9956b
Abstract: c836 irgti140u06 diode c832 c833 *9956b 956B 4ASS452 mosfet c836
Text: International S Rectifier PD-9.956B IRGTI140U06 “HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT V CE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI140U06
100nH
C-836
4ASS452
0050b2b
9956b
c836
irgti140u06
diode c832
c833
*9956b
956B
mosfet c836
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C772
Abstract: No abstract text available
Text: PD-9.962B htem ational [îôr IRectifier IRGKI090U06 “CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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IRGKI090U06
25KHz
100KHz
C-776
C772
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DIODE c802
Abstract: IRGNI115U06
Text: bitemational [ t o r Rectifier PD'"71 IRGNI115U06 “CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGNI115U06
C-806
DIODE c802
IRGNI115U06
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X28C64
Abstract: X28C256 ucl 11 A12C UCl 21
Text: RR-511 W 0114-1 X 2 8 C 6 4 /X 2 8 C 2 5 6 RELIABILITY REPORT 10-1 INTRODUCTION The X28C64 and X28C 256 are nonvolatile bytewide E2PROM s configured as 8K x 8 and 32K x 8 respectively. Both devices are com pliant with the JEDEC approved pinout for byte-w ide m em ories.
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X28C64/X28C256
X28C64
X28C256
64-byte
330ii
X28C64.
X28C64/X28C256
X28C64:
ucl 11
A12C
UCl 21
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Untitled
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : c 5 .8 4 M ax 5 1 o- £ -o 6 4o- -o 8 x o O •CD lTI 3. E l e c t r i c a l S p e c i f i c a t i o n s : Osi OCL: Pins 1 - 4 500uH ±25% @ 10K H z 0 .1 V 0CL: Pins 5 - 8 9 .5 0 m H ± 2 5 % <§>10KHz 0.1V
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XF5006â
500uHÂ
10KHz
500uH
100KHz
1500Vac,
E151556
102mm)
92KHz
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C818
Abstract: st c817 C817 st c816 C814 irgti050u06 c816
Text: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"
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IRGTI050U06
C-817
46554S2
C-818
Mfl5545£
0Q20LÜ
C818
st c817
C817
st c816
C814
irgti050u06
c816
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Untitled
Abstract: No abstract text available
Text: International l i i Rectifier PD-9.1171 IRGDDN300M12 IRGRDN300M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 300A • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated
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IRGDDN300M12
IRGRDN300M12
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Untitled
Abstract: No abstract text available
Text: bitemational S Rectifier PM” IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce O N < 2 .5 V
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IRGTDN150M12
100nH
C-574
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d2s diode
Abstract: D2S DIODE schottky
Text: Schottky Barrier Diode Axial Diode W tm D2S4M OUTLINE Package : A X 40V 2A 078 Unit-mm Weight 0.38g Typ (D Feature • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • Tj=150°C • P r r s m Rating • D C /D C nyjt-l? • mm.cf-A.oAm • • •
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm D25SC6MR OUTLINE 60V 25A 1 Ü W Feature • Tj=150°C • • T j= 15 0 °C P R R S M T ’A ' i ^ V Î ' I ' K i E • * i « S • P rrsm Rating • H igh lo Rating i • 7 [Æ -J U K • Full M o ld e d Main Use
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D25SC6MR
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csi-2
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : c 5 .8 4 M ax £ 1 o- 5 4o- -o 8 x o O •CD lTI 3. E l e c t r i c a l S p e c i f i c a t i o n s : Osi OCL: Pins 1 - 4 500uH Min @192KHz 0,1V LL: Pins 1 - 4 0.500uH Max @100KHz 0.1V sh o rt 5 - 8
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XF5756â
500uH
192KHz
100KHz
1000Vac,
E151556
102mm)
92KHz
csi-2
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2AX SMD
Abstract: No abstract text available
Text: 1. M e c h a n ic a l: 2. S c h e m a t ic : A 1 2 .7 ± 0 .4 D Q o o co -H £ 801^ 0 ^ - 9 0 MMÀA SyiAIJX tsi 3. Electrical Specifications: @25"C OCL: 4 .0 u H ± 1 0% @ 100KHz, 0.1V 0ADC 3 .5 0 Q: 2 2 3 .5 0 — Isat: - Min @10DKHz 0.1V 13.0A B a se d
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MIL-5TD-202G,
102mm)
100KHz,
100KHz
XF121206â
4R0M083
Aug-14-08
2AX SMD
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40hC
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : c 6.00 5 1 o- M ax £ -o 6 4o- -o 8 x o O •CD lTI 3. E l e c t r i c a l S p e c i f i c a t i o n s : Osi OCL: Pins 1 - 4 594-uH±25% @100KHz 0.1V 0CL: Pins 5 - 8 4.39m H±25% <§>100KHz 0.1V
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XF5946â
594-uHÂ
100KHz
500Vdc,
E151556
102mm)
92KHz
40hC
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C818
Abstract: rq20 C814 c815
Text: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI050U06
C-817
C-818
C818
rq20
C814
c815
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DIODE C817
Abstract: IRGTI050U06 C813 C818 C817 DIODE C813
Text: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
C-817
IRGTI050U06
C-818
DIODE C817
C813
C818
C817
DIODE C813
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208H
Abstract: No abstract text available
Text: 2 . S ch em atic: 1. D im ensions: o- o2 .9 Ì0 .2 B 2 .5 ± 0 .2 3. E lectrical Specs: OCL: 82uH ± 5 % @ 2.52M Hz, Q: 3 0 SRF: Min @ 2.52MHz 11 MHz Min DC Res.: 1 0 .0 Max Ohms DC C u rre n t: 4 5 m A d c 1 ,0 ±0.1 1V Max Notes: 1. S old e rab llity: Leads shall m e e t MIL— STD— 202D,
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52MHz,
52MHz
45mAdc
MIL-STD-202G,
UL84V-0
Cla93
E151556
10Zmm)
208H
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1808 FOOTPRINT
Abstract: XF0246-02S
Text: 1. Dim ensions: 2. S c h e m a t i c : 0.475 Max E 0.100 0.360 Max n ñ fl ñ; X o XFMRS XF0246-02S . YYWW ta i« r•'t d 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C HYPOT: 500Vrm s y y ü u. Turns Ratio: 1:1:1:1 ±2% 0CL: 24-uH Min @100KHz 0.020V, Each Wdg
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XF0246-02S
500Vrms
100KHz
020Vrms
200mA
MIL-STD-202G,
15ffC.
E151556
1808 FOOTPRINT
XF0246-02S
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IRGKI050U06
Abstract: No abstract text available
Text: I n t e r n a t io n a l S P M 96,B Rectifier IRGKI050U06 "CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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IRGKI050U06
25KHz
100KHz
C-770
IRGKI050U06
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