
000E-03
418E-03
000E-03
276E-03
sil 9024
sil 9002
2418E
SP3485EN-L
144971
6724E
sp3485e
1682e
891045E
7860E
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STP75N20
Abstract: W75N20 P75N20 JESD97 STB75N20 STB75N20T4 STW75N20
Text: STB75N20 STP75N20 - STW75N20 N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STB75N20 200V <0.034Ω 75A 3 1 STP75N20 200V <0.034Ω 75A STW75N20 200V <0.034Ω 75A •
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STB75N20
STP75N20
STW75N20
O-220
O-247
STP75N20
O-220
W75N20
P75N20
JESD97
STB75N20
STB75N20T4
STW75N20
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165nH
Abstract: No abstract text available
Text: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%
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DB-54008L-470
PD54008L
470MHz
DB-54008L-470
165nH
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BUL805
Abstract: JESD97
Text: BUL805 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Description 3 The device is manufactured using high voltage
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BUL805
O-220
BUL805
JESD97
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