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Infineon Technologies AG IKW15N120CS7XKSA1 IGBT TRENCH FS 1200V 36A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKW15N120CS7XKSA1	Tube	114		1	1 $6.26 10 $6.26 100 $3.564 1000 $2.53498 10000 $2.47513	Buy Now
Avnet Americas	IKW15N120CS7XKSA1	Tube		12 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IKW15N120CS7XKSA1		237			1 $5.74 10 $5.48 100 $2.97 1000 $2.47 10000 $2.47	Buy Now
Newark	IKW15N120CS7XKSA1	Bulk	224		1	1 $5.92 10 $4.97 100 $4.02 1000 $3.57 10000 $3.57	Buy Now
Rochester Electronics	IKW15N120CS7XKSA1		180		1	1 $2.75 10 $2.75 100 $2.59 1000 $2.34 10000 $2.34	Buy Now

Chip1Stop	IKW15N120CS7XKSA1	Tube	240			1 $5.35 10 $4.13 100 $3.09 1000 $2.94 10000 $2.94	Buy Now
EBV Elektronik	IKW15N120CS7XKSA1			13 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGP15N120C IGBT 1200V 30A 200W TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGP15N120C	Tube			50	1 - 10 - 100 $3.234 1000 $3.234 10000 $3.234	Buy Now
IXYS Corporation IXGT15N120C IGBT 1200V 30A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGT15N120C	Tube			30	1 - 10 - 100 $5.793 1000 $5.793 10000 $5.793	Buy Now
IXYS Corporation IXGH15N120C IGBT 1200V 30A 150W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH15N120C	Tube			30	1 - 10 - 100 $3.77333 1000 $3.77333 10000 $3.77333	Buy Now
Bristol Electronics	IXGH15N120C		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC HGTG15N120C3 35A, 1200V, N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG15N120C3	Bulk			70	1 - 10 - 100 $4.32 1000 $4.32 10000 $4.32	Buy Now

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15N120C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
15N120C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

15N120C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	PDF	15N120C O-247 O-268
15N120BD1 Abstract: 15N120 15N120CD1 IXGT15N120BD1 Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	15N120BD1 15N120CD1 O-247AD 15N120BD1 15N120 15N120CD1 IXGT15N120BD1
Untitled Abstract: No abstract text available Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C	Original	PDF	15N120C O-220AB O-263 728B1
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	15N120C O-220AB O-263 O-220
15N120BD1 Abstract: 15N120CD1 IXGT15N120BD1 Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	15N120BD1 15N120CD1 O-247AD O-268 15N120CD1 IXGT15N120BD1
Untitled Abstract: No abstract text available Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat =1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	15N120C O-220AB O-263
oni350 Abstract: IXGA 15N120C 15N120C Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat =1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	15N120C O-220AB O-263 M10V/ns oni350 IXGA 15N120C 15N120C
IXGT15N120BD1 Abstract: 15N120BD1 Text: Advanced Technical Information VDSS Low VCE sat IGBT with Diode High Speed IGBT with Diode IXGH/T 15N120BD1 IXGH/T 15N120CD1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES	Original	PDF	15N120BD1 15N120CD1 O-247AD O-268 IXGT15N120BD1
Untitled Abstract: No abstract text available Text: IGBT IXGH 15N120C VCES = 1200 V = 30 A IXGT 15N120C IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Lightspeed Series Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	PDF	15N120C O-268 O-247 O-268 O-247)
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	PDF	15N120C 15N120C O-220AB O-263
Untitled Abstract: No abstract text available Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V IC25 = 30 A 3.8 V VCE sat = tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	PDF	15N120C 15N120C O-268 O-247
15n120 Abstract: 15N120CD1 15N120BD1 IGBT g Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	15N120BD1 15N120CD1 O-247AD 15n120 15N120CD1 15N120BD1 IGBT g
HGT1S15N120C3 Abstract: HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C Text: 15N120C3, 15N120C3, 15N120C3, 15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching	Original	PDF	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 150oC. 350ns HGT1S15N120C3 HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C
15N120C3D Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C Text: 15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The 15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance	Original	PDF	HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 15N120C3D LD26 RHRP15120 15N120C

15N120C3 Abstract: HGT1S15N120C3 HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG Text: S E M I C O N D U C T O R 15N120C3, 15N120C3, 15N120C3, 15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching	Original	PDF	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 150oC. 350ns 15N120C3 HGT1S15N120C3 HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG
15N120B2 Abstract: IXGP15N120B2 IXGA15N120B2 Text: HiPerFASTTM IGBT VCES IC25 VCE sat IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching =1200 V = 30 A = 3.5 V = 137 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR	Original	PDF	15N120B2 O-220AB O-263 065B1 728B1 123B1 728B1 15N120B2 IXGP15N120B2 IXGA15N120B2
12n60c Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60 Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM	Original	PDF	O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
RGE 17-18 Abstract: TO220-4 weight Text: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i	OCR Scan	PDF	15N120C O-220 O-263 RGE 17-18 TO220-4 weight
Untitled Abstract: No abstract text available Text: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM	OCR Scan	PDF	15N120C
15N120CD1 Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047 Text: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR	OCR Scan	PDF	15N120BD1 15N120CD1 O-268 15N120CD1 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
15N120C3 Abstract: No abstract text available Text: 15N120C3, 15N120C3, 15N120C3, 15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching	OCR Scan	PDF	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 350ns 15N120C3
Untitled Abstract: No abstract text available Text: 15N120C3D S E M I C O N D U C T O R " " m • w ■ mM v 35A, 1200V, UFS Series N-C hannel IGBT w ith A nti-Parallel H yperfast Diode May 1997 Features Description • 35A, 1200V at T c = 25°C The 15N120C3D is a MOS gated high voltage switch ing device combining the best features of MOSFETs and	OCR Scan	PDF	HGTG15N120C3D HGTG15N120C3D 350ns 1-800-4-HARRIS
247EH Abstract: No abstract text available Text: M S E A R R I S H M I C O N D U C T O R G T G 1 5 N 1 2 C 3 D 35A, 1200V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e M ay 1997 Features Description • 35A, 1 200V at T c = 2 5 ° C T h e H G T G 1 5 N 1 2 0 C 3 D is a M O S gated high vo lta g e s w itc h	OCR Scan	PDF
15N120C3 Abstract: TP15N120 15n120 Text: HAFRRIS 15N120C3, 15N120C3, 15N120C3, 15N120C3S S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1 200V, T c = 25°C The HGTG15N120G3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching	OCR Scan	PDF	HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGTG15N120G3, HGT1S15N120C3 HGT1S15N120C3S 1-800-4-HARRIS 15N120C3 TP15N120 15n120

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15N120C Search Results

15N120C Price and Stock

Infineon Technologies AG IKW15N120CS7XKSA1

IXYS Corporation IXGP15N120C

IXYS Corporation IXGT15N120C

IXYS Corporation IXGH15N120C

Rochester Electronics LLC HGTG15N120C3

15N120C Datasheets (1)

15N120C Datasheets Context Search

Untitled

15N120BD1

Untitled

Untitled

15N120BD1

Untitled

oni350

IXGT15N120BD1

Untitled

Untitled

Untitled

15n120

HGT1S15N120C3

15N120C3D

15N120C3

15N120B2

12n60c

RGE 17-18

Untitled

15N120CD1

15N120C3

Untitled

247EH

15N120C3