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    16160A Search Results

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    16160A Price and Stock

    Integrated Silicon Solution Inc IS43DR16160A-3DBI

    IC DRAM 256MBIT PAR 84TWBGA
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    Integrated Silicon Solution Inc IS43DR16160A-3DBL

    IC DRAM 256MBIT PAR 84TWBGA
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    Integrated Silicon Solution Inc IS43DR16160A-25EBL

    IC DRAM 256MBIT PAR 84TWBGA
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    Integrated Silicon Solution Inc IS43DR16160A-5BBLI

    IC DRAM 256MBIT PAR 84TWBGA
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    Integrated Silicon Solution Inc IS43DR16160A-37CBL

    IC DRAM 256MBIT PAR 84TWBGA
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    Bristol Electronics IS43DR16160A-37CBL 74
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    16160A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X633

    Abstract: MTG-16160A LCM 5v 182 EL DRIVER X033H
    Text: MTG-16160A GENERAL SPECIFICATION Item INTERFACE PIN ASSIGNMENT Content Pin No. Pin Out Function Description Number of Character 160x160 Module Size 69.0 W x70.5(H)x6.2(D)mm Max Viewing Area 63.4(W)x63.3(H)mm Dot Size/Dot Pitch 0.33(W)x0.33(H)mm/0.35(W)x0.35(H)mm


    Original     		PDF MTG-16160A 160x160 00V/400Hz X633 MTG-16160A LCM 5v 182 EL DRIVER X033H

    Untitled

    Abstract: No abstract text available
    Text: IS43R83200A -6,-75 16160A -6,-75 ISSI 4-bank x 8,388,608 - word x 8-bit (4-bank x 4,194,304 - word x 16-bit) 256 Mb DDR Synchronous DRAM May 2005 DESCRIPTION IS43R83200A is a 4-bank x 8,388,608-word x 8bit, 16160A is a 4-bank x 4,194,304-word x 16bit double


    Original     		PDF IS43R83200A IS43R16160A 16-bit) 608-word 304-word 16bit IS43R83200A/16160A

    Untitled

    Abstract: No abstract text available
    Text: IS42D46400A -5,-6,-75 4-bank x 16,777,216 - word x 4-bit IS42D83200A -5,-6,-75 (4-bank x 8,388,608 - word x 8-bit) 16160A -5,-6,-75 (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb DDR Synchronous DRAM January 2005 DESCRIPTION IS42D46400A is a 4-bank x 16,777,216-word x 4-bit,


    Original     		PDF IS42D46400A IS42D83200A IS42D16160A 16-bit) 216-word 608-word 304-word

    TSOP 54 PIN

    Abstract: No abstract text available
    Text: IS42S83200A 4-bank x 8,388,608 - word x 8-bit 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM January 2005 DESCRIPTION IS42S83200A is a synchronous 128Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and 16160A is organized as 4-bank x 4,194,304-word x


    Original     		PDF IS42S83200A IS42S16160A 16-bit) IS42S83200A 128Mb 608-word IS42S16160A 304-word 16-bit. TSOP 54 PIN

    IS42S16160A

    Abstract: 42S83200A IS42S83200A IS42S16160A-7TL
    Text: IS42S83200A 4-bank x 8,388,608 - word x 8-bit 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM November 2005 DESCRIPTION IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and 16160A is organized as 4-bank x 4,194,304-word x


    Original     		PDF IS42S83200A IS42S16160A 16-bit) IS42S83200A 256Mb 608-word IS42S16160A 304-word 16-bit. 42S83200A IS42S16160A-7TL

    IS42S16160A

    Abstract: IS42S83200A
    Text: IS42S83200A 4-bank x 8,388,608 - word x 8-bit 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM November 2005 DESCRIPTION IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and 16160A is organized as 4-bank x 4,194,304-word x


    Original     		PDF IS42S83200A IS42S16160A 16-bit) IS42S83200A 256Mb 608-word IS42S16160A 304-word 16-bit.

    Untitled

    Abstract: No abstract text available
    Text: IS42S83200A 4-bank x 8,388,608 - word x 8-bit 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM November 2005 DESCRIPTION IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and 16160A is organized as 4-bank x 4,194,304-word x


    Original     		PDF IS42S83200A IS42S16160A 16-bit) IS42S83200A 256Mb 608-word IS42S16160A 304-word 16-bit.

    Untitled

    Abstract: No abstract text available
    Text: IS42S46400A 4-bank x 16,777,216 - word x 4-bit IS42S83200A (4-bank x 8,388,608 - word x 8-bit) 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM AUGUST 2004 DESCRIPTION IS42S46400A is organized as 4-bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and


    Original     		PDF IS42S46400A IS42S83200A IS42S16160A 16-bit) IS42S46400A 216-word IS42S83200A 608-word IS42S16160A 304-word

    DC-37PTI

    Abstract: ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


    Original     		PDF C-865 UT-304 FCT-551 FCT-552 DC-37PTI ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500

    5-176-3 terminal block

    Abstract: mini circuits 15542 MS14141 DIN 18541 8-32X3 s31512 mini 15542 P-306-CCE 5-140-Y E61245
    Text: COMMERCIAL Barrier Blocks Circular Mini DIN BNC Jones Plugs Edge Connectors Commercial [.050” 1.27mm Density Solder Introduction Cup/Wire D-Microminiature] Cinch Commercial Products, consisting of Jones Plugs and Sockets, Barrier Blocks, Edge Cards, Two-Piece Commercial Dins,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DURA-CON Barrier Block High Reliability Accessories All-Plastic Fanning Fanning Strips Strips Catalog Numbers and Dimensions for Fanning Strips for 140 Series Terminal Blocks, Continued Right-Angle Type Dimensions 2 Catalog No. 6-160A-R Ordering Information


    Original     		PDF 60A-R 0-160A-R

    LINDNER fuses

    Abstract: NFC 63210 lindner fuse lindner nh fuse LINDNER gG fuses LINDNER nh ferraz nh Ferraz Shawmut fuse nh FERRAZ FUSELINK lindner
    Text: EURO/IEC Fuses & Accessories gG, aM NH DIMENSION KNIFE-BLADE FUSE-LINKS nh dimension knife-blade fuse-links, fuse bases, and accessories Ferraz Shawmut NH Fuse-links, sizes 000, 00, 0, 1, 2, 3, 4 and 4a are rated 500 or 690 Volts AC with breaking capacities of 80kA or 120kA. All fuse-links include an


    Original     		PDF 120kA. LINDNER fuses NFC 63210 lindner fuse lindner nh fuse LINDNER gG fuses LINDNER nh ferraz nh Ferraz Shawmut fuse nh FERRAZ FUSELINK lindner

    IC60N

    Abstract: IC60N C CURVE A9A26948 A9C30811 NG125L vigi C60 C60H VIGI IC60N c 6a TM 18311 DB4050
    Text: Applications Guide 1 Acti 9 Protection for specialised applications Acti 9 is Schneider Electric’s new core modular system In addition, we offer back-up tables providing quick, that makes your power distribution installation safer, at-a-glance overview of everything you need to know


    Original     		PDF 202L5020 A9S60120 202L5532 A9S60432 202L5563 A9S60463 SE1042DK IC60N IC60N C CURVE A9A26948 A9C30811 NG125L vigi C60 C60H VIGI IC60N c 6a TM 18311 DB4050

    DIN 41529

    Abstract: bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


    Original     		PDF C-865 UT-304 FCT-551 FCT-552 DIN 41529 bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb

    BACC63CB

    Abstract: bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


    Original     		PDF C-865 UT-304 FCT-551 FCT-552 BACC63CB bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft

    Untitled

    Abstract: No abstract text available
    Text: 16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi 16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance


    OCR Scan     		PDF HM51W16160A HM51W18160A 1048576-word 16-bit ADE-203-217B 576-word 16-bit.

    SEM t11

    Abstract: 39S16800 39S16800AT-8 Q1323 q1333
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command


    OCR Scan     		PDF HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil SEM t11 39S16800 39S16800AT-8 Q1323 q1333

    4170A

    Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
    Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL


    OCR Scan     		PDF GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL 71C41OOD/DL 71C4400B/BL 71C4400C/CL 71C4400D/DL GM71C 800A/AL 4170A mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264

    TC5118160

    Abstract: c51v tc5118180
    Text: X6 Capacity Type No. Max. Access Time ns Min. Cyde Power Organization Time(ns) Supply (V) Max. Powat Dis»ip»tk>n(rciW) Active *T C 5 1 16800ANJ/ANT-60 60 15 30 110 523 *T C 5 1 16800ANJ/ANT-70 70 20 35 130 440 *TC5117800ANJ/ANT-60 60 15 30 110 743 2097152


    OCR Scan     		PDF 16800ANJ/ANT-60 16800ANJ/ANT-70 TC5117800ANJ/ANT-60 17800ANJ/ANT-70 TC51V16800AN J/ANT-70 V17800ANJ/ANT-70 TC5116900AJ/AFT-60 16900AJ/AFT-70 17900AJ/AFT-60 TC5118160 c51v tc5118180

    D010

    Abstract: D016 MSM51V18160 MSM51V18160A msm5116160a msm5118160a msm51v16160a
    Text: O K I Sem iconductor MSM5 1 V18160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V 18160A is a 1,048,576-w ord x 16-bit D y n a m ic R A M fab ricated in O K I's C M O S silicon g a te tech n ology. T he M SM 51V 18160A ach ieve h igh in tegration, h ig h -sp e e d o p eratio n , an d low -pow er


    OCR Scan     		PDF MSM51V18160A 576-Word 16-Bit MSM51V18160A 42-pin 50/44-pin D010 D016 MSM51V18160 msm5116160a msm5118160a msm51v16160a

    Untitled

    Abstract: No abstract text available
    Text: H M 5 1 W 1 6 1 6 0 A Preliminary S e r i e s 1 ,0 4 3 ,576-w ord x 16-bit D ynam ic R and o m A c c e ss M e m o ry HITACHI • Single 3.3 V + 0.3 V • High speed - Access time 60 ns/ 70 ns/ 80 ns (max) • Low power dissipation - Active mode 360 m\V/324 m\V/2S8 mW (max)


    OCR Scan     		PDF 576-w 16-bit 6160A HM51VV16160 1616CAJ-7 60AJ-8 16160ATT-6 60ATT-7 60ATT-8

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8

    GM7IC

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The 16160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. 16160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.


    OCR Scan     		PDF GM71C16160A 40EA757 00G4ci51 GM7IC

    GM76C256all

    Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
    Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410