clc014aje
Abstract: LMV8244 Video sync splitter lm DS34C86 LMH0074SQ DS8921 HV servo thermopile array 2N3960 DP838640 DS8921 equivalent
Text: Analog Design Guide for Xilinx FPGAs www.national.com/xilinx 2008 Vol. 1 Analog Solutions for FPGAs .2 Design Tools .3 PowerWise Solutions . 4-5 Data Conversion . 6-12 Amplifiers. 13-23
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TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs
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TSAL7200
TSAL7200
D-74025
20-May-99
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TSAL6200
Abstract: No abstract text available
Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL6200
2002/95/EC
2002/96/EC
TSAL6200
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL6200
2002/95/EC
2002/96/EC
TSAL6200
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL6200
2002/95/EC
2002/96/EC
TSAL6200
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
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TSAL7200
TSAL7200
08-Apr-05
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TSAL6200
Abstract: No abstract text available
Text: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs
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TSAL6200
TSAL6200
D-74025
20-May-99
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high power infrared led
Abstract: TSAL7200
Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
18-Jul-08
high power infrared led
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Untitled
Abstract: No abstract text available
Text: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
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TSAL6200
TSAL6200
D-74025
24-Jun-03
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TSAL6200
Abstract: No abstract text available
Text: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
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TSAL6200
TSAL6200
D-74025
11-May-04
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog FKCVW 2,5/12-STF-5,08 Order No.: 1873906 The figure shows a 10-position version of the product Plug component, Nominal current: 12 A, Rated voltage III/2 : 320 V,
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5/12-STF-5
10-position
CC-2009)
5/12-GF-5
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Untitled
Abstract: No abstract text available
Text: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm
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TSAL7200
2002/95/EC
2002/96/EC
TSAL7200
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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TSAL7200
Abstract: No abstract text available
Text: TSAL7200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs
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TSAL7200
TSAL7200
D-74025
20-May-99
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gs2988
Abstract: GS2989 Gennum GS2988 GS2965 QFN 64 9x9 footprint QFN-32 footprint GS2975A GS2978 1800mV GS2985
Text: 3Gb/s Serial Routing & Distribution 3Gb/s Serial Routing and Distribution – Generation 2 • • • • • All products 3Gb/s SDI capable Lower power than previous generation Lower jitter than previous generation More features to aid system design -40 to 85 ºC operating temperature range
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GS2964
GS2984
195mW,
GS2978
GS1578A
GS9077
GS2985
gs2988
GS2989
Gennum GS2988
GS2965
QFN 64 9x9 footprint
QFN-32 footprint
GS2975A
GS2978
1800mV
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21211
Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL6200
2002/95/EC
2002/96/EC
TSAL6200
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
21211
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k 6257 k epcos
Abstract: icl 7217 44907 thermistor epcos 4215 B57891M0103J000 epcos NTC Thermistor S 234 74538 B57891M0333 000 330130 51117
Text: NTC thermistors for temperature measurement Leaded NTC, lead spacing 2.5 mm Series/Type: Date: B57891 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B57891
k 6257 k epcos
icl 7217
44907 thermistor
epcos 4215
B57891M0103J000
epcos NTC Thermistor S 234
74538
B57891M0333 000
330130
51117
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TSAL6200
Abstract: No abstract text available
Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs
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TSAL6200
TSAL6200
D-74025
20-May-99
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pmi sw 01
Abstract: No abstract text available
Text: AD7524M Advanced LinCMOS 8-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER D 3 3 2 0 , SEPTEMBER 1989 • • Advanced LinCMOS™ Silicon-Gate Technology J PACKAGE T O P V IEW Easily Interfaced to Microprocessors o u t • On-Chip Data Latches • Monotonicity Over Entire A/D Conversion
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AD7524M
PM-7524,
P7524
pmi sw 01
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TSAL5100
Abstract: No abstract text available
Text: TSAL5100 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package D escription TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol
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TSAL5100
TSAL5100
D-74025
21-Sep-98
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MIL-C-915
Abstract: UF3H 33-01UN BJ379 J374 M24643 M24643/33-01UN
Text: DATA CQNTAINEO IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. ANO SHALL n o t b e o i s c l o s e o . c o p i e d d r u s e d FOR PROCUREMENT OR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION OF TROMPETER H TABLE I DASH CPNNECTPR NP TYPE -I
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PL375
CJ370
BJ379
M49142/08-0011
M24643/33-01UN
M49142/09-0012
M24643/33-01
4375-28UNEF-2A
PL375/CJ370/CJ379/BJ374
I-8-82
MIL-C-915
UF3H
33-01UN
J374
M24643
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32-way
Abstract: No abstract text available
Text: □RAWING No,: M20-610XXXX sto IF IN DOUBT - ASK SHEET 2 OF 2 2 .5 4 *r v n 1 ïr r* 1 H ^ YJ i . U Z / <s n 0 0 o o 0 0 0 o CD +l tn CD ’T J A LL DIMENSIONS IN mm THIRD ANGLE PROJECTION NOT TO SCALE “ T V D I II LO CM 0 0 0 0 — ~ l\ 0 C 0 0 0 —_ JL
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M20-610XXXX
L94V-0
32-WAY)
32-way
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Untitled
Abstract: No abstract text available
Text: Tem ic TSAL6100 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 5 mm 'T-13A Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol
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TSAL6100
TSAL6100
D-74025
18-Aug-98
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