Untitled
Abstract: No abstract text available
Text: DBM-186 DBM-186 Wideband Double Balanced Microwave Mixer 10MHz to 4000MHz DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers and eight matched Schottky diodes
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DBM-186
10MHz
4000MHz
DBM-186
QQ-N-290,
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VARI-L
Abstract: vari-l dbm 107D DBM-186 varil OQ-N-290
Text: DBM-186 T0.8 Packaged Wideband Double Balanced Microwave Mixer 10-4000 MHz DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a T0-8 package. Five unique transformers and eight matched Schottky diodes
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DBM-186
DBM-186
-10dBm
OQ-N-290,
Nickel200
B162-58T
11101East
VARI-L
vari-l dbm
107D
varil
OQ-N-290
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XC2064
Abstract: xc2064-70pc44c x5397 XC2000 XC2018 XC3020 XC4000 XC4002A xc206470pc44c x5399
Text: XC2000 Logic Cell Array Families Table of Contents Overview . 2-186 XC2000 Logic Cell Array Families . 2-187 Architecture . 2-187
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XC2000
XC2018
XC2064
TQ100
VQ100
XC2064L
XC2018L
Mil-STD-883C
X6120
XC2064
xc2064-70pc44c
x5397
XC2018
XC3020
XC4000
XC4002A
xc206470pc44c
x5399
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Untitled
Abstract: No abstract text available
Text: MA46601-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.400f C1/C2 Min. Capacitance Ratio2.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.7.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E
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MA46601-186
Voltage30
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Untitled
Abstract: No abstract text available
Text: MA46607-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio3.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.5.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E
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MA46607-186
Voltage30
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Untitled
Abstract: No abstract text available
Text: MA46614-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.4.3k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E
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MA46614-186
Voltage45
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Untitled
Abstract: No abstract text available
Text: MA46603-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.6.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E
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MA46603-186
Voltage30
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sp723ab
Abstract: No abstract text available
Text: 5 Next Silicon Protection Circuits Product Number Description TVS Protection with Filter and Termination Packaging Page SPUSB1AJT Upstream USB Port Terminator with ESD Suppression & EMI Filtering R1 = 15 ohms Surface Mount SC70-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186-188
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SC70-6)
DO-214AA)
sp723ab
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Untitled
Abstract: No abstract text available
Text: MA46610-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.6.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E
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MA46610-186
Voltage45
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107D
Abstract: 204C 213B DBM-186
Text: DBM-186 TO-8 Packaged Wideband Double Balanced Microwave zsw enm fcr m tm m ts DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers and eight matched Schottky diodes
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DBM-186
M000m^
10dBm
MIL-STD-202E
F-15-68,
MIL-STD-1276,
B162-58T
107D
204C
213B
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107D
Abstract: 204C 213B DBM-186
Text: DBM-186 TO-8 Packaged Wideband Double Balanced Microwave m Q ID tm a dintmn fcrfjiieuoflfiijcfs DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers
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DBM-186
M000m^
10dBm
MIL-STD-202E.
MIL-STD-202E
F-15-68,
MIL-STD-1276,
B162-58T
107D
204C
213B
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Untitled
Abstract: No abstract text available
Text: PBYR2535CTF PBYR2540CTF PBYR2545CTF SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. Their electrical
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PBYR2535CTF
PBYR2540CTF
PBYR2545CTF
OT-186
M2284
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AX57
Abstract: No abstract text available
Text: PBYR735F PBYR740F PBYR745F SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. Their electrical isolation makes
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PBYR735F
PBYR740F
PBYR745F
OT-186
M2284
AX57
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Untitled
Abstract: No abstract text available
Text: PBYR1035F PBYR1040F PBYR1045F SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. Their electrical isolation makes
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PBYR1035F
PBYR1040F
PBYR1045F
OT-186
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BU506DF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT 186 package. The BU506DF has an integrated efficiency diode. o APPLICATIONS • Horizontal deflection circuits of
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BU506DF
BU506F;
BU506DF
BU506F.
BU506DF.
OT186)
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Untitled
Abstract: No abstract text available
Text: _u _ N AUER PHILIPS/DISCRETE • ObE D bbS3T31 00113bl T ■ BYV33F SERIES T-03-19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,
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bbS3T31
00113bl
BYV33F
T-03-19
OT-186
bb53T31
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1645f
Abstract: PBYR1635F 1640F
Text: PBYR1635F PBYR1640F PBYR1645F SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum -barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. T heir electrical isolation makes
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PBYR1635F
PBYR1640F
PBYR1645F
OT-186
1645f
1640F
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204OCT
Abstract: No abstract text available
Text: PBYR2035CTF PBYR2040CTF PBYR2045CTF SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum -barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forw ard voltage drop, low capacitance and absence o f stored charge. T heir electrical
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PBYR2035CTF
PBYR2040CTF
PBYR2045CTF
OT-186
204OCT
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BYV33F
Abstract: BYV33F-40A BYV33F-35 M0810
Text: _u_ N AMER PHILIPS/DISCRETE OLE D • 1^53131 Ü0113bl T BYV33F S E R IE S T-03-19 ' SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,
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0113bl
BYV33F
T-03-19
OT-186
0113btÃ
M0795
M2844
10-Fig.
BYV33F-40A
BYV33F-35
M0810
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Untitled
Abstract: No abstract text available
Text: BYV32F SERIES T - 0 3 - 1 7 y V. PHILIPS INTERNATIONAL SbE ]> 7110ô2ti 00413bfl âlfl • PHIN ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic
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BYV32F
00413bfl
OT-186
711005b
7110fl2b
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14.3f
Abstract: No abstract text available
Text: BYV143F SERIES y v. SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Low-leakage platinum -barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. Their electrical
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BYV143F
OT-186
14.3f
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TA317
Abstract: M3142 Ultra Fast Recovery Double Rectifier Diodes BYQ28F BYQ28F-50
Text: SbE D • 711002b □ □ m S I D DID ■ PHIN BYQ28F SERIES 1 PHILIPS INTERNATIONAL T - 0 3 - 1 7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic
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711002b
0D41210
BYQ28F
T-03-17
OT-186
7110flsb
M2350
7110fl2b
TA317
M3142
Ultra Fast Recovery Double Rectifier Diodes
BYQ28F-50
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BYW29F
Abstract: No abstract text available
Text: 25E D N AMER PH ILIPS/DISCRETE • ^53131 002274*1 3 ■ X ' BYW29F SERIES 7 3 0 3 - /7 ULTRA FAST RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in S O T -186 full-pack envelopes, featuring
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BYW29F
inSOT-186
BYW29F-
Re2838
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Z188
Abstract: 2U 26 diode TF 450
Text: SIEMENS 8INQLE LG Z181 LG Z182-186 LG Z188,180 2 to 6 DIODE ARRAYS 8,10 DIODE ARRAYS Green Miniature LED Lamp Package Dimensions in inches mm .094 (2.4) .083 (2.1) , .112(2.84) FEATURES * Green Diffused Lens * Miniature Size * 0.100" (2.54 mm) Lead Spacing
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Z182-186
181-C
182-C
183-C
184-CO
185-C
186-C
188-C
Z180-C
Z188
2U 26 diode
TF 450
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