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TDK Electronics B65814N1008D001 BOBBIN COIL FORMER RM 10
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DigiKey	B65814N1008D001	Box	2,399		1	1 $1.7 10 $1.468 100 $1.0568 1000 $0.8155 10000 $0.8155	Buy Now
Newark	B65814N1008D001	Bulk	212		1	1 $1.68 10 $1.46 100 $0.987 1000 $0.867 10000 $0.867	Buy Now
TME	B65814N1008D001				800	1 - 10 - 100 - 1000 $0.95 10000 $0.95	Get Quote
TDK Electronics B65814N1008D002 BOBBIN COIL FORMER RM 10
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DigiKey	B65814N1008D002	Box	1,211		1	1 $2.02 10 $1.389 100 $1.0484 1000 $0.8155 10000 $0.8155	Buy Now
Newark	B65814N1008D002	Bulk	4		1	1 $1.56 10 $1.37 100 $1.04 1000 $1.01 10000 $1.01	Buy Now
IXYS Corporation IXFH14N100 MOSFET N-CH 1000V 14A TO247AD
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DigiKey	IXFH14N100	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTH14N100 MOSFET N-CH 1000V 14A TO247
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DigiKey	IXTH14N100	Tube			30	1 - 10 - 100 $9.77067 1000 $9.77067 10000 $9.77067	Buy Now
Mouser Electronics	IXTH14N100					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFT14N100 MOSFET N-CH 1000V 14A TO268
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DigiKey	IXFT14N100	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IXFT14N100		148		1	1 - 10 - 100 $39.87 1000 $37.21 10000 $37.21	Buy Now

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14N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFK14N100Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 14N100Q IXFK 14N100Q IXFT 14N100Q Q-Class VDSS = ID25 = RDS on = 1000 V 14 A 0.75 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings	Original	PDF	14N100Q 14N100Q O-247 O-264 O-268 IXFK14N100Q
Untitled Abstract: No abstract text available Text: IXTH 14N100 VDSS MegaMOSTMFET ID25 RDS on = 1000 V = 14 A = 0.82 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30	Original	PDF	14N100 O-247
TO-247 AD Abstract: No abstract text available Text: IXTH 14N100 VDSS MegaMOSTMFET ID25 RDS on = 1000 V = 14 A = 0.82 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V	Original	PDF	14N100 O-247 TO-247 AD
15N100 Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1 Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings	Original	PDF	IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 14N100 15N100 15N100 IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Untitled Abstract: No abstract text available Text: 14N100 VDSS MegaMOSTMFET ID25 RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 14 A IDM	Original	PDF	IXTH14N100 O-247
Untitled Abstract: No abstract text available Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings	OCR Scan	PDF	IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 O-247 to150
D1488 Abstract: TO-247 AD Text: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings	OCR Scan	PDF	IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 10TransientThermallmpedance D1488 TO-247 AD
15N100 Abstract: 15n10 14N100 Text: OIXYS HiPerFET Power MOSFETs D ^D S S IXFH/IXFT/14N100 IXFH/IXFT/IXFX15N100 N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on n 1000 V 14 A 0.75 Q 1000 V 15 A 0.7 trr < 200 ns Preliminary data m m m ÊSm Symbol Test Conditions	OCR Scan	PDF	IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 15N100 O-247 247TM 15n10
15N100 Abstract: No abstract text available Text: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings	OCR Scan	PDF	IXFH/IXFX15 14N100 15N100 K30Ts
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	PDF	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
scr 106d Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226 Text: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007	OCR Scan	PDF	to-18 2n876 2n884 2n877 2n885 2n3001 2n3005 2nw121 tag520f tag521f scr 106d SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
IXTN 36N50 C Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50 Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20	OCR Scan	PDF	O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
IRFP 260 M Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240 Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH	OCR Scan	PDF	67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240
Untitled Abstract: No abstract text available Text: IX TH 14N 100 M egaM OS FET V DSS = to o o v ^D25 = 14 A R — 0.82 Q — D S on N-Channel Enhancement Mode Sym bol Test Conditions Maximum Ratings V OSS T a = 2 5°C to 150°C 1000 V V« T j = 2 5°C to 150°C; R as = 1 MS2 1000 V Vcs v GSM C o ntinuous	OCR Scan	PDF	O-247 C2-95
scr tag 2 200 Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138 Text: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE	OCR Scan	PDF	2N2322 2N2322A BTX30- 2N2323 2N2323A BTX30-100 2N2324 2N2324A TAG611-100 TAG612-100 scr tag 2 200 scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
BSTB0246 Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D Text: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA	OCR Scan	PDF	55-500M 55-600M 55-700M 55-800M 2-800RU 92-1000RM 92-1000RU 16N-400DM 16N-400DU 16N-600DM BSTB0246 BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
IRFP 640 Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100 Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140	OCR Scan	PDF	135XTP 01N100 1N100 2N100 2N100 100X2 01N100X3 O-251, O-220AB IRFP 640 IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
11n80 Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088	OCR Scan	PDF	O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	PDF	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

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14N100 Search Results

14N100 Price and Stock

TDK Electronics B65814N1008D001

TDK Electronics B65814N1008D002

IXYS Corporation IXFH14N100

IXYS Corporation IXTH14N100

IXYS Corporation IXFT14N100

14N100 Datasheets Context Search

IXFK14N100Q

Untitled

TO-247 AD

15N100

C1162

sd 20n60

7n60b

7N60B equivalent

Untitled

Untitled

D1488

15N100

15N100

75N1

ixys ixfn 55n50

scr 106d

IXTN 36N50 C

IRFP 260 M

Untitled

scr tag 2 200

BSTB0246

IRFP 640

11n80

8n80