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    140M 3N Search Results

    140M 3N Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CA3140MZ96 Renesas Electronics Corporation 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Visit Renesas Electronics Corporation
    CA3140MZ Renesas Electronics Corporation 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Visit Renesas Electronics Corporation
    TPS57140MDRCREP Texas Instruments TPS57140-EP 1.5-A 42-V STEP-DOWN DC-DC CONVERTER WITH Eco-mode™ CONTROL 10-VSON -55 to 125 Visit Texas Instruments Buy
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    140M 3N Price and Stock

    Nisshinbo Micro Devices NJW4140M-TE1

    Switching Voltage Regulators N-Ch 3V to 40V 5.3V 40kHz to 1MHz 45V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NJW4140M-TE1
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    140M 3N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADC-318

    Abstract: 120 wave filter 8 pin 4v power supply converter Delay Lines murata 140M ADC-318A 8 bit ttl ADC
    Text: ADC-318, ADC C ADC-318A 8-Bit, 8-Bit, 120 120MHz 0MHz an and nd 140M 140MHz MHz Full-Flash A/D Converter OBSOLETE PRODUCT Contact Factory for Replacement Model FEATURES Low power dissipation n 960mW W max. TTL compatible output Diff./Integral nonlinearity (±½LSB max.)


    Original     		PDF ADC-318, ADC-318A 120MHz 140MHz 140MHz 960mW ADC-318 ADC-318A 120MHz 120 wave filter 8 pin 4v power supply converter Delay Lines murata 140M 8 bit ttl ADC

    100C

    Abstract: 100-C09 140M
    Text: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings


    Original     		PDF 140-CMN 103S-KTD2-GC40CK) 103S-ATD2-DB40CK) 100C 100-C09 140M

    100C

    Abstract: 100-C09 140M
    Text: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings


    Original     		PDF 140-CMN 103S-KTD2-GC40CK) 103S-ATD2-DB40CK) 100C 100-C09 140M

    100C CONTACTOR ROCKWELL

    Abstract: 100-C09 103S-103 100-c30 100C 140M sc 107 b
    Text: 1 2 3 4 5 6 7 8 A 7 BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings


    Original     		PDF 140-CMN 103S-KTD2-GC40CK) 103S-ATD2-DB40CK) 100C CONTACTOR ROCKWELL 100-C09 103S-103 100-c30 100C 140M sc 107 b

    100C

    Abstract: 100-C09 140M 41053
    Text: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR 2 nd CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings


    Original     		PDF 140-CMN 103S-KTD2-GC40CK) 103S-ATD2-DB40CK) /193-ED 100C 100-C09 140M 41053

    MPS9680

    Abstract: transistor 2N4258 2N2002 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178


    Original     		PDF 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 MPS9680 transistor 2N4258 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020

    2N907 PNP

    Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178


    Original     		PDF 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 2N907 PNP 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP

    thermistor 140M

    Abstract: 140M Thermistor rockwell E3 e3 overload relay 103t 100C 100-C09 100-C30 140M
    Text: 1 2 3 4 5 6 7 8 A Trip Contacts CB 1 CB (2) 1 st CHAR 2 nd CHAR Aux Contacts Trip Contacts CB (1) X - - - - X - - - - C 1 NO + 1 NC - 13 - 14 21 - 22 B K,L,M,N,Q 1 NO - 13 - 14 - D 2 NO - 13 - 14 23 - 24 C K,L,M,N,Q 1 NO + 1 NC - 13 - 14 21 - 22


    Original     		PDF 140-CMN 103S-KTD2-GC40CK) 103S-ATD2-DB40CK) thermistor 140M 140M Thermistor rockwell E3 e3 overload relay 103t 100C 100-C09 100-C30 140M

    140-CMN

    Abstract: 100C 100-C09 140M
    Text: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings 2 nd CHAR Aux Contacts Trip Contacts CB (1) CB (2) 1 st CHAR


    Original     		PDF 140-CMN 103S-KTD2-GC40CK) 103S-ATD2-DB40CK) /193-ED 100C 100-C09 140M

    EC27

    Abstract: 16113
    Text: EC27 Series EC27 • Crystal Clock Oscillators • LVCMOS Output • +2.5V Supply Voltage • Tri-State Output Function • 4 Pad Ceramic SMD Package • Low Stand-by Current • RoHS Compliant Pb-Free H 1.6 L 7.0 W 5.0 OSCILLATOR ELECTRICAL SPECIFICATIONS


    Original     		PDF 00093M, 00312M, UL94-V0 MIL-STD-883, J-STD-020, MIL-STD-202, EC27 16113

    KM68257BP

    Abstract: KM68257Bp-20 KM68257BJ25
    Text: PRELIMINARY KM68257B CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM68257BP/J-15: 150mA (max.) KM68257BP/J-20: 140m A (max.)


    OCR Scan     		PDF KM68257B KM68257BP/J-15: 150mA KM68257BP/J-20: KM68257BP/J-25: KM68257BP: 28-pin KM68257BJ: KM68257BP KM68257Bp-20 KM68257BJ25

    AAEA2

    Abstract: KM6865B-12 km6865b
    Text: CMOS SRAM KM6865B 8,192 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6865B-12 :140m A (max.) KM6865B-15 : 130mA (max.)


    OCR Scan     		PDF KM6865B KM6865B-12 KM6865B-15 130mA KM6865B-20 120mA KM6865B-25 110mA 6865B 28-DIP-300 AAEA2 KM6865B-12 km6865b

    KM64258BJ-20

    Abstract: KM64258BJ-15
    Text: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140m A (max.)


    OCR Scan     		PDF KM64258B KM64257BP/J-15: KM64257BP/J-20: KM64257BP/J-25: KM64258BP: 28-pin KM64258BJ: KM64258BJ-20 KM64258BJ-15

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74AC377 Octal D-Type Flip-Flop Features: • High Speed: fMAX = 140M H z typ. at Vcc = 5V • Low Power Dissipation: lcc = 8nA (max.) at Ta = 2 5 CC • High Noise immunity: VN,H = V N!L = 28% V cc (min.) • Symmetrical Output Impedance: ll0Hl = Iol = 24mA


    OCR Scan     		PDF TC74AC377

    batery

    Abstract: KM6465B-12 KM6465B-15 KM6465B-20 KM6465B-25
    Text: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e: 12, 15, 20, 25ns max. • Lo w P ow er D issipatio n S tandby (TTL) : 35m A (max.) (CMOS): 1m A (max.) ' • Operating KM6465B-12 :140m A (max.)


    OCR Scan     		PDF KM6465B/BL KM6465B-12 140mA KM6465B-15 130mA KM6465B-20 120mA KM6465B-25 110mA KM6465BP batery KM6465B-12 KM6465B-15 KM6465B-20 KM6465B-25

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74AC823 9-Bit D-Type Flip-Flop with 3-State Output Features: • High Speed: fMAX = 140M Hz typ. at Vcc = 5V • Low Power Dissipation: lcc = 8^A (max.) at • High Noise Immunity: V N,H = V N!L = 28% V cc (min.) • Symmetrical Output Impedance: ll0Hl = Iol = 24mA


    OCR Scan     		PDF TC74AC823

    Untitled

    Abstract: No abstract text available
    Text: KM64258C CMOS SRAM 64K x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 1 2 .1 5 ,20ns M ax. • Low Power D issipation Standby (TT L) : 40m A(M ax.) (CM O S) : 2m A(M ax.) O perating KM64258G -1 2 : 1S0mA(M ax.) KM 64258C -1 5 : 140m A(M ax.)


    OCR Scan     		PDF KM64258C KM64258G 64258C KM642S8C 64258CJ 28-SOJ-3QO KMB4258C 144-bit KM84256C

    AC122-30

    Abstract: AF185 2N625 2SA479 2N3074 2SA301 SFT155 XA131 3SJ11 2sb48
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF B170024 4000n AC122-30 AF185 2N625 2SA479 2N3074 2SA301 SFT155 XA131 3SJ11 2sb48

    2N2672

    Abstract: 2SA144 2N1178 2N2654 2SA234 2SA235 2N1515 AH-61 transistor 2sA144 2SA435
    Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol


    OCR Scan     		PDF MA902 MA903 MA904 SYL1592 SYL2120 T2351 TK49C 2N1432 2N2672 2SA144 2N1178 2N2654 2SA234 2SA235 2N1515 AH-61 transistor 2sA144 2SA435

    transistor 2sA144

    Abstract: 2SA234 2SA144 2SA235 TRANSISTOR r73 2N2672 2SA135 2N1516 2N2654 dm-58
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF B170024 4000n transistor 2sA144 2SA234 2SA144 2SA235 TRANSISTOR r73 2N2672 2SA135 2N1516 2N2654 dm-58

    SOJ32-P-300

    Abstract: DIP32-P-300 TC55329 J15-20
    Text: TOSHIBA TC55329AP/AJ-15/20/25/35 SILICON GATE CMOS 32,768 WORD x 9 BIT CMOS STATIC RAM D e s c rip tio n The TC55329AP/AJ is a 294,912 bit high speed CMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		PDF TC55329AP/AJ-15/20/25/35 TC55329AP/AJ 002b37fl SOJ32-P-300 DIP32-P-300 TC55329 J15-20

    3N33

    Abstract: J460 2N792 2SC286 BC129 BC130C 2sc288 2SC160 ST1694 BF220
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol % ' Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others.


    OCR Scan     		PDF MT101 NS060 500nb JAN2N332 2N789 2N902 2N790 2N792 3N33 J460 2SC286 BC129 BC130C 2sc288 2SC160 ST1694 BF220

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM641001A 256Kx 15/17/20ns 190/180/170m 12/12/13ns 8/9/10ns 15/17/2ring

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM641001A 256Kx 15/17/20ns 190/180/170m 12/12/13ns 8/9/10ns