SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
|
Original
|
PDF
|
Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
|
JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
|
Original
|
PDF
|
M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
PC28F00AM29EWHA
11-Apr-2011
JS28F512M29
js28f256m29
js28f256
JS28F512
pc28f00am29ew
JS28F00AM29EW
pc28f00am29
js28f00
PC28F00AM29EWHA
JS28F256M29EWL
|
MSM 7227
Abstract: S6E63D6 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module
Text: S6E63D6 Rev.1.10 MOBILE DISPLAY DRIVER IC Property of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S6E63D6 Data Sheet_REV 1.10 Mobile Display Driver IC Trademark & Copyright Information Copyright © 2007-2007 Samsung Electronics Co., Ltd. All Rights Reserved.
|
Original
|
PDF
|
S6E63D6
S6E63D6
MSM 7227
MSM 7230
MSM 7225
80-SYSTEM
MDDI
IC 7224
R68H
amoled samsung
AMOLED Display module
|
Spansion S29GL512N11
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
|
Original
|
PDF
|
S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
S29GLxxxN
27631sb2
Spansion S29GL512N11
|
asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M,S29GL128M,S29GL064M,S29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
|
Original
|
PDF
|
S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
|
120R
Abstract: C8800
Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am29LV2562M
120R
C8800
|
EN25QH
Abstract: 1AEF00 cFeon* SPI Flash
Text: EN25QH256 EN25QH256 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • 256 M-bit Serial Flash - 256 M-bit/32,768 K-byte/131,072 pages
|
Original
|
PDF
|
EN25QH256
M-bit/32
K-byte/131
80MHz
50MHz
EN25QH
1AEF00
cFeon* SPI Flash
|
l256mh113
Abstract: L256ML123R
Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am29LV256M
l256mh113
L256ML123R
|
Untitled
Abstract: No abstract text available
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,
|
Original
|
PDF
|
S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
S29GL128P,
S29GL256P,
S29GL512P
S29GL128N,
|
ILI9325DS_V0.43
Abstract: ILI9325 BIT 3195 G G184 BIT+3195+G ILI9325D
Text: ILI9325 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Version: V0.43 Document No.: ILI9325DS_V0.43.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096
|
Original
|
PDF
|
ILI9325
240RGBx320
ILI9325DS
ILI9325DS_V0.43
ILI9325
BIT 3195 G
G184
BIT+3195+G
ILI9325D
|
L256MH113R
Abstract: L256ML113R
Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
|
Original
|
PDF
|
Am29LV256M
L256MH113R
L256ML113R
|
Untitled
Abstract: No abstract text available
Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
PDF
|
S29NS-P
S29NS512P,
S29NS256P,
S29NS128P
|
a22t
Abstract: S19G S29GL-N
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications
|
Original
|
PDF
|
S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
a22t
S19G
|
S29GL-N
Abstract: 1E300
Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
|
Original
|
PDF
|
S29GL512/256/128N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
1E300
|
|
s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
|
Original
|
PDF
|
S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
|
S70GL01GN00
Abstract: S29GL01GP S29GL512N
Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP
|
Original
|
PDF
|
S70GL01GN00
S70GL01GN
S29GL01GP
S29GL01GP
S29GL512N
|
SPFD5408
Abstract: SPFD5408B BIT 3195 G G317 g228 50v s551 ORISE Technology driver G296 S550 internal diagram of 7490 IC
Text: SPFD5408B 720-channel 6-bit Source Driver with System-on-chip for Color Amorphous TFT-LCDs Preliminary DEC. 24, 2007 Version 0.4 ORISE Technology reserves the right to change this documentation without prior notice. Information provided by ORISE Technology is believed to be
|
Original
|
PDF
|
SPFD5408B
720-channel
SPFD5408
SPFD5408B
BIT 3195 G
G317
g228 50v
s551
ORISE Technology driver
G296
S550
internal diagram of 7490 IC
|
SA293
Abstract: SA273 988000
Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
|
Original
|
PDF
|
Am29LV256M
16-Bit/32
16-word/32-byte
56-pi
SA293
SA273
988000
|
Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT P IN 24 PART NUM BER LDC —M2 5 0 4 RI-SI PIN 13 510 [0.201] 1 1 ,0 0 [0 ,4 3 3 ] 4,50 [0,1771 ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 X PARAMETER 13D00 EMITTED COLOR: RED FACE COLOR: GRAY SEGMENT COLOR: MILKY WHITE DIFFUSED LIMITS O F SAFE OPERATION AT 25“C
|
OCR Scan
|
PDF
|
13D00
636nm
|
Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER L D C -N 5 6 1 4 N I-S REV, A P IN 12 8.00 [0.315] PIN 7 REV. E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #11482. 03.03.08 4.50 [0.177] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER 19.00 [0.7481 MIN PEAK WAVELENGTH
|
OCR Scan
|
PDF
|
100/uA
13D00
636nm
|
Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT H 6 .1 0 PIN E PIN 4 .5 0 [ 0 .E 4 0 I I REV, [ 0 .1 7 7 ] E.C.N. REV. LDS —C3 0 4 RI —SI B NUMBER AND REVISION COMMENTS DATE A E.C.N. # 1 1 1 5 3 7 .2 1 .0 4 B E.C.N. # 1 1 1 9 3 1 2 .0 7 .0 4 13 2 .5 4 [0.100] 19,10 [0 ,7 5 2 ]
|
OCR Scan
|
PDF
|
13D00
DECL05URE
PRECI90N
|
m28748
Abstract: MS2500-P2A22-61 13B00F1A 13E10L1A ms2500-p2A22 c00f1 M28748/13C00F1A M28748/14F00G1A M28748/13F00F1A
Text: MMM L-C-28748/13 & /14 / 4,5,7,9,11,14,18,20,26, 29,34,44,50,75 CONTACTS f Series M M M is described more comprehensively in our “ M M M " brochure. SIZE 22 CONTACTS Socket Pin Contacts Contacts Shown with guide hardware 18 Not in Mil Spec 20 Mil Spec
|
OCR Scan
|
PDF
|
L-C-28748/13
IL-C28748
M39029/34-440
M39029/35-441
MS2500-P2A22-61
MS2500-S2A22
m28748
13B00F1A
13E10L1A
ms2500-p2A22
c00f1
M28748/13C00F1A
M28748/14F00G1A
M28748/13F00F1A
|
L177 E
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. L D D - A 8 1 4 R I — SI 10.00 [0.394] P IN IB P IN 4.50 C0.177] 10 25,80 [1,016] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C 22,00 [ 0,866] PARAMETER MIN TYP PEAK WAVELENGTH 636 FORWARD VOLTAGE PIN 9 1 35.80 [1.409]
|
OCR Scan
|
PDF
|
LDD-A81
10OfjA
13D00
6DD67-6976
L177 E
|
Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. L D S —A 3 9 0 4 R I —SI A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N, # 1 1 4 7 9 2 .2 0 .0 0 ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2S'C PARAMETER MIN PEAK WAVELENGTH UNITS TEST COND nm 2.0 Z6 5.0
|
OCR Scan
|
PDF
|
A3904RI
13D00
|