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    150A GTO 2000 V Search Results

    150A GTO 2000 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP1CS07DWA-00#W0 Renesas Electronics Corporation IGBT 1250V 150A Wafer Visit Renesas Electronics Corporation
    RJP1CS27DWS-80#W0 Renesas Electronics Corporation IGBT 1250V 150A Sawn Visit Renesas Electronics Corporation
    RJP1CS27DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 150A Wafer Visit Renesas Electronics Corporation
    RJP1CS07DWT-00#X0 Renesas Electronics Corporation IGBT 1250V 150A Chip Visit Renesas Electronics Corporation
    RJP1CS27DWT-80#X0 Renesas Electronics Corporation IGBT 1250V 150A Chip Visit Renesas Electronics Corporation

    150A GTO 2000 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TGS 2600

    Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
    Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse


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    PDF DGT409BCA DS4414-4 DGT409 TGS 2600 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive

    RURU15060

    Abstract: No abstract text available
    Text: RURU15060 Data Sheet January 2000 File Number 3201.3 150A, 600V Ultrafast Diode Features The RURU15060 is an ultrafast diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial


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    PDF RURU15060 RURU15060

    RURU150120

    Abstract: No abstract text available
    Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial


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    PDF RURU150120 RURU150120 200ns) 200ns

    rhr150120

    Abstract: RHRU150120
    Text: RHRU150120 Data Sheet Title HR 501 bt 0A, 00V pert ode utho rpoon, pert al odes vache ergy ted, itch wer pes, wer File Number 4049.1 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns). It has half the recovery time of


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    PDF RHRU150120 RHRU150120 100ns) 100ns rhr150120

    RHRU15060

    Abstract: No abstract text available
    Text: RHRU15060 Data Sheet Title HR 506 bt 0A, 0V pert ode utho eyrds 0A, 0V pert ode, errpoon, pert odes vache ergy ted, itch wer pes, wer itch January 2000 File Number 3089.3 150A, 600V Hyperfast Diode Features The RHRU15060 is a hyperfast diode with soft recovery


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    PDF RHRU15060 RHRU15060

    TA09925

    Abstract: RURU15060
    Text: RURU15060 Data Sheet January 2002 150A, 600V Ultrafast Diode Features The RURU15060 is an ultrafast diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RURU15060 RURU15060 175oC TA09925

    RURU150120

    Abstract: No abstract text available
    Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RURU150120 RURU150120 200ns) 200ns 175oC

    00365 r

    Abstract: eupec T 271 N 150a gto
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 271 S 45 T 2 center holes ∅ 3,5 x 4,0 C A SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 271 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    150a gto

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 901 S 35.45 T ø 100 max. A C 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 901 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    Untitled

    Abstract: No abstract text available
    Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse


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    PDF DGT409BCA DS4414-4 DGT409 000V/Â

    TGS 2600

    Abstract: GTO thyristor 3000V 800A 150a gto DGT409BCA DGT409BCA6565 TGS 200
    Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse


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    PDF DGT409BCA DS4414-4 DGT409 TGS 2600 GTO thyristor 3000V 800A 150a gto DGT409BCA DGT409BCA6565 TGS 200

    150a gto

    Abstract: fast 1000V 1000A
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage


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    Untitled

    Abstract: No abstract text available
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for strobe


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    PDF SGR20N40L SGU20N40L

    150a gto

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    150a gto

    Abstract: 600 801
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage


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    diode ir 0406

    Abstract: 150a gto DIODE 0406
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    200w dc to ac inverter Circuit diagram

    Abstract: diagram UPS 200w FM2G150US60
    Text: IGBT FM2G150US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is


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    PDF FM2G150US60 200w dc to ac inverter Circuit diagram diagram UPS 200w FM2G150US60

    150a gto

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage


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    150a gto

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage


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    150a gto

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    150a gto

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    Untitled

    Abstract: No abstract text available
    Text: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter


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    PDF DGT409BCA DS4414-4 LN25790) DGT409BCA 000V/Â

    RHR150120

    Abstract: RHRU150120 RHR1501
    Text: RHRU150120 Data Sheet January 2002 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    PDF RHRU150120 RHRU150120 100ns) 100ns 175oC RHR150120 RHR1501

    DGT409BCA

    Abstract: TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes
    Text: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter


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    PDF DGT409BCA DS4414-4 LN25790) DGT409BCA TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes