BY 268 V
Abstract: 214213 BY268
Text: E G CORP □ □2=14213 □ □ m T t.T 3 • 17E D BY 268 •BY 269 ’Ü’IWIiFtyiKKIIKl electronic Creative Technologies r-0 3-u Silicon Mesa Diodes Applications: High voltage rectifier Features: • Hermetically sealed package • Glass passivated junction
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flthJASl10K/W
ri-25Â
BY 268 V
214213
BY268
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tlh41
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D W • fl'JHQDSb QOQÖTMfl S ■ ALGG T ill TTIUiiFMKiM! electronic 41 «■-«*. -t . . . I CrwlivtTtehrtotogies \ High Efficiency LEDs 0 3 mm T-1 in untinted nondiffused packages Color Type Technology High efficiency rad T LH R 4 1 .
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GG0flS53
tlh41
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by448
Abstract: No abstract text available
Text: A £ G CORP 17E D 002T45Ì3 QGQT773 S • BY 448 •BY 458 TTSILIipililiKjKliifl electronic Creative Technologies 7- o b i s ' Silicon M esa Diodes A p p lica tio n : High voltage rectifier Features: • Hermetically sealed package • Glass passivated junction
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002mat
0G0T773
100-pA
fithJAs100K/W
by448
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Telefunken U 2097
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E T> • fi^EOO^b OOOfl^aO 1 ■ ALGG TLH.51. TTlimiFIMIKKiO electronic C m live tiKhootogtes High Efficiency LEDs 0 5 mm T-1% in untinted nondiffused packages Color Type Technology High efficiency.red T L H R 5 1 . GaAsPon GaP
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TLHY51
Telefunken U 2097
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • fl^EQD^b OQCnODM TLH. 56. • TLH. 66. in L[fiFM[r£[iß3 electronic _ T - W - Z l Crfitfvelectaotog'M High Efficiency LEDs 0 5 mm (T-1% in tinted total diffused packages Color Type High efficiency red Yellow
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TLHR56.
TLHR66.
TLHG66.
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mil-std-202e
Abstract: KDO-150 E17E
Text: K D 1/ T R I A N G L E 17E D • 5041505 0001134 7 DIELECTRIC RESONATOR ■SO'O^ OSCILLATORS KDO SERIES HIGH PERFORMANCE 8-18 GHz MODEL NO. KDO-150 FEATURES: • Hermetically Sealed • Drop-In Package Removable SMA • MIL-STD-883 • Integral Amplifiers
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KDO-150
MIL-STD-883
38POWER
MIL-STD-202E,
MIL-C-39012
MIL-C-22750
mil-std-202e
E17E
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by 228 v
Abstract: by228 AEG 972 ir 0588
Text: A E e CORP 17E D 0Q2T42fe> Q [ ] C H 7 f a 7 T • BY 228/13 •BY 228/15 ¥ 1 ÌL1 P0J IK1K 1 K1electronic Creative Technologies T-Ol-iS' Silicon Mesa Diodes Application: High voltage rectifier Features: • G lass passivated junction Hermetically sealed package
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S13BT
by 228 v
by228
AEG 972
ir 0588
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GE DIODE
Abstract: 1501a DIODE T03 CD10 "electrical connector" nks3ned1-27.0000-20t
Text: OPTO-ELECTRONICS INC bfi0502T 000020t. H 17E D COMPONENT DETECTORS CD SERIES ^ IT2q t - 4 5 i DESCRIPTION The CD series detectors are designed for require ments less stringent than those met by the ultra high speed detector instruments and are an ideal choice
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000020t.
500x500
250x250
15DIA.
GE DIODE
1501a
DIODE T03
CD10
"electrical connector"
nks3ned1-27.0000-20t
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BB304
Abstract: 0588 ir 0588 CD11
Text: A E G CORP 17E D • G0ST45b OOQTTST Q BB 304 TilLK p yiiiK lK l electronic Creativa Technolog es Silicon Epitaxial Planar Dual Capacitance Diodes A pplications: Tuning separate resonant circuits, push-pull circuits in F M range especially for car-radios Features:
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002T45b
r-07-i?
BB304
0588
ir 0588
CD11
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K476
Abstract: BUK476 BUK476-1000B 3909 transistor BU 608
Text: PHILIPS INTERNATIONAL SbE D m 711002b □DMMbb'i 17e! BiPHIN Philips Components Data sheet status Preliminary specification date of issue March 1991 B U K 4 7 6 - 1O O O A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N -channel enhancem ent mode
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BUK446-1000A/B
711002b
476-1OOOA/B
BUK476
-1000A
-1000B
K476
BUK476-1000B
3909
transistor BU 608
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BYV63
Abstract: Telefunken diode color code aeg rectifier BW61 BYV61 aeg telefunken
Text: A E G CORP 17E D 002=i42b □G G ' i f i 3 S 1 • BYV 61 •BYV 62 •BYV 63 ITilLiiFttllliSKlliil electronic Creative Technologies T^es-IS' Silicon M esa Diodes Applications: Very fast rectifier and switch for example for switch mode power supply Features:
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G02cmab
fithJAS65K/W
G05T4at
-T-63-/S
BYV63
Telefunken diode color code
aeg rectifier
BW61
BYV61
aeg telefunken
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 17E D blllS41 MICRON • Kcmaii Me MT1259 883C MILITARY DRAM 256K X 1 DRAM T < K ,-25.- iS DRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-85152 • JAN M38510/246 16L/300 DIP (D-2) FEATURES *A8C 1-W 16
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blllS41
MT1259
M38510/246
16L/300
150mW
00Q173S-
T-46-23
MIL-STD-883
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ECG380
Abstract: ECG379 ECG392 ECG390 ECG377 ECG378 ecg451 ECG385 ECG383 ECG381
Text: PHILIPS E C G INC 17E D Transistors cOntrd! (Maximum ECQ Type ECG376 Collector To Base Volt» | v CBO Description and Application NPN-Si, Pwr Amp 300 ^53=120 D0G2a3b 3 • ' T LT*>-I3> ■ Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Emitter
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ECG376
O-220
ECG377
ECG378)
ECG378
CG377)
ECG379
ECG470
ECG380
ECG392
ECG390
ecg451
ECG385
ECG383
ECG381
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0.01 K100
Abstract: aeg rectifier AEG d 60 n 800 BY527 AEG T 25 N 1000
Text: A E G C ORP 17E O O B ci 4 H b D O D Q ‘1775 T BY 527 TTilLllPlOGOTilM e le ctron ic Creative Technologies o i- ir Silicon Mesa Diodes Applications: Power rectifier Features: • Controlled avalanche characteristics • Low reverse current • Glass passivated junction
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Q02T42b
0.01 K100
aeg rectifier
AEG d 60 n 800
BY527
AEG T 25 N 1000
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BB204
Abstract: 0588 ir 0588 aeg diode
Text: A E G CORP 17E D Q02T42Li 000=175? 7 4 BB 204 ¥ !IL i F K fìK lK Ì electronic Creative Technologies T-07-1? Silicon Epitaxial Planar Dual Capacitance Diodes Applications: Tuning separate resonant circuits, push-pull circuits in FM range Feature: • Com m on cathode
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T-07-i?
BB204
0588
ir 0588
aeg diode
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Z- FIO
Abstract: dcp 4 z Z8038
Text: Z I L O G INC 17E D T1ÖM043 DD1E0Ô3 T " T -S £ -3 3 -D 3 Z8038/Z8538 FIO FIFO Input/ Output Interface Unit October 1988 Features • 128-byte FIFO buffer provides asynchronous bidirectional CPU/CPU or CPU/peripheral interface, expandable to any width in byte
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Z8038/Z8538
128-byte
16-bit
68-Pin
84-Pin
Z- FIO
dcp 4 z
Z8038
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Untitled
Abstract: No abstract text available
Text: BSE D • Ô 2 3 b 3 2 0 0D 17E bö NPN Silicon Darlington Transistors S IE M E N S / SPCLi • • • 4 « S IP SMBTA13 SEMICONDS SMBTA14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering code fo r versions In bulk
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SMBTA13
SMBTA14
Q68000-A4331
Q68000-A4332
Q6800Q-A6475
Q68000-A6476
23b320
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TK10651D
Abstract: TK10487M audio compandor IC
Text: TO K O A M E R I C A " 17E D INC r-7$-67is TOKO * SEMICONDUCTOR Compandor IC Noise Reduction System TK10651M,-L&-D mmwrMs ,.„^. I -».i ; ;>• ,^V,. GENERAL DESCRIPTION H *> .s ‘> ‘‘ •».sss . \ lu.1’.«■>*> j - u l . u m .Ì Ì m /.- u
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-67is
TK10651M
TK10651
TK10651D
TK10487M
audio compandor IC
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Untitled
Abstract: No abstract text available
Text: ! — —— •. MICRON TECHNOLOGY INC b“ 17E D ■ blllS^ MICRON ■ ' . 0DG171b b ' ■ MT4264 883C UCMiOlOGI l*C MILITARY DRAM 64K X 1 DRAM T & 'T Z - t S PIN ASSIGNMENT Top View • SMD 5962-82010 16L/300 DIP (D-2) FEATURES • Industry standard pin-out and timing
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0DG171b
MT4264
16L/300
MIL-STD-883
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Photodiodes Germanium
Abstract: T05 Package T018
Text: O P T O- ELECT RO NICS INC 17E D • baOSOST 00002Û7 h ■ FAST GERMANIUM PHOTODIODES G D SERIES "r-qv-m DESCRIPTION The GD series photodiodes are high quality ger manium diodes housed in T0 1 8 or T 0 5 cans. Low dark current and high sensitivity in the near infrared
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70x80
100x130
250x250
500x500
GD2000
GD1000
Photodiodes Germanium
T05 Package
T018
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Untitled
Abstract: No abstract text available
Text: LANSDALE SEMICONDUCTOR 17E D 531^003 GDDaam d -r-i/3-90 T - 5 2 -0 7 r-V 6-01~ 07 MAXIMUM RATINGS Rating MOTOROLA INTEGRATED CIRCUITS 660T Series Value -V 6 -0 7 -Z 7 T -5 2 -1 1 t- s i- i 9 Power Supply Voltage - V cc Continuous Pulsed, 1.0 s Vdc Vdc 666 MDTL
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-r-i/3-90
C-14-LEAD
-14-LEAD
690T/C
691T/C
693T/E
696T/E
10VVC
25VVC
697T/C
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KV1650
Abstract: Variable Capacitance Diodes kv1250
Text: TO KO A M E R I C A INC 17E D TOKO IÌ42Ì V A R IA B LE C A P A C IT A N C E DIODES 4 .5 V Series Variable Capacitance Diodes for A M Description These variable capacitance diodes were specially developed for use as tuning elements in card radios, radio cassettes,
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KV1250
KV1550
KV1550N
KV1250
490pF
200Min.
KV1550
KV1650
Variable Capacitance Diodes
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DIODE AM MODULATOR
Abstract: DIODE T25 T432 ECG905 k3am
Text: PHILIPS E C G INC 17E D ^ 5 3 ^ 2 5 □□03SciS 1 ECG905 DIODE ARRAY Olt« Dlod« "O u *d " and Two liolittd Dtoda» on a Common Substrat« semiconductors D IM EN SIO N A L O U T L IN E T h e ÎC G 9 0 5 consists of one Diode "Quad" and two Isolated Diodes on a Common Substrate.
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CG905
10-Terminal
ECG905
T-43-24
ECG905.
DIODE AM MODULATOR
DIODE T25
T432
ECG905
k3am
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5ts8
Abstract: IN SDLC PROTOCOL CRC-16 Z80C30 Z85C30
Text: ZILOG INC 17E 3> T=1640Li3 0011173 4 T - 7 5 '3 7 '¿ > 7 October 1988 Z80C 30 C M O S Z - B U S S C C / Z 85C 30 C M O S SCC Serial ' Communications Controller Features • Low power CMOS. ■ Pin compatible to NMOS versions. ■ T w o independent, 0 to 2.5M bit/second, fu ll-du p le x
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1B4043
Z80C30
Z85C30
68-Pin
0070c
84-Pin
5ts8
IN SDLC PROTOCOL
CRC-16
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