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Vishay Dale WSLP1206R0150DEA RES 0.015 OHM 0.5% 1W 1206
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DigiKey	WSLP1206R0150DEA	Cut Tape	10,254		1	1 $2.89 10 $1.705 100 $1.0658 1000 $0.71875 10000 $0.71875	Buy Now
	WSLP1206R0150DEA	Digi-Reel	10,254		1	1 $2.89 10 $1.705 100 $1.0658 1000 $0.71875 10000 $0.71875	Buy Now
	WSLP1206R0150DEA	Reel	8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.71875	Buy Now
RS	WSLP1206R0150DEA	Bulk			1,000	1 - 10 - 100 - 1000 $0.94 10000 $0.84	Get Quote
NIDEC Components SA-5150DE SWITCH ROTARY DIP HEX 0.1A 5V
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DigiKey	SA-5150DE	Bulk			50	1 - 10 - 100 $11.8736 1000 $11.8736 10000 $11.8736	Buy Now
Vishay Dale WSR5R0150DEA RES 0.015 OHM 0.5% 5W 4527
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DigiKey	WSR5R0150DEA	Reel			1,500	1 - 10 - 100 - 1000 - 10000 $2.37085	Buy Now
RS	WSR5R0150DEA	Bulk			1,500	1 - 10 - 100 - 1000 - 10000 $3.1	Get Quote
Vishay Dale WSR2R0150DEA RES 0.015 OHM 0.5% 2W 4527
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DigiKey	WSR2R0150DEA	Reel			1,500	1 - 10 - 100 - 1000 - 10000 $1.14756	Buy Now
RS	WSR2R0150DEA	Bulk			1,500	1 - 10 - 100 - 1000 - 10000 $1.56	Get Quote
Microchip Technology Inc 1EZ150DE3-TR12 DIODE ZENER 150V 1W DO204AL
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DigiKey	1EZ150DE3-TR12	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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150DE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CDMC10D50/T150 Features • Metal compound molding type construction. • Magnetically shielded. • Qualified AEC-Q200 • Suitable for Large Current • Operating temperature range: - 40deg C～+150deg C including coil’s self temperature rise Applications	Original	PDF	CDMC10D50/T150 AEC-Q200 40deg 150deg CDMC10D50T150NP-1R1MC CDMC10D50T150NP-1R6MC CDMC10D50T150NP-2R2MC CDMC10D50T150NP-2R7MC CDMC10D50T150NP-3R3MC CDMC10D50T150NP-4R3MC
Untitled Abstract: No abstract text available Text: CDMC50D38/T150 Features • Metal compound molding type construction. • Magnetically shielded. • Qualified AEC-Q200 • Suitable for Large Current • Operating temperature range: - 40deg C～+150deg C including coil’s self temperature rise Applications	Original	PDF	CDMC50D38/T150 AEC-Q200 40deg 150deg CDMC50D38/T150NP
alternator LIN protocol 2.0 Abstract: voltage regulation of alternator using microcontroller LIN 2.0 alternator ecu alternator voltage regulator TC80310 Alternator regulator lin protocol specification automotive alternator voltage regulator LIN alternator diode numbers ISO-7637-1 alternator circuit diagram Text: Freescale Semiconductor Advance Information Document Number: TC80310 Rev 3.0, 8/2012 Alternator Regulator with LIN 80310 The 80310 is an integrated circuit intended to regulate the output voltage of an automotive alternator. The IC supplies a current via a high side MOSFET to the excitation	Original	PDF	TC80310 STR0326182960 alternator LIN protocol 2.0 voltage regulation of alternator using microcontroller LIN 2.0 alternator ecu alternator voltage regulator Alternator regulator lin protocol specification automotive alternator voltage regulator LIN alternator diode numbers ISO-7637-1 alternator circuit diagram
GRM31 Murata Abstract: CC195 ST1S40 h3dg qp2n ST1S40IPUR MURATA GRM31 C3225X7RE106K ST1S40IDR s08b Text: ST1S40 3 A DC step-down switching regulator Features • 3 A DC output current ■ 4.0 V to 18 V input voltage ■ Output voltage adjustable from 0.8 V ■ 850 kHz switching frequency ■ Internal soft-start ■ Integrated 95 mΩ and 69 mΩ Power MOSFETs ■	Original	PDF	ST1S40 ST1S40 GRM31 Murata CC195 h3dg qp2n ST1S40IPUR MURATA GRM31 C3225X7RE106K ST1S40IDR s08b
Untitled Abstract: No abstract text available Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC	Original	PDF	BC327, BC327A, BC328 BC337, BC337A, BC338 C-120
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.	Original	PDF	RD10MMS2 870MHz RD10MMS2 12Wtyp, 870MHz 800MHz-band
optical sensor Abstract: amplifire Circuit current amplifire circuit diagram 5v infrared camera Text: Visible Radiant Optical Sensor /Data Sheet TDK Visible Radiant Optical Sensor is the photo-IC which uses an amorphous silicone semiconductor technology. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015A1 has currentamplifire in it. BCS2015A1 is for surface mounthing.	Original	PDF	BCS2015A1 245deg 255deg 230deg 180deg 30sec 40sec 150deg optical sensor amplifire Circuit current amplifire circuit diagram 5v infrared camera
Untitled Abstract: No abstract text available Text: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.	Original	PDF	R2A20057BM R03DS0069EJ0100 R2A20057BM TH05-3H103F NCP15WF104F03RC R03DS0069EJ0100
circuit diagram of luminous inverter Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances	Original	PDF	BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
BC337A Abstract: No abstract text available Text: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	BC337A 800mA. BC337A
RD02MUS1 Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
RD07MVS1 Abstract: RD07MVS1-101 T112 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor	Original	PDF	RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems
RD07MVS1 Abstract: RD07MVS1B T112 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05	Original	PDF	RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems
RD30HVF1 Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 RD30HVF1-101 rf power transistor rd30hvf1 100OHM

RD01MUS1-101 Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 c111m RD01MSU1 3M Touch Systems
RD07MUS2B Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
100OHM Abstract: RD30HUF1 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.	Original	PDF	RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 100OHM
Ceramic Capacitors 104 Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1 Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.	Original	PDF	K99E-27 Ceramic Capacitors 104 mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
BCY58 Abstract: TYP50 BCY59 X10-4 BCY58-7 BCY58-9 bcy58-8 BCY581 cdil bcy58-8 BCY588 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS	Original	PDF	BCY58, BCY59 BCY78/79 BCY58 C-120 BCY58 TYP50 BCY59 X10-4 BCY58-7 BCY58-9 bcy58-8 BCY581 cdil bcy58-8 BCY588
Untitled Abstract: No abstract text available Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted	Original	PDF	BCW66G 500mA. OT-23 150degrees BCW66G
pn4117a Abstract: No abstract text available Text: PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources. • Sourced from process 53.	Original	PDF	PN4117A 150degrees PN4117A ND26Z
MLX91206 Abstract: 952 hall sensor Text: MLX91206 Triaxis Current Sensor IC Features and Benefits Application Examples Programmable high speed current sensor IC Wideband: DC to 90kHz Short response time Tria⊗is hall technology Programmable linear transfer characteristic Selectable analog ratiometric output	Original	PDF	MLX91206 90kHz MLX91206 15nVss, 952 hall sensor
Tyre pressure monitoring system block diagram Abstract: lanskroun avx taj AVX Tantalum Electrolytic Capacitors TS16949 electronic control unit engine Automotive capacitors electronic stability control cars tyre pressure monitoring airbag Text: Tantalum and OxiCap niobium oxide capacitors deliver enhanced reliability, wide temperature range and low leakage for automotive applications R. Faltus AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic email: [email protected]	Original	PDF
d10n05 Abstract: IN5240B RFD10N05SM RFD10N05 AN7254 AN7260 92CS-42660 Text: Power MegaFETs- RFD10N05, RFD10N05SM File N um b er 2107 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 10 A , 50 V rD s (o n ) = 0 .1 f i N -C H A N N E L E N H A N C E M E N T M OD E Features: • S ingle pu lse avalanche e n ergy ra ted	OCR Scan	PDF	RFD10N05, RFD10N05SM RFD10N05 RFD10N05SM 92cs-429 AN7254 AN7260. IN5240B 92cs-42922 92cs-42659 d10n05 IN5240B AN7260 92CS-42660

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150DE Search Results

150DE Price and Stock

Vishay Dale WSLP1206R0150DEA

NIDEC Components SA-5150DE

Vishay Dale WSR5R0150DEA

Vishay Dale WSR2R0150DEA

Microchip Technology Inc 1EZ150DE3-TR12

150DE Datasheets Context Search

Untitled

Untitled

alternator LIN protocol 2.0

GRM31 Murata

Untitled

Untitled

optical sensor

Untitled

circuit diagram of luminous inverter

BC337A

RD02MUS1

RD07MVS1

RD07MVS1

RD30HVF1

RD01MUS1-101

RD07MUS2B

100OHM

Ceramic Capacitors 104

BCY58

Untitled

pn4117a

MLX91206

Tyre pressure monitoring system block diagram

d10n05