Untitled
Abstract: No abstract text available
Text: 18900 Panduit Drive Tinley Park, IL 60487 Customer Service: 800-777-3300 TDS:Resin Ribbon Effective Date: Revision: 16JUL12 1 Technical Data Sheet Thermal Transfer Resin Ribbon This specification is intended to outline the physical and chemical properties of PANDUIT’s black thermal transfer resin ribbon and
|
Original
|
16JUL12
RMRP468BL
RMRP466BL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SiR770DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
62630
Abstract: No abstract text available
Text: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SiA920DJ
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
62630
|
PDF
|
LL4151-GS08
Abstract: No abstract text available
Text: LL4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Electrical data identical with the device 1N4151 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see
|
Original
|
LL4151
1N4151
AEC-Q101
OD-80
GS18/10K
10K/box
GS08/2
LL4151
LL4151-GS18
LL4151-GS08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: For definitions of compliance please see
|
Original
|
1N4150
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
50K/box
1N4150
1N4150-TR
1N4150-TAP
|
PDF
|
SiA447DJ
Abstract: No abstract text available
Text: SPICE Device Model SiA447DJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the P-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SiA447DJ
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145
|
Original
|
SiHP24N65E
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMD Power Inductor CDC5D23B Description • Ferrite drum core construction. • Magnetically unshielded. • L W H: 6.0 6.0 2.5 mm Max. • Product weight: 215mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS
|
Original
|
CDC5D23B
215mg
2000pcs
16-Jul-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMD Power Inductor CDC4D20 Description • Ferrite drum core construction. • Magnetically unshielded. • L W H: 5.0 5.0 2.0 mm Max. • Product weight: 106mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × Environmental Data • Operating temperature range: -40
|
Original
|
CDC4D20
106mg
1000pcs
16-Jul-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145
|
Original
|
SiHG24N65E
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LL4154 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Electrical data identical with the device 1N4154 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see
|
Original
|
LL4154
1N4154
AEC-Q101
OD-80
GS18/10K
10K/box
GS08/2
LL4154-GS18
LL4154-GS08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQ4937EY www.vishay.com Vishay Siliconix Dual P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SQ4937EY
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LL4154 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Electrical data identical with the device 1N4154 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see
|
Original
|
LL4154
1N4154
AEC-Q101
OD-80
GS18/10K
10K/box
GS08/2
LL4154
LL4154-GS18
LL4154-GS08
|
PDF
|
SB-V-3906
Abstract: No abstract text available
Text: BAW27 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: For definitions of compliance
|
Original
|
BAW27
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
50K/box
BAW27
BAW27-TR
BAW27-TAP
SB-V-3906
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: LL4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Electrical data identical with the device 1N4151 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see
|
Original
|
LL4151
1N4151
AEC-Q101
OD-80
GS18/10K
10K/box
GS08/2
LL4151-GS18
LL4151-GS08
|
PDF
|
F17734472000
Abstract: F17733332000 F17733472000 F17734102000 capacitor mkt self healing Vishay Roederstein
Text: F1773-2000 www.vishay.com Vishay Roederstein Suppression Film Capacitors Class X2 AC 253 V MKT - Axial Type FEATURES • Supplied loose in box, taped on reel or ammopack • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
|
Original
|
F1773-2000
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
F17734472000
F17733332000
F17733472000
F17734102000
capacitor mkt self healing
Vishay Roederstein
|
PDF
|
SOD-80 COLOR MARKING
Abstract: LL4150GS18
Text: LL4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: For definitions of compliance please see
|
Original
|
LL4150
AEC-Q101
OD-80
GS18/10K
10K/box
GS18/2
LL4150
LL4150GS18
LL4150GS08
2011/65/EU
SOD-80 COLOR MARKING
|
PDF
|
si4554
Abstract: si4554dy
Text: SPICE Device Model Si4554DY www.vishay.com Vishay Siliconix N- and P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
Si4554DY
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4554
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145
|
Original
|
SiHB24N65E
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
S1216
Abstract: No abstract text available
Text: SPICE Device Model SiS778DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SiS778DN
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S1216
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S=Spare Parts W=Wear Parts POS QTY TE/PN REV 1 1 1-1579004-2 B CSV10 CRIMPING HANDTOOL SOLARLOK 4SQ.MM - 6SQ.MM 2 1 9-1579018-9 A EXTRACTION TOOL 3 20 0-1987281-3 C HVT-SOCKET CONT.ASSY, 6SQ.MM/10AWG 4 20 0-1987280-4 C HVT-PIN CONT. ASSY, 6SQ.MM/10AWG STIFTKONTAKT
|
Original
|
CSV10
MM/10AWG
MM/10AWG
MM/12AWG
16JUL12
17OCT12
AWG10-12)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: For definitions of compliance please see
|
Original
|
1N4150
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
1N4150-TR
1N4150-TAP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2594 MHz 16 VDC 3026 MHz Tuning Voltage: 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 25 35 mA Harmonic Suppression 2 Harmonic :
|
Original
|
10kHz
100kHz
CVCO55CC
CVCO55CC-2594-3026
16-Jul-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LL4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: For definitions of compliance please see
|
Original
|
LL4150
AEC-Q101
OD-80
GS18/10K
10K/box
GS18/2
LL4150GS18
2011/65/EU
2002/95/EC.
|
PDF
|