CI 576
Abstract: No abstract text available
Text: VG26 V 18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
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18165C
42-pin
400mil
50/60ns
1G5-0179
CI 576
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
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18165C/VG26
18165D
42-pin
400mil
50/60ns
1G5-0179
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
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18165C
42-pin
400mil
50/60ns
1G5-0179
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
1G5-0158
18165CJ-5
18165CJ-6
400mil
18165CJ-5
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
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18165C/VG26
18165D
42-pin
400mil
50/60ns
1G5-0179
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18165CJ
Abstract: No abstract text available
Text: VIS VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
1G5-0158
18165CJ
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MAS 10 RCD
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
1G5-0147
18165CJ-5
400mil
42-Pin
18165CJ-6
MAS 10 RCD
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
1G5-0158
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Untitled
Abstract: No abstract text available
Text: 世界先進積體電路股份有限公司 Vanguard International Semiconductor Corp. Rev 1 2 Date 12/06/2000 06/01/2001 ECN 1G5-0179 901190 From 黃志凱 曾毓琳 3 10/19/2001 902563 曾毓琳 4 12/19/2002 20022298 曾毓琳 黃志凱 Origination Dept. Manager: 1313 陳瑛政
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1G5-0179
VA6087
1Mx16
18165D
600uA
130mA
550uA
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576x16-B it CMOS Dynamic RAM VIS Description The device C M O S D ynam ic RAM organized as 1,048,576 w o rd s x 16 bits w ith extended d ata out access m ode. It is fa bricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single
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18165C
576x16-B
42-pin
50/60ns
G5-0147
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1 ,0 4 8 ,5 7 6 x 1 6 -Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
G5-0158
age26
18165CJ-5
400mil
42-Pin
18165CJ-6
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TC51V18165
Abstract: TC51V18165CFT
Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC51V18165 C J/C FT - 60 SILICON GATE CMOS DATA TENTATIVE DATA 1,048,576 W O RD x 16 BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The 18165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,048,576 words by 16 bits.
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TC51V18165
TC51V18165CJ/CFT
TC51V18165CJ/CFT--31
TC51V18165CJ/CFT--
TC51V18165CFT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 18165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The 18165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The 18165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as
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TC51V18165CJ/CFT-50
576-WORD
16-BIT
TC51V18165CJ/CFT
42-pin
50-pin
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aar tssop 8
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE MH2M645CXPJ-6,-7 HYPER PAGE MODE 134217728-BIT (2097152-WORD BY 64-BIT) DYNAMIC RAM DESCRIPTION The M H 2M 645C XPJ is 2 0 9 7 1 52 w ord x 6 4 -b it dynamic RAM module. This consists o f eight industry standard 1M x 16 dynamic RAMs in SOJ and three industry standard
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MH2M645CXPJ-6
134217728-BIT
2097152-WORD
64-BIT)
645CXPJ-6
645CXPJ-7
MH2M645CXPJ-7
aar tssop 8
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M5M4V18165
Abstract: No abstract text available
Text: MITSUBISHI LSlS c. .wuNPvRV M5 M4 V1 8 1 6 5 C T P -5 ,-6 ,-7 , -5 S ,-6 S ,-7 S HYPER PAGE M O DE 16777216-B IT 1048576-W Q R D B Y 16-B IT DYNAM IC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal
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16777216-B
048576-W
1048576-word
16-bit
M5M4V18165CTP-5
16777216-BIT
16-BIT)
M5M4V18165
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