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    15A 50V P-CHANNEL MOSFET Search Results

    15A 50V P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    15A 50V P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D15P05

    Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
    Text: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using


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    PDF RFD15 P05SM, RFP15 RFD15P05, RFD15P05SM, RFP15P05 1e-30 15e-4 47e-3 D15P05 RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris

    D15P05

    Abstract: RFP15P05 P-channel MOSFET VGS -25V transistor RFD15P05 RFD15P05SM RFD15P05SM9A TB334 RFD15P05 d15p0
    Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet January 2002 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives


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    PDF RFD15P05, RFD15P05SM, RFP15P05 TA09833. TB334 D15P05 RFP15P05 P-channel MOSFET VGS -25V transistor RFD15P05 RFD15P05SM RFD15P05SM9A TB334 RFD15P05 d15p0

    D15P05

    Abstract: No abstract text available
    Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs [ /Title RFD1 5P05, RFD15 P05S M, RFP15 P05 /Subject (15A, 50V, 0.150 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power


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    PDF RFD15P05, RFD15P05SM, RFP15P05 RFD15 RFP15 O220AB O251AA D15P05

    D15P05

    Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
    Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


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    PDF RFD15P05, RFD15P05SM, RFP15P05 TA09833. TB334 D15P05 RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334

    RFP15P05

    Abstract: RFD15P05SM RFD15P05 RFD15P05SM9A F15P05
    Text: RFD15P05, RFD15P05SM, RFP15P05 S E M I C O N D U C T O R 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 50V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model


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    PDF RFD15P05, RFD15P05SM, RFP15P05 O-220AB O-251AA RFP15P05 1e-30 15e-4 RFD15P05SM RFD15P05 RFD15P05SM9A F15P05

    FX30KMJ-2

    Abstract: 4450 mosfet
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30KMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


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    PDF FX30KMJ-2 100ns FX30KMJ-2 4450 mosfet

    FX30VSJ2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30VSJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5


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    PDF FX30VSJ-2 100ns FX30VSJ2

    fx30smj2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2


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    PDF FX30SMJ-2 100ns fx30smj2

    fx30umj2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30UMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30UMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0 3.2


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    PDF FX30UMJ-2 100ns fx30umj2

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


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    PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    FX30KMJ-3

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


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    PDF FX30KMJ-3 100ns FX30KMJ-3

    D15P05

    Abstract: No abstract text available
    Text: * f* 3 2 S RFD15P05, RFD15P05SM, RFP15P05 -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A,-50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­


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    PDF RFD15P05, RFD15P05SM, RFP15P05 Rele-30 1e-30 15e-4 47e-3 37e-5) D15P05

    2671I

    Abstract: D15P05 RFP15P05 673E-9
    Text: RFD15P05, RFD15P05SM, RFP15P05 f f l H A R R IS CKJ 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D EC TO-22QAB • 15A ,50V ’ *”d s o n = 0 .1 5 0 1 2 • Temperature Compensating PSPICE Model


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    PDF RFD15P05, RFD15P05SM, RFP15P05 O-22QAB -251A 15e-4 47e-3 37e-5) 71e-3 41e-6) 2671I D15P05 RFP15P05 673E-9

    fs30umh-2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30UMH-2 HIGH-SPEED SWITCHING USE FS30UMH-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. . 1.3 \ j j 3.6 1.0 ÎL 0.8 2.54 • 2.5V DRIVE • VDSS .100V • Integrated Fast Recovery Diode TYP.


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    PDF FS30UMH-2 O-220 fs30umh-2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30ASJ-2 HIGH-SPEED SWITCHING USE FS30ASJ-02 * * • 4V DRIVE • VD S S .100V • rDS ON (MAX) . 84mQ


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    PDF FS30ASJ-2 FS30ASJ-02 100nH 1CH23 571CH23

    Untitled

    Abstract: No abstract text available
    Text: I MITSUBISHI Neh POWER MOSFET FS30SMH-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING • 2.5V DRIVE • V D SS .100V • rDS ON (MAX) .93mQ • Id . 30A


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    PDF FS30SMH-2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30SMJ-2 HIGH-SPEED SWITCHING USE FS30SMJ-02 • 4V DRIVE • V d s s . 1 o o v • rDS ON (MAX) .84mi2


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    PDF FS30SMJ-2 FS30SMJ-02 84mi2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE FS30SM-6 • V d s s . 300V • ros ON (MAX) .0 .1 7 Q • I D . 30A


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    PDF FS30SM-6

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30UM-2 HIGH-SPEED SWITCHING USE FS30UM-2 • 10V DRIVE • VDSS .100V • rDS ON (MAX) . 100mi2 • I d . 30A


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    PDF FS30UM-2 100mi2 1CH23 571Q2

    C3EN

    Abstract: FS30AS-2
    Text: MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE i FS30AS-2 • 10V DRIVE • VDSS .100V • ros ON (m a x ) . 10O m O


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    PDF FS30AS-2 C3EN FS30AS-2

    "MOSFET A5 VNA

    Abstract: 710023
    Text: MITSUBISHI Pch POWER MOSFET FX30SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 . 15.9 m ax 1.5 | 3.2 mr ¥ b f * © 5 .4 5 0.6 0( • 4 V D R IV E • V ds s .-1 5 0 V


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    PDF FX30SMJ-3 FX30SMJ-3 -150V 10Omii 100ns 57KH2 571Q12 "MOSFET A5 VNA 710023

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30SM-5 HIGH-SPEED SWITCHING USE FS30SM-5 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w r q w e r q V d s s .2 5 0 V


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    PDF FS30SM-5

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI N e h POWER MOSFET j FS30VSJ-2 I î I HIGH-SPEED SWITCHING USE I FS30VSJ-02 OUTLINE DRAWING D im en sio n s in m m 10.5M A X. \ 4.5 "T 1.3 \ J X 2 in un CO Ö Ö -h co CO <j> CD _ 1 U 0.8 • 4V DRIVE • V d s s .


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    PDF FS30VSJ-2 FS30VSJ-02 O-220S

    FX30UMJ-3

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET FX30UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30UMJ-3 OUTLINE DRAWING Dimensions in mm • 4 V D R IV E • V dss .-1 5 0 V . • rDS O N (M AX) . . 100m i2 • Id . . -3 0 A


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    PDF FX30UMJ-3 100ns O-220 FX30UMJ-3