simm 72pin
Abstract: HMD16M36M12EG
Text: HANBit HMD16M36M12EG 64Mbyte 16Mx36 EDO/with Parity Mode 4K Ref. 72pin-SIMM Design Part No. HMD16M36M12EG GENERAL DESCRIPTION The HMD16M36M12EG is a 16M x 36bit dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 4bit DRAMs in 32-pin SOJ or TSOP packages and four CMOS 16Mx1bit DRAMs in SOJ or TSOP packages
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HMD16M36M12EG
64Mbyte
16Mx36)
72pin-SIMM
HMD16M36M12EG
36bit
32-pin
16Mx1bit
72-pin
simm 72pin
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KMM53616000BK
Abstract: KMM53616000BKG
Text: DRAM MODULE KMM53616000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1bit
KMM53616000BK
KMM53616000BKG
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KMM53632004BK
Abstract: KMM53632004BKG
Text: DRAM MODULE KMM53632004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) components are applied for this module.
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KMM53632004BK/BKG
KMM53632004BK/BKG
16Mx4
16Mx1
KMM53632004B
32Mx36bits
16Mx4bits
16Mx1bit
KMM53632004BK
KMM53632004BKG
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KMM53616000CK
Abstract: KMM53616000CKG
Text: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG
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KMM53616000CK/CKG
16Mx36
16Mx4
16Mx1
KMM53616000CK/CKG
16Mx1,
KMM53616000C
KMM53616000CK
KMM53616000CKG
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KMM53632000BK
Abstract: KMM53632000BKG
Text: DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and
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KMM53632000BK/BKG
KMM53632000BK/BKG
16Mx4
16Mx1,
KMM53632000B
32Mx36bits
16Mx4bits
16Mx1bit
72-pin
KMM53632000BK
KMM53632000BKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53633201BE0/BJ0-C 4Byte 32Mx36 SIMM PDpin 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53633201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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M53633201BE0/BJ0-C
32Mx36
16Mx4
16Mx1
M53633201BE0/BJ0-C
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53631601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53631601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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M53631601BE0/BJ0-C
16Mx36
16Mx4
16Mx1
M53631601BE0/BJ0-C
16Mx1,
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16Mx4bit
Abstract: KMM53616004BK KMM53616004BKG
Text: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs
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KMM53616004BK/BKG
KMM53616004BK/BKG
16Mx4
16Mx1,
KMM53616004B
16Mx36bits
16Mx4bits
16Mx1bit
72-pin
16Mx4bit
KMM53616004BK
KMM53616004BKG
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KMM53616004BK
Abstract: KMM53616004BKG
Text: DRAM MODULE KMM53616004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.
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KMM53616004BK/BKG
KMM53616004BK/BKG
16Mx4
16Mx1,
KMM53616004B
16Mx36bits
16Mx4bits
KMM53616004BK
KMM53616004BKG
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KMM53632004CK
Abstract: KMM53632004CKG
Text: DRAM MODULE KMM53632004CK/CKG 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. KMM53632004CK/CKG DRAM MODULE KMM53632004CK/CKG
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KMM53632004CK/CKG
32Mx36
16Mx4
16Mx1
KMM53632004CK/CKG
KMM53632004C
KMM53632004CK
KMM53632004CKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53613201BE0/BJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53613201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.
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M53613201BE0/BJ0-C
32Mx36
16Mx4
16Mx1
M53613201BE0/BJ0-C
16Mx1,
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KMM53632000CK
Abstract: KMM53632000CKG
Text: DRAM MODULE KMM53632000CK/CKG 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. KMM53632000CK/CKG DRAM MODULE KMM53632000CK/CKG
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KMM53632000CK/CKG
32Mx36
16Mx4
16Mx1
KMM53632000CK/CKG
16Mx1,
KMM53632000C
KMM53632000CK
KMM53632000CKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53631601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53631601CE0/CJ0-C DRAM MODULE M53631601CE0/CJ0-C
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M53631601CE0/CJ0-C
16Mx36
16Mx4
16Mx1
M53631601CE0/CJ0-C
16Mx1,
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Untitled
Abstract: No abstract text available
Text: KM41C16002A CMOS DRAM 16Mx1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package
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OCR Scan
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KM41C16002A
16Mx1Bit
16Mx1
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1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
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OCR Scan
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256Kx4-bit,
1MX16BIT
16MX1
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44C16104A
Abstract: 44c16104
Text: KM M53632004A K/A KG DRAM MODULE KM M53632004AK/AKG EDO Mode 32M X 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M53632004A is a 32Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53632004A consists of sixteen CM O S 16Mx4bits and
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OCR Scan
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M53632004A
M53632004AK/AKG
16Mx4
16Mx1
32Mx36bits
M53632004AK
cycles/64ms
53632004AKG
44C16104A
44c16104
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5816000A/AT Fast Page Mode / 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package / GENERAL DESCRIPTION FEATURES The Samsung KMM5816000A is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816000A consists of eight CMOS
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OCR Scan
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KMM5816000A/AT
16Mx8
KMM5816000A
16Mx1bit
24-pin
30-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 1 6 M x 9 D R A M S IM M , 4K Refresh , 5V Using 16M D R A M with 4 0 0 mil P ackage GENERAL DESCRIPTION The S am sung K M M 5916000A is a 16M bit x 9 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The
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OCR Scan
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KMM5916000A/AT
916000A
16Mx1bit
24-pin
30-pin
KMM5916000A
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Q022B
Abstract: No abstract text available
Text: DRAM MODULE KMM53616000AKG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G EN ER AL DESCR IPTIO N FEATURES The Samsung KMM53616000AK is a 16M bit x 36 Dynamic RAM high density memory module. The • Part Identification
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OCR Scan
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KMM53616000AKG
KMM53616000AK
16Mx36
16Mx4bit
32-pin
16Mx1bit
24-pin
72-pin
Q022B
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PDF
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irp 540
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DESC RIPTIO N The Samsung KMM5916000A is a 16M bit x 9 FEATURES • Performance Range: Dynamic RAM high density memory module. The
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OCR Scan
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KMM5916000A/AT
16Mx9
KMM5916000A
16Mx1bit
24-pin
30-pin
irp 540
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PDF
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km44c16104ak
Abstract: 44c16104
Text: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs
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OCR Scan
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KMM53616004AK/AKG
KMM53616004AK/AKG
16Mx4
16Mx1,
3616004A
16Mx36bits
M53616004AK
cycles/64ms
M53616004AKG
km44c16104ak
44c16104
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16Mx1bit
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte Preliminary KMM5916000a k Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V ^ Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Samsung KMM5916000AK is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000AK consists of nine CMOS
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OCR Scan
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KMM5916000a
16Mx9
KMM5916000AK
16Mx1bit
24-pin
30-pin
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PDF
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KM41C16000BK
Abstract: KMM53632000AK
Text: DRAM MODULE KMM53632000AK/AKG KMM53632000AK/AKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000A is a 32Mx36bits Dynamic Part Identification RAM high density memory module. The Samsung
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OCR Scan
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KMM53632000AK/AKG
KMM53632000AK/AKG
16Mx4
16Mx1,
KMM53632000A
32Mx36bits
16Mx4bits
16Mx1bit
72-pin
KM41C16000BK
KMM53632000AK
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte Preliminary KMM5816000AK Fast Page Mode 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KM M 5816000AK is a 16M bit x 8 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The
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OCR Scan
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KMM5816000AK
16Mx8
5816000AK
16Mx1bit
24-pin
816000A
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