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    15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Search Results

    15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TGA2594 27-31GHz 5W GaN Power Amplifier Applications • Satellite Communications Product Features          Functional Block Diagram Frequency Range: 27 – 31GHz Psat: 37dBm typical across frequency PAE: 28% Small Signal Gain: 23dB


    Original     		PDF TGA2594 27-31GHz 31GHz 37dBm 25dBm/tone: -36dBc -45dBc 140mA, TGA2594

    FMM5826X

    Abstract: Ka-band ED-4701
    Text: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications


    Original     		PDF FMM5826X 37dBm FMM5826X 1906B, Ka-band ED-4701

    CGB8002-SC

    Abstract: CGB8002-SC-0G00 CGB8002-SC-0G0T
    Text: DC-2.8 GHz InGaP HBT 3.3V, Matched Gain Block Amplifier April 2008 - Rev 28-Apr-08 CGB8002-SC Features Functional Block Diagram SOT-89 14 dBm Linear Power @ 2140 MHz 17 dB Gain @ 2140 MHz 15 dB Gain @ 2700 MHz 37dBm OIP3 @ 2700 MHz 22 dBm P1dB @ 2140 MHz


    Original     		PDF 28-Apr-08 CGB8002-SC 37dBm OT-89 CGB8002-SC CGB8002-SC-0G00 CGB8002-SC-0G0T

    Bookham

    Abstract: NN12 P35-5130-000-200 15 GHz power amplifier Output Power 37dBm
    Text: Data sheet Engineering Datasheet 8.5 – 10.5GHz Power Amplifier Features • 15dB Gain Typical • P-1dB; 37dBm typical @ 9.5GHz The P35-5130-000-200 is a high performance 8.510.5GHz Gallium Arsenide power amplifier, capable of output powers of 5 Watts. The die is fabricated using Caswell Technology's 0.20µm


    Original     		PDF 37dBm P35-5130-000-200 P35-5130-000-200 Retu56 462/SM/03248/200 Bookham NN12 15 GHz power amplifier Output Power 37dBm

    "p1db 37dbm"

    Abstract: TGA1172
    Text: Advance Product Information March 21, 2000 27 - 32 GHz 1W Power Amplifier TGA1172 Key Features • 0.25 um pHEMT Technology • 18 dB Gain at 28 GHz • 29 dBm Nominal P1dB • 37dBm OTOI typical at 28GHz • Input/Output RL < -10 dB • Bias 6 - 7V @ 630 mA


    Original     		PDF TGA1172 37dBm 28GHz 0007-inch "p1db 37dbm" TGA1172

    VP610

    Abstract: TGA4502-EPU
    Text: Advance Product Information June 18th, 2002 17 - 27 GHz High Power Amplifier TGA4502-EPU Key Features • • • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 29 dBm Nominal P1dB 37dBm Nominal OTOI 15 dB Nominal Return Loss Bias 7V @ 750 mA


    Original     		PDF TGA4502-EPU 37dBm 750mA 0007-inch VP610 TGA4502-EPU

    2068d

    Abstract: 05353 2068 D wafer 60g 3 diamonds manual 44033 amplifier FMA3011 MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm d2bb
    Text: FMA3011 12.7-16GHZ MMIC POWER AMPLIFIER Datasheet v3.2 FUNCTIONAL SCHEMATIC: FEATURES: • • • • • Balanced Topology 37dBm OIP3 30dB Gain Input Return Loss <-15dB Output Return Loss <-15dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3011 is a high performance 12.716GHz Gallium Arsenide monolithic power


    Original     		PDF FMA3011 7-16GHZ 37dBm -15dB FMA3011 716GHz coupl60g. 2068d 05353 2068 D wafer 60g 3 diamonds manual 44033 amplifier MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm d2bb

    ImS21

    Abstract: FMA3011 15100000 214-3556 2068d
    Text: FMA3011 Datasheet v4.0 12.7-16GHZ MMIC POWER AMPLIFIER FUNCTIONAL SCHEMATIC: FEATURES: • • • • • Balanced Topology 37dBm OIP3 30dB Gain Input Return Loss <-15dB Output Return Loss <-15dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3011 is a high performance 12.716GHz Gallium Arsenide monolithic power


    Original     		PDF FMA3011 7-16GHZ 37dBm -15dB FMA3011 716GHz ImS21 15100000 214-3556 2068d

    mmics

    Abstract: No abstract text available
    Text: AM204437WM-BM-R AM204437WM-FM-R Aug 2010 Rev 4 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM204437WM-BM/FM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain and 37dBm output power over the 2.2 to 4.2GHz band. This MMIC is in a ceramic package with both RF and DC leads at the


    Original     		PDF AM204437WM-BM-R AM204437WM-FM-R AM204437WM-BM/FM-R 37dBm AN700 AM204437WM-FM-R 100mA, 300mA 1400mA mmics

    2068D

    Abstract: 2068 d ImS21 FMA3011 MIL-HDBK-263 141259 214-3556
    Text: FMA3011 Preliminary Datasheet v2.1 12.7-16GHZ MMIC POWER AMPLIFIER FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Balanced Topology 37dBm OIP3 30dB Gain Input Return Loss < -15dB Output Return Loss < -15dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3011 is a high performance 12.716GHz Gallium Arsenide monolithic power


    Original     		PDF FMA3011 7-16GHZ 37dBm -15dB FMA3011 716GHz 22A114. MIL-STD-1686 MIL-HDBK-263. 2068D 2068 d ImS21 MIL-HDBK-263 141259 214-3556

    Untitled

    Abstract: No abstract text available
    Text: AM204437WM-BM-R March 2008 Rev. 2 DESCRIPTION AMCOM’s AM204437WM-BM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. This MMIC is RoHS compliant.


    Original     		PDF AM204437WM-BM-R AM204437WM-BM-R 37dBm 50-ohm 1800mA, 10mils 100mA, 300mA 1400mA

    Untitled

    Abstract: No abstract text available
    Text: AM204437WM-BM-R August 2007 Rev. 1 DESCRIPTION AMCOM’s AM204437WM-BM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the


    Original     		PDF AM204437WM-BM-R AM204437WM-BM-R 37dBm 50-ohm 1800mA, 10mils 100mA, 300mA 1400mA

    Untitled

    Abstract: No abstract text available
    Text: TGA2586-FL 7.9 – 8.4 GHz 50W GaN Power Amplifier Applications • Satellite Communications Product Features         Functional Block Diagram Frequency Range: 7.9 – 8.4 GHz PSAT: 47 dBm CW P1dB: 43 dBm PAE: 36% Small Signal Gain: 14 dB


    Original     		PDF TGA2586-FL TGA2586-FL 47dBm

    Untitled

    Abstract: No abstract text available
    Text: AM204437WM-BM-R AM204437WM-FM-R December 2008 Rev. 3 DESCRIPTION AMCOM’s AM204437WM-BM-R and AM204437WM-FM-R are part of the GaAs MMIC power amplifier series. Both MMICs have 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. These MMIC are in a ceramic


    Original     		PDF AM204437WM-BM-R AM204437WM-FM-R AM204437WM-BM-R AM204437WM-FM-R 37dBm 10mils 100mA, 300mA 1400mA

    diode p1000

    Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector


    Original     		PDF P1000 01-May-02 MIL-STD-883 diode p1000 P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram

    B1001

    Abstract: XB1001 XP1000 XU1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF B1001 10-May-03 MIL-STD-883 B1001 XB1001 XP1000 XU1000

    B1000

    Abstract: Mimix xb1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF 10-May-03 B1000 MIL-STD-883 Mimix xb1000

    B1000

    Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF B1000 01-May-02 MIL-STD-883 B1000 Mimix xb1000 XU1000 pHEMT transistor MTBF

    XB1001

    Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		PDF B1001 01-May-02 MIL-STD-883 XB1001 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS

    TA081-083-30-37

    Abstract: No abstract text available
    Text: TA081-083-30-37 REV1_20040412 8.1 – 8.3 GHz 37dBm Power Amplifier FEATURES • P1dB: 37 dBm • Noise Figure: 5 dB • Small Signal Gain: 30 dB • Bias Condition: 3.7A @ 12 V ELECTRICAL SPECIFICATIONS SYMBOL DESCRIPTION MIN Frequency Range 8.1 SSG Small Signal Gain @ 25°C


    Original     		PDF TA081-083-30-37 37dBm TA081-083-30-37

    Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications

    Abstract: CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR
    Text: Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J. Millon1, Simon M. Wood, Raymond S. Pengelly Cree Inc. 3026 E Cornwallis Rd Research Triangle Park, NC 27709, USA 1 [email protected] Abstract — 2.5 and 5 Watt average power 15 and 30 Watt peak


    Original     		PDF 5030-TB Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR

    AMMC-6345

    Abstract: AMMC-6430
    Text: Agilent AMMC-6430 25 – 33 GHz Power Amplifier Data Sheet Features • Wide frequency range: 25 - 33 GHz • High gain: 17 dB • Power: @30 GHz, P-1dB=29 dBm Description The AMMC-6430 MMIC is a broadband nearly 1W power amplifier designed for use in transmitters that operate in


    Original     		PDF AMMC-6430 AMMC-6430 25GHz 33GHz. 37dBm. 30GHz 29dBm 5989-1702EN AMMC-6345

    AMMC-6345

    Abstract: AMMC-6430
    Text: AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6430 MMIC is a broadband nearly 1W power


    Original     		PDF AMMC-6430 25GHz 33GHz. 37dBm. 30GHz 29dBm AMMC-6430-W10 AMMC-6430-W50 AMMC-6345

    Untitled

    Abstract: No abstract text available
    Text: AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6430 MMIC is a broadband nearly 1W power


    Original     		PDF AMMC-6430 25GHz 33GHz. 37dBm. 30GHz 29dBm AMMC-6430-W10 AMMC-6430-W50