D15P05
Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Text: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using
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RFD15
P05SM,
RFP15
RFD15P05,
RFD15P05SM,
RFP15P05
1e-30
15e-4
47e-3
D15P05
RFP15P05
RFD15P05
RFD15P05SM
TB334
d15p0
rfd15
D15p05 harris
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D15P05
Abstract: RFP15P05 P-channel MOSFET VGS -25V transistor RFD15P05 RFD15P05SM RFD15P05SM9A TB334 RFD15P05 d15p0
Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet January 2002 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD15P05,
RFD15P05SM,
RFP15P05
TA09833.
TB334
D15P05
RFP15P05
P-channel MOSFET VGS -25V
transistor RFD15P05
RFD15P05SM
RFD15P05SM9A
TB334
RFD15P05
d15p0
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D15P05
Abstract: No abstract text available
Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs [ /Title RFD1 5P05, RFD15 P05S M, RFP15 P05 /Subject (15A, 50V, 0.150 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power
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RFD15P05,
RFD15P05SM,
RFP15P05
RFD15
RFP15
O220AB
O251AA
D15P05
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D15P05
Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve
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RFD15P05,
RFD15P05SM,
RFP15P05
TA09833.
TB334
D15P05
RFP15P05
RFD15P05
RFD15P05SM
RFD15P05SM9A
TB334
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RFP15P05
Abstract: RFD15P05SM RFD15P05 RFD15P05SM9A F15P05
Text: RFD15P05, RFD15P05SM, RFP15P05 S E M I C O N D U C T O R 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 50V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model
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RFD15P05,
RFD15P05SM,
RFP15P05
O-220AB
O-251AA
RFP15P05
1e-30
15e-4
RFD15P05SM
RFD15P05
RFD15P05SM9A
F15P05
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FX30KMJ-2
Abstract: 4450 mosfet
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30KMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
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FX30KMJ-2
100ns
FX30KMJ-2
4450 mosfet
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FX30VSJ2
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30VSJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5
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FX30VSJ-2
100ns
FX30VSJ2
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fx30smj2
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX30SMJ-2
100ns
fx30smj2
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fx30umj2
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30UMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30UMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0 3.2
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FX30UMJ-2
100ns
fx30umj2
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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FX30KMJ-3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
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FX30KMJ-3
100ns
FX30KMJ-3
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D15P05
Abstract: No abstract text available
Text: * f* 3 2 S RFD15P05, RFD15P05SM, RFP15P05 -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A,-50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti
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RFD15P05,
RFD15P05SM,
RFP15P05
Rele-30
1e-30
15e-4
47e-3
37e-5)
D15P05
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2671I
Abstract: D15P05 RFP15P05 673E-9
Text: RFD15P05, RFD15P05SM, RFP15P05 f f l H A R R IS CKJ 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D EC TO-22QAB • 15A ,50V ’ *”d s o n = 0 .1 5 0 1 2 • Temperature Compensating PSPICE Model
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RFD15P05,
RFD15P05SM,
RFP15P05
O-22QAB
-251A
15e-4
47e-3
37e-5)
71e-3
41e-6)
2671I
D15P05
RFP15P05
673E-9
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fs30umh-2
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30UMH-2 HIGH-SPEED SWITCHING USE FS30UMH-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. . 1.3 \ j j 3.6 1.0 ÎL 0.8 2.54 • 2.5V DRIVE • VDSS .100V • Integrated Fast Recovery Diode TYP.
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FS30UMH-2
O-220
fs30umh-2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30ASJ-2 HIGH-SPEED SWITCHING USE FS30ASJ-02 * * • 4V DRIVE • VD S S .100V • rDS ON (MAX) . 84mQ
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FS30ASJ-2
FS30ASJ-02
100nH
1CH23
571CH23
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Untitled
Abstract: No abstract text available
Text: I MITSUBISHI Neh POWER MOSFET FS30SMH-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING • 2.5V DRIVE • V D SS .100V • rDS ON (MAX) .93mQ • Id . 30A
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FS30SMH-2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30SMJ-2 HIGH-SPEED SWITCHING USE FS30SMJ-02 • 4V DRIVE • V d s s . 1 o o v • rDS ON (MAX) .84mi2
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FS30SMJ-2
FS30SMJ-02
84mi2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE FS30SM-6 • V d s s . 300V • ros ON (MAX) .0 .1 7 Q • I D . 30A
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FS30SM-6
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30UM-2 HIGH-SPEED SWITCHING USE FS30UM-2 • 10V DRIVE • VDSS .100V • rDS ON (MAX) . 100mi2 • I d . 30A
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FS30UM-2
100mi2
1CH23
571Q2
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C3EN
Abstract: FS30AS-2
Text: MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE i FS30AS-2 • 10V DRIVE • VDSS .100V • ros ON (m a x ) . 10O m O
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FS30AS-2
C3EN
FS30AS-2
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"MOSFET A5 VNA
Abstract: 710023
Text: MITSUBISHI Pch POWER MOSFET FX30SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 . 15.9 m ax 1.5 | 3.2 mr ¥ b f * © 5 .4 5 0.6 0( • 4 V D R IV E • V ds s .-1 5 0 V
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FX30SMJ-3
FX30SMJ-3
-150V
10Omii
100ns
57KH2
571Q12
"MOSFET A5 VNA
710023
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30SM-5 HIGH-SPEED SWITCHING USE FS30SM-5 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w r q w e r q V d s s .2 5 0 V
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FS30SM-5
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI N e h POWER MOSFET j FS30VSJ-2 I î I HIGH-SPEED SWITCHING USE I FS30VSJ-02 OUTLINE DRAWING D im en sio n s in m m 10.5M A X. \ 4.5 "T 1.3 \ J X 2 in un CO Ö Ö -h co CO <j> CD _ 1 U 0.8 • 4V DRIVE • V d s s .
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FS30VSJ-2
FS30VSJ-02
O-220S
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FX30UMJ-3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX30UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30UMJ-3 OUTLINE DRAWING Dimensions in mm • 4 V D R IV E • V dss .-1 5 0 V . • rDS O N (M AX) . . 100m i2 • Id . . -3 0 A
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FX30UMJ-3
100ns
O-220
FX30UMJ-3
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