MD2310FX
Abstract: MD2310 id 11801
Text: MD2310FX High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement
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MD2310FX
MD2310FX
MD2310
id 11801
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BCR10
Abstract: M69KM096AA
Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus
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M69KM096AA
83MHz
32-Word)
83MHz
BCR10
M69KM096AA
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Untitled
Abstract: No abstract text available
Text: SN74LVC1T45 SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES515G – DECEMBER 2003 – REVISED DECEMBER 2005 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages
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SN74LVC1T45
SCES515G
24-mA
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Untitled
Abstract: No abstract text available
Text: M65KC512AB 512Mbit 4 Banks x 4M x 32 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Preliminary Data Features summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 4MWords, each 32 bits wide ■ Supply Voltage – VDD = 1.7 to 1.9V (1.8V typical in
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M65KC512AB
512Mbit
133MHz
512Mbit
133MHz
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Untitled
Abstract: No abstract text available
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FB
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Untitled
Abstract: No abstract text available
Text: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FT
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bcr10
Abstract: No abstract text available
Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ Multiplexed Address/Data bus
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M69KM096AA
83MHz
32-Word)
83MHz
bcr10
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TFBGA105
Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
Text: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M39P0R9080E0
TFBGA105
TFBGA105
M58PR512J
JESD97
M39P0R9080E0
TFBGA-105
strataflash 512mbit
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p5nk60zfp
Abstract: STD5NK60Z P5NK60 P5NK60Z STP5NK60ZFP p5nk60zf D5NK6 STD5NK60ZT4 STP5NK60Z D5NK60
Text: STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS@ TJmax RDS on Id PTOT STP5NK60Z STP5NK60ZFP STD5NK60Z 650 V 650 V 650 V < 1.6 Ω
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STD5NK60Z
STP5NK60Z
STP5NK60ZFP
O-220/FP/DPAK
STP5NK60Z
p5nk60zfp
STD5NK60Z
P5NK60
P5NK60Z
STP5NK60ZFP
p5nk60zf
D5NK6
STD5NK60ZT4
D5NK60
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A0-A21
Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FB
TFBGA48
A0-A21
JESD97
M29W640F
M29W640FB
M29W640FT
TFBGA48
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments AMC7823 SLAS453B – APRIL 2005 – REVISED DECEMBER 2005 ANALOG MONITORING AND CONTROL CIRCUIT FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • 12-Bit ADC 200 kSPS – Eight Analog Inputs
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AMC7823
SLAS453B
12-Bit
QFN-40,
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Untitled
Abstract: No abstract text available
Text: TS321 LOW-POWER SINGLE OPERATIONAL AMPLIFIER www.ti.com SLOS489 – DECEMBER 2005 FEATURES • • • • • • D SOIC PACKAGE (TOP VIEW) Wide Power-Supply Range – Single Supply…3 V to 30 V – Dual Supply…±1.5 V to ±15 V Large Output Voltage Swing…
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TS321
SLOS489
OT-23-5)
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Untitled
Abstract: No abstract text available
Text: ESDA14V2-4BF3 Quad bidirectional Transil array for ESD protection Features • 4 bidirectional Transil functions ■ ESD Protection: IEC 61000-4-2 level 4 ■ Stand-off voltage: 12 V min. ■ Low leakage current < 0.5 µA ■ 50 W Peak pulse power 8/20 µs
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ESDA14V2-4BF3
883G-Method
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Numonyx
Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48 A0-A21
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FB
TFBGA48
Numonyx
JESD97
M29W640F
M29W640FB
M29W640FT
TFBGA48
A0-A21
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Untitled
Abstract: No abstract text available
Text: TS951, TS952, TS954 Input/output rail-to-rail low power operational amplifiers Features TS951ILT • Rail-to-rail input common-mode voltage range ■ Rail-to-rail output voltage swing ■ Operating from 2.7 V to 12 V ■ High-speed 3 MHz, 1 V/µs ■ Low consumption (0.9 mA at 3 V)
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TS951,
TS952,
TS954
TS951ILT
OT23-5
TS951ID
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sot23-5 package marking k101
Abstract: MARKING AAA sot23-5 st DIP14 marking code 5561 st
Text: TS951, TS952, TS954 Input/output rail-to-rail low power operational amplifiers Datasheet − production data Features TS951ILT • Rail-to-rail input common mode voltage range ■ Rail-to-rail output voltage swing ■ Operating from 2.7 V to 12 V ■ High-speed 3 MHz, 1 V/µs
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TS951,
TS952,
TS954
TS951ILT
OT23-5
DIP14,
SO-14,
TSSOP14
TS951ID
TS954IN-Td
sot23-5 package marking k101
MARKING AAA sot23-5
st DIP14 marking code
5561 st
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CHN 750
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments AMC7823 SLAS453B – APRIL 2005 – REVISED DECEMBER 2005 ANALOG MONITORING AND CONTROL CIRCUIT FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • 12-Bit ADC 200 kSPS – Eight Analog Inputs
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AMC7823
SLAS453B
12-Bit
QFN-40,
CHN 750
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marking EG
Abstract: AN1751 Date Code Marking STMicroelectronics Part Marking STMicroelectronics AN1235 ESDA14V2-2BF3 JESD97 M033
Text: ESDA14V2-2BF3 ASD Application Specific Devices Dual bidirectional TRANSIL array for ESD protection Application Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers ■ Printers ■ Communication systems and cellular phones
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ESDA14V2-2BF3
ESDA14V2-2BF3
IEC61000-4-2without
marking EG
AN1751
Date Code Marking STMicroelectronics
Part Marking STMicroelectronics
AN1235
JESD97
M033
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Untitled
Abstract: No abstract text available
Text: STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS@ TJmax RDS on Id PTOT STP5NK60Z STP5NK60ZFP STD5NK60Z 650 V 650 V 650 V < 1.6 Ω
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STD5NK60Z
STP5NK60Z
STP5NK60ZFP
O-220/FP/DPAK
STP5NK60Z
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M0333
Abstract: ESDA14V2-4BF3 JESD97 M-0333 Part Marking STMicroelectronics BV16
Text: ESDA14V2-4BF3 ASD Application Specific Devices Quad bidirectional TRANSIL array for ESD protection Application Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers ■ Printers ■ Communication systems and cellular phones
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ESDA14V2-4BF3
ESDA14V2-4BF3
IEC61000-4-2
M0333
JESD97
M-0333
Part Marking STMicroelectronics
BV16
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ESDA14V2-2BF3
Abstract: AN1751 AN2348 JESD97
Text: ESDA14V2-2BF3 Quad bidirectional Transil array for ESD protection Features • 2 bidirectional Transil functions ■ ESD protection: IEC 61000-4-2 level 4 ■ Stand off voltage: 12 V Min. ■ Low leakage current ■ Very small PCB area < 1.5 mm2 ■ 400 microns pitch
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ESDA14V2-2BF3
ESDA14V2-2BF3
AN1751
AN2348
JESD97
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Untitled
Abstract: No abstract text available
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FB
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TS951-TS952-TS954
Abstract: q001 TS951 TS951ID TS951ILT TS952 TS954 TSSOP14 marking e3 sot23-5 952i
Text: TS951-TS952-TS954 Input/output rail-to-rail low power operational amplifier Features • Rail-to-rail input common-mode voltage range ■ Rail-to-rail output voltage swing ■ Operating from 2.7V to 12V ■ High-speed 3MHz, 1V/µs ■ Low consumption (0.9mA @ 3V)
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TS951-TS952-TS954
TS951ILT
OT23-5
TS951ID
TS952IN-and
TS951-TS952-TS954
q001
TS951
TS951ID
TS951ILT
TS952
TS954
TSSOP14
marking e3 sot23-5
952i
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D G [M c a P P [H g]|g -Ô- 0.95 IS H i — ô — g )a -Ô- -Ô- -Ô- -Ô- -Ô- -Ô- - Ô -Ô- - M A X —• 2 .0 - 24 SPACES AT
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31MAR2000
15DEC2005
US040973
\dmmod\5646728-c
ECR-11-003871
22FEB11
04AUG05
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