Untitled
Abstract: No abstract text available
Text: OPA380 OPA2380 SBOS291E − NOVEMBER 2003 − REVISED NOVEMBER 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)
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OPA380
OPA2380
SBOS291E
90MHz
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DO3316P-103
Abstract: capacitor 103 .01uf sanyo ceramic capacitor, .1uF MBRS540 vishay cap datasheet capacitor 0.1uf VJ0805Y104KXXA MBRS320 ceramic capacitor 0.01uf
Text: N Altera Cyclone Complete Reference Design Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 D1 D2 L1 L2 P1 P2 P3 R1 R2 U U1 Part Type 16MV470WG 16MV470WG 0.1uF 0.1uF 0.1uF 4MB560EXR 4MB560EXR 16MV470WG 0.1uF 10nF 0.01uF 6MB390EXR MBRS540 MBRS320 DO5022-562
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16MV470WG
4MB560EXR
6MB390EXR
MBRS540
MBRS320
DO5022-562
DO3316P-103
DO3316P-103
capacitor 103 .01uf
sanyo
ceramic capacitor, .1uF
MBRS540
vishay cap datasheet
capacitor 0.1uf
VJ0805Y104KXXA
MBRS320
ceramic capacitor 0.01uf
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A3 SOT223
Abstract: i-pak Package zener diode
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
O-92/IPAK/SOT-223
A3 SOT223
i-pak Package zener diode
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verilog code hamming
Abstract: c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code
Text: AN1823 APPLICATION NOTE Error Correction Code in Single Level Cell NAND Flash Memories This Application Note describes how to implement an Error Correction Code ECC in ST Single Level Cell (SLC) NAND Flash memories, that can detect 2-bit errors and correct 1-bit errors per 256 or 512 Bytes.
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AN1823
Byte/1056
verilog code hamming
c1823.zip
an1823
hamming code 512 bytes
SLC nand hamming code 512 bytes
flash hamming ecc
STMicroelectronics NAND256W3A
hamming
7 bit hamming code
error correction code
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7900f-d
Abstract: No abstract text available
Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36LLR8860T1,
M36LLR8860D1
M36LLR8860M1,
M36LLR8860B1
M36LLR8860T1:
880Dh
M36LLR8860D1:
880Eh
7900f-d
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i-pak Package zener diode
Abstract: STN1NK60Z stn1nk60
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
O-92/IPAK/SOT-223
i-pak Package zener diode
STN1NK60Z
stn1nk60
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1NK60Z
Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
OT-223
STQ1NK60ZR
1NK60Z
STN1NK60Z
1Nk60
JESD97
STD1LNK60Z-1
STQ1NK60ZR-AP
mosfet 600V 100A ST
std1lnk60z
Marking STMicroelectronics zener diode
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C6426
Abstract: C6419 c6492 Inventec C6384 STV 5v sense DG board C6782 D1047 C6464 powerpad_4a
Text: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-8 - DOTHAN PROCESSOR 9-13 - ALVISO 14-17 - DDR 18-20 - ATI_M24_P 21-22 - VGA DDR 23-27- ICH6-M 28 -LCD INTERFACE 29 - HDD CONNECTOR 30 - CD-ROM CONNECTOR
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R6970
R6971
C2507
C2505
R2502
R2509
127107MH020G200ZT
FIX2501
FIX2502
FIX2500
C6426
C6419
c6492
Inventec
C6384
STV 5v sense DG board
C6782
D1047
C6464
powerpad_4a
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1Nk60
Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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STD1LNK60Z-1
STQ1NK60ZR-AP
STN1NK60Z
O-251
OT-223
STQ1NK60ZR-AP
1Nk60
1NK60Z
1nk60zr
JESD97
STD1LNK60Z-1
STN1NK60Z
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M30L0R8000T
Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36LLR8860T1,
M36LLR8860D1
M36LLR8860M1,
M36LLR8860B1
M36LLR8860T1:
880Dh
M36LLR8860D1:
880Eh
M30L0R8000T
RAM 2112 256 word
J-STD-020B
M30L0R8000B0
M30L0R8000T0
M36LLR8860D1
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Untitled
Abstract: No abstract text available
Text: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223
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STN1NK60Z,
STQ1NK60ZR-AP
OT-223
STN1NK60Z
OT-223
AM01476v1
DocID9509
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ceramic capacitor, .1uF
Abstract: X5R CAPACITOR TDK C2012X5R0J106 capacitor 0.47uf C2012X5R0J106 tdk c2 sot23 ceramic capacitor, 1uF CRCW08051004F
Text: N Altera MAX II-G Complete Reference Design 5V in; 1.8V @ 120mA out Vccint and 3.3V @ 150mA (Vccio) Designator Part Type Manufacturer Part No Description C1 C2 C3 C4 C5 C6 P1 P2 P3 R1 R2 U1 U2 TDK C2012X5R0J106 TDK C2012X5R0J106 TDK C2012X5R1C105 TDK C2012X5R1C105
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120mA
150mA
C2012X5R0J106
C2012X5R1C105
C2012X7R1E474
LM2798-1
ceramic capacitor, .1uF
X5R CAPACITOR TDK
C2012X5R0J106
capacitor 0.47uf
C2012X5R0J106 tdk
c2 sot23
ceramic capacitor, 1uF
CRCW08051004F
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M665-02
Abstract: M66501
Text: Preliminary Information Integrated Circuit Systems, Inc. M665 DUAL SAW, SELECTABLE FREQUENCY VCSO FEATURES ◆ Two integrated SAW devices and selectable output frequency; supports multi-rate optical interfaces nFOUT FOUT 6 5 4 M665 M660 1 2 3 GND Top View
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M665-01
M665-02
17Nov2004
M66501
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CTS742
Abstract: SMD 47UF/SN74AHC138
Text: User's Guide SLAU087A – July 2002 – Revised December 2004 ADS8323EVM This user's guide describes the characteristics, operation, and use of the ADS8323 16-bit, 500-kHz, parallel analog-to-digital converter evaluation board. A complete circuit description, a schematic diagram, and bill of materials are included.
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SLAU087A
ADS8323EVM
ADS8323
16-bit,
500-kHz,
CTS742
SMD 47UF/SN74AHC138
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STD1LNK60Z-1
Abstract: STN1NK60Z STQ1NK60ZR STQ1NK60ZR-AP
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
O-92/IPAK/SOT-223
STQ1NK60ZR
STD1LNK60Z-1
STN1NK60Z
STQ1NK60ZR-AP
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capacitor 103 .01uf
Abstract: ceramic capacitor 103 ceramic capacitor, .1uF ceramic capacitor, .10nf 0.1uF Capacitor Ceramic VJ0805Y104KXXA DO1813P-103 103 capacitor ceramic capacitor 10k DO1813P
Text: N Altera Cyclone Complete Reference Design 5V in; 1.5V @ 1.5A out Vccint and 2.5V @ 600mA (Vccio) Designator Part Type Manufacturer Part No Description C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 L1 L2 P1 P2 P3 R1 R2 R3 R4 R5 U1 U2 SANYO 6MB390EXR VISHAY VJ0805Y104KXXA
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600mA
6MB390EXR
VJ0805Y104KXXA
VJ0805Y103KXXA
C2012X5R1C105
VJ0805Y272KXXA
capacitor 103 .01uf
ceramic capacitor 103
ceramic capacitor, .1uF
ceramic capacitor, .10nf
0.1uF Capacitor Ceramic
VJ0805Y104KXXA
DO1813P-103
103 capacitor
ceramic capacitor 10k
DO1813P
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ST 9509
Abstract: 1NK60Z 9509 STQ1NK60ZR-AP 1nk60 Power MOSFET SOT-223 STN1NK60Z 1nk60zr A1 SOT-223 MOSFET
Text: STN1NK60Z STQ1NK60ZR-AP N-channel 600 V, 13 Ω, 0.8 A TO-92, SOT-223 Zener-protected SuperMESH Power MOSFET Features Order codes STQ1NK60ZR-AP STN1NK60Z VDSS RDS on ID 600 V < 15 Ω 0.3 A • 100% avalanche tested ■ Extremely high dv/dt capability ■
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STN1NK60Z
STQ1NK60ZR-AP
OT-223
ST 9509
1NK60Z
9509
STQ1NK60ZR-AP
1nk60
Power MOSFET SOT-223
STN1NK60Z
1nk60zr
A1 SOT-223 MOSFET
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stv 4326
Abstract: Inventec KNOCKHILL 10 inventec knockhill 10a CV136 AD30/stv 4326 ACDL B1413-1 ati sb400 FDS6900S
Text: KNOCKHILL 10A PreMP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 10A SIZE CODE A3 REV DOC. NUMBER X01 CS SHEET 1 OF 50 TABLE OF CONTENTS PAGE
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CN3000
AF312K
SW3000
A106T
SW3001
A106T
CN3001
AF306K
FIX4023
FIX4021
stv 4326
Inventec
KNOCKHILL 10
inventec knockhill 10a
CV136
AD30/stv 4326
ACDL
B1413-1
ati sb400
FDS6900S
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BAT54
Abstract: RC410M BAT54C3 27b4 INVENTEC SP8K10SFD5_ROHM ATI SB450 KNOCKHILL 10 12ah3 P19E-6
Text: San Antonio 10E PreMP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 10A SIZE CODE A3 DOC. NUMBER REV X01 CS SHEET 1 OF 50 TABLE OF CONTENTS PAGE
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6-Aug-2005
D2000
CN2000
SW2001
A106T
SW2000
A106T
FIX14
FIX10
FIX11
BAT54
RC410M
BAT54C3
27b4
INVENTEC
SP8K10SFD5_ROHM
ATI SB450
KNOCKHILL 10
12ah3
P19E-6
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Untitled
Abstract: No abstract text available
Text: STN1NK60Z STQ1NK60ZR-AP N-channel 600 V, 13 Ω, 0.8 A TO-92, SOT-223 Zener-protected SuperMESH Power MOSFET Features Order codes STQ1NK60ZR-AP STN1NK60Z VDSS RDS on ID 600 V < 15 Ω 0.3 A • 100% avalanche tested ■ Extremely high dv/dt capability ■
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STN1NK60Z
STQ1NK60ZR-AP
OT-223
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ceramic capacitor, .1uF
Abstract: 0.1uF Capacitor Ceramic capacitor 22uf X7R TDK 33uf capacitor ceramic 0.33uf TDK X7R 25v X5R CAPACITOR TDK capacitor 0.33uf
Text: N Altera MAX II Complete Reference Design Designator C1 C2 C3 C4 C5 C6 C7 C8 P1 P2 U1 Part Type 1uF 0.33uF 0.33uF 0.33uF 22uF 0.1uF 22uF 22uF 5V [email protected] LM3352-2.5 5V in; 2.5V @ 200mA out Vccint & Vccio Manufacturer Part No TDK C2012X5R1C105 TDK C2012X7R1H334
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LM3352-2
200mA
C2012X5R1C105
C2012X7R1H334
C2012X5R0J226
ceramic capacitor, .1uF
0.1uF Capacitor Ceramic
capacitor 22uf
X7R TDK
33uf
capacitor ceramic
0.33uf
TDK X7R 25v
X5R CAPACITOR TDK
capacitor 0.33uf
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JESD97
Abstract: STD1LNK60Z-1 STN1NK60Z STQ1NK60ZR-AP
Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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STD1LNK60Z-1
STQ1NK60ZR-AP
STN1NK60Z
O-251
OT-223
STQ1NK60ZR-AP
JESD97
STD1LNK60Z-1
STN1NK60Z
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 — »— RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ DIST REVISIONS 16 LTR DESCRIPTION OWN DATE EC PER OS1 4 - 0 1 9 2 - 0 4 17NOV2004 APVD JGH JL D D C 1\ FEMALE ZINC
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17NOV2004
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - - ALL RIGHTS RESERVED. D C c B .0 2 4 + .0 0 1 A AMP 1471-9 REV 31MAR2000 2 1 LOC DIST AF 50 R E V IS IO N S LTR DESCRIPTION C REVISED PER 1 CONTINUOUS
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0G3A-0923-04
30NOV04
17NOV2004
30NOV2004
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