Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 RELEASED FOR PUBLICATION 20 LOC AF ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 50 P DESCRIPTION LTR A2 DATE RELEASED PER ECO 13-007956 DWN APVD JR 15MAY13 PD D D 19.81 [ .780 ] 1 THIS HOUSING ACCEPTS A 2.79 [.110] SERIES
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15MAY13
18MAY2012
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Untitled
Abstract: No abstract text available
Text: VB60100C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses TO-263AB • High efficiency operation
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VB60100C-M3
O-263AB
J-STD-020,
VB60100C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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HIFREQ
Abstract: No abstract text available
Text: QUAD HIFREQ Series www.vishay.com Vishay Vitramon High Power Surface Mount Multilayer Ceramic Chip Capacitors for High Frequency FEATURES • Case size 0505 and 1111 Available • Ultra-stable, high Q dielectric material • Lead Pb -free terminations code “X”
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
HIFREQ
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Untitled
Abstract: No abstract text available
Text: BAS16-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance 1 2 • AEC-Q101 qualified
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BAS16-G
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
BAS16electronic
2002/95/EC.
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BAS16-E3-08
Abstract: No abstract text available
Text: BAS16 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance 1 2 • AEC-Q101 qualified
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BAS16
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
2002/95/EC.
BAS16-E3-08
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QUAD HIFREQ
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MULTILAYER CERAMIC CHIP CAPACITORS QUAD HiFREQ Capacitors – for RF Applications Multilayer Ceramic Capacitors for RF Applications Key Benefits • • • • • Ultra-low ESD 0.01 Ω @ 150 kHz, 1000 pF Case size 1111
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VMN-PT0371-1306
QUAD HIFREQ
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Untitled
Abstract: No abstract text available
Text: IMBD4148 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diodes 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified 1 • Base P/N-E3 - RoHS-compliant, commercial
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IMBD4148
OT-23,
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
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Untitled
Abstract: No abstract text available
Text: BAS19, BAS20, BAS21 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified 1
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BAS19,
BAS20,
BAS21
OT-23,
AEC-Q101
OT-23
18/10K
10K/box
08/3K
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Untitled
Abstract: No abstract text available
Text: MMBD6050 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified 1 2 • Base P/N-E3 - RoHS-compliant, commercial
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MMBD6050
OT-23,
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
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Untitled
Abstract: No abstract text available
Text: CVPD-034 LVPECL Voltage Controlled Crystal Oscillator 5x7mm SMD 3.3 Volts 5×7mm SMD Actual CVPD-034X-50-155.520 MHz Plot Applications: Digital Video SONET/SDH/DWDM Storage Area Networks Broadband Access Ethernet, Gigabit Ethernet Rev: W Date: 15-May-13 Page 1 of 3
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CVPD-034
CVPD-034X-50-155
15-May-13
50ppm
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Untitled
Abstract: No abstract text available
Text: IMBD4148-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diodes 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade
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PDF
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IMBD4148-G
OT-23,
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
IMBD4148-G3-08
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Untitled
Abstract: No abstract text available
Text: MMBD914-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade
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MMBD914-G
OT-23,
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
MMBD914-G3-08
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Untitled
Abstract: No abstract text available
Text: MMBD7000-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade
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MMBD7000-G
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
MMBD7000-G3-08
MMBD7000-Gelectronic
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Untitled
Abstract: No abstract text available
Text: MBRB1090-M3, MBRB10100-M3 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Lower power losses, high efficiency • Low forward voltage drop K • High forward surge capability
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MBRB1090-M3,
MBRB10100-M3
O-263AB
J-STD-020,
MBRB1090
MBRB10100
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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|
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Untitled
Abstract: No abstract text available
Text: IMBD4448 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified 1 • Base P/N-E3 - RoHS-compliant, commercial
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IMBD4448
OT-23,
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
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Untitled
Abstract: No abstract text available
Text: MMBD6050-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade
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Original
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PDF
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MMBD6050-G
OT-23,
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
MMBD6050-G3-08
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Untitled
Abstract: No abstract text available
Text: IMBD4448-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade
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Original
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PDF
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IMBD4448-G
OT-23,
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
IMBD4448-G3-08
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Untitled
Abstract: No abstract text available
Text: VB20100C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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VB20100C-M3
O-263AB
J-STD-020,
VB20100C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VB30100S-M3 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS TO-263AB • High efficiency operation
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VB30100S-M3
O-263AB
J-STD-020,
VB30100S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VB40100C
Abstract: No abstract text available
Text: VB40100C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-263AB • High efficiency operation
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Original
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PDF
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VB40100C-M3
O-263AB
J-STD-020,
VB40100C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VB40100C
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Untitled
Abstract: No abstract text available
Text: VB30100C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VB30100C-M3
O-263AB
J-STD-020,
VB30100C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: MMBD7000 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified 1 • Base P/N-E3 - RoHS-compliant, commercial
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Original
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PDF
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MMBD7000
AEC-Q101
OT-23
18/10K
10K/box
08/3K
15K/box
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: MBRB2090CT-M3, MBRB20100CT-M3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Lower power losses, high efficiency • Low forward voltage drop
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Original
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PDF
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MBRB2090CT-M3,
MBRB20100CT-M3
O-263AB
J-STD-020,
MBRB2090CT
MBRB20100CT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VB30100S-M3 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS TO-263AB • High efficiency operation
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Original
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PDF
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VB30100S-M3
O-263AB
J-STD-020,
VB30100S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|