Untitled
Abstract: No abstract text available
Text: plerowTM APL0146-R PLL Synthesizer Module • 5 dBm Output Level at 146MHz The plerowTM PLL synthesizer module was designed for use in wireless and wireline systems in a wide range of frequency from 50 MHz to 6 GHz. ASB’s PLL provides exceptionally low spurious and phase noise
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APL0146-R
146MHz
100MHz
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Untitled
Abstract: No abstract text available
Text: ICS9342 Integrated Circuit Systems, Inc. Preliminary Product Preview 133MHz Clock Generator and Integrated Buffer for PowerPC Recommended Application: Power PC System Clock Output Features: • 12- CPUs @3.3V, up to 146MHz • 1- PCIREF @3.3V, up to 73MHz
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ICS9342
133MHz
146MHz
73MHz
64MHz
318MHz
146MHz
318MHz
ICS9342yF-T
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7493 pin diagram
Abstract: cpu11 ICS9112-17 133M 318M ICS9342 7493 logic diagram
Text: Integrated Circuit Systems, Inc. ICS9342 133MHz Clock Generator and Integrated Buffer for PowerPC Recommended Application: Power PC System Clock Output Features: • 12- CPUs @ 3.3V, up to 146MHz • 1- PCIREF @ 3.3V, up to 73MHz • 1 - OUT 3.3V, 64MHz
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ICS9342
133MHz
146MHz
73MHz
64MHz
318MHz
146MHz
318MHz
ICS9342yF-T
7493 pin diagram
cpu11
ICS9112-17
133M
318M
ICS9342
7493 logic diagram
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RD30HVF1
Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
RD30HVF1-101
rf power transistor rd30hvf1
100OHM
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ADC11DL066
Abstract: ADC12D040 ADC12DL066 ADC12DL066CIVS ADC12DL066EVAL DA11 LM4051CIM3-ADJ LMH6702
Text: ADC12DL066 Dual 12-Bit, 66 MSPS, 450 MHz Input Bandwidth A/D Converter w/Internal Reference General Description Features The ADC12DL066 is a dual, low power monolithic CMOS analog-to-digital converter capable of converting analog input signals into 12-bit digital words at 66 Megasamples per
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ADC12DL066
12-Bit,
ADC12DL066
12-bit
ADC11DL066
ADC12D040
ADC12DL066CIVS
ADC12DL066EVAL
DA11
LM4051CIM3-ADJ
LMH6702
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RD02MUS1
Abstract: 146MHz 488-MHz
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017-B Date : 23th Dec. 2002 Rev.date : 7thJan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1 RF characteristics data
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AN-UHF-017-B
RD02MUS1
RD02MUS1.
RD02MUS1:
023XA"
146MHz
146MHz)
175MHz
175MHz)
440MHz
146MHz
488-MHz
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AN1393
Abstract: ADC12DL065 ADC12L066 ADC12L080 AN-1393 LMH6550 12L080
Text: ெࡔࡔॆӷິࠅ༹ڞ ᆌᆩጀAN1393 Loren Siebert 20065ሆ ስፌॅٷݣݴֶڦഗઠൻۯᅃ߲ఇె ຕጴገ࣑ഗ Nyquist֑ᄣۨă Nyquistஃ׃Ljܔ႑ࡽ֑ᄣڦೕ ࢇߛڦֶٷݣݴഗࣷߴԈࡤߛఇెຕጴገ࣑
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AN1393
ADC12DL065
12L080
64MHz,
AN-1393
AN201592
300Hz
3000Hz
24MHz
AN1393
ADC12DL065
ADC12L066
ADC12L080
AN-1393
LMH6550
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rd02mus1
Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
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AN-UHF-017
RD02MUS1
RD02MUS1.
RD02MUS1:
023XA"
146MHz
175MHz
440MHz
450MHz
470MHz
AN-UHF-017
146MHz
488-MHz
RD02MUS1 equivalent
ANUHF017
MITSUBISHI APPLICATION NOTE RF POWER
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3
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RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
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RD30HVF1
Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
100OHM
RD30HVF1-101
rd30hvf
A 1469 mosfet
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TRANSISTOR BD 689
Abstract: No abstract text available
Text: Part Number: Integra IDM165L650 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT VHF-Band Pulsed Power Transistor The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device
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IDM165L650
IDM165L650
IDM165L650-
TRANSISTOR BD 689
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MITSUBISHI RF POWER MOS FET
Abstract: 071J
Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3
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RD30HVF1
175MHz
RD30HVF1
RD30HVF1-101
Oct2011
MITSUBISHI RF POWER MOS FET
071J
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CLC5903
Abstract: EDGE22 ADC12DL080
Text: DESIGN idea Expert tips, tricks, and techniques for analog designs 中間周波 IF サンプリング方式を用いた レシーバ・アーキテクチャ by Mark Rives, Principal Applications Engineer 本稿は中間周波(IF)サンプリング方式を用いて構
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200kHz13MHz
244MHz)
Fs/20Hz
ADC12DL080
ADC12DL0806
13MHz
78MSPS(
39MHz
78MHz
CLC5903
EDGE22
ADC12DL080
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TRANSISTOR SMD MARKING CODE w2
Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
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212J
Abstract: rd30hvf
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
RD30HVF1
175MHz
RD30HVF1-101
212J
rd30hvf
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M67746
Abstract: 146MHz t6060 144-148MHZ 300MW
Text: MITSUBISHI RF POWER MODULE M67746 144-148MHz, 12.5V, 60W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 2 60±0.5 7.25±0.8 3 51.5±0.5 1 4 2-R2±0.5 1 2 3 4 5 5 φ 0.82±0.15 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY
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M67746
144-148MHz,
VCC112
46MHz
146MHz
300mW
M67746
146MHz
t6060
144-148MHZ
300MW
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transistor D 1666
Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
transistor D 1666
MITSUBISHI RF POWER MOS FET
RD30HVF1-101
mos 1718
transistor A 564
rf power transistor rd30hvf1
A 1469 mosfet
transistor D 1762
1633 MOSFET
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146MHz
Abstract: M68750 144-148MHZ
Text: MITSUBISHI RF POWER MODULE M68750 144-148MHz, 12.5V, 27W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±1 2 60±1 3 4 51.5±0.5 2 R1.5 1 4 2-R2±0.3 1 5 2 3 4 5 5 φ 0.45±0.15 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY
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M68750
144-148MHz,
VCC112
146MHz,
146MHz
M68750
144-148MHZ
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Untitled
Abstract: No abstract text available
Text: ADC12DL066 www.ti.com SNAS188G – FEBRUARY 2004 – REVISED FEBRUARY 2013 ADC12DL066 Dual 12-Bit, 66 Msps, 450 MHz Input Bandwidth A/D Converter w/Internal Reference Check for Samples: ADC12DL066 FEATURES DESCRIPTION • The ADC12DL066 is a dual, low power monolithic
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ADC12DL066
SNAS188G
ADC12DL066
12-Bit,
ADC12D040
12-bit
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SJ 2252 CIRCUIT DIAGRAM
Abstract: sj 2252 ic DB4170
Text: % M i c r o Linear ML2252, ML2259 \x ? Compatible 8-Bit A / D Converters with 2- or 8-Channel Multiplexer GENERAL DESCRIPTION FEATURES The ML2252 and ML2259 combine an 8 -bit A/ D converter, 2 -or 8 -channel analog multiplexer, and a microprocessor compatible 8 -bit parallel interface and control logic in a sin
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ML2252,
ML2259
ML2252
ML2259
20-PIN
ML2252BMJ
ML2252BIJ
ML2252BCP
ML2252BCQ
ML2252CI)
SJ 2252 CIRCUIT DIAGRAM
sj 2252 ic
DB4170
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Untitled
Abstract: No abstract text available
Text: October 1988 H ^ M ic ro Linear ML2252, ML2259 /uP Compatible 8-Bit A/D Converters with 2- or 8-Channel Multiplexer GENERAL DESCRIPTION FEATURES The ML2252 and ML2259 combine an 8 -bit A / D converter, 2 - or 8 -channel analog multiplexer, and a microprocessor
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ML2252,
ML2259
ML2252
ML2259
1-46M
28-PIN
ML2259BMJ
ML2259BIJ
ML2259BCP
ML2259BCQ
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M57737
Abstract: p01 transistor transistor tc 144 transistor power rating 5w TRANSISTOR JC PINw10 transistor c 144 Mitsubishi transistor rf final
Text: MITSUBISHI RF POWER MODULE M57737 144-148MHz, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dim ensions in mm PIN : P in : RF IN P U T © V C C 1 : 1st. DC S U P P L Y V C C 2 : 2nd . DC S U P P L Y ®PO : RF O U T P U T ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted
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M57737
144-148MHz,
M57737
p01 transistor
transistor tc 144
transistor power rating 5w
TRANSISTOR JC
PINw10
transistor c 144
Mitsubishi transistor rf final
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67746 144-148MHz, 12.5V, 60W, FM MOBILE RADIO OUTLINE DRAWING D im ensions in mm BLOCK DIAGRAM PIN: 3 Pin : RF IN PU T (g V C C 1 : 1st. DC S U P PLY V C C 2 : 2nd. DC S U P PLY ©PO : RF O U TP U T © G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS
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M67746
144-148MHz,
146MHz
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M68702L
Abstract: il68
Text: MITSUBISHI RF POWER MODULE M68702L 135-160MHz, 12.5V, 60W, FM MOBILE RADIO O U TLIN E DR AW IN G Dimensions in mm PIN : P in : RF INPUT CDVcci : 1st. DC SUPPLY VCC 2 : 2nd. DC SUPPLY ® PO : RF OUTPUT ® G N D : FIN A B S O L U T E M AXIM UM RA TING S Tc = 25 ‘C unless otherwise noted
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M68702L
135-160MHz,
f-135MHz
146MHz
M68702L
il68
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