Untitled
Abstract: No abstract text available
Text: 107-68550 Packaging Specification 13Jun11 Rev C SOCKET ASSY 25 DEGREE DDR II DIMM 240 POSITION 1. PURPOSE 目的 Define the packaging specification and packaging method of SOCKET ASSY .25 DEGREE DDR II DIMM 240 POSITION. 订定 SOCKET ASSY .25 DEGREE DDR II DIMM 240 POSITION 产品之包装规格及包装方式。
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13Jun11
1658787-X
1658912-X
25DEsure.
1658912-3tray
QR-ME-030C
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Untitled
Abstract: No abstract text available
Text: 107-68602 Packaging Specification 13Jun11 Rev E MINI RJ21 HSG 1. PURPOSE 目的 Define the packaging specifiction and packaging method of WIRE ORGANIZER,HSSDC. 订定 WIRE ORGANIZER,HSSDC 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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13Jun11
1339141-X
1339381-X
1981090-X
1981091-X
1339141-1/ith
1981090-X
1981091-X:
QR-ME-030B
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Untitled
Abstract: No abstract text available
Text: 107-68171 Packaging Specification 13Jun11 Rev T MODULAR JACK ASSY CONNECTOR 1. PURPOSE 目的 Define the packaging specifiction and packaging method of MODULAR JACK ASSY CONNECTOR. 订定 MODULAR JACK ASSY CONNECTOR 产品之包装规格及包装方式。
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13Jun11
6368062-1/2tray
QR-ME-030C
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Untitled
Abstract: No abstract text available
Text: 107-68544 Packaging Specification 13Jun11 Rev P PRESS FIT DDR SOCKET ASSEMBLY 184 and 240 POSITION 1. PURPOSE 目的 Define the packaging specification and packaging method of PRESS FIT DDR SOCKET ASSEMBLY 184 And 240 POSITION products. 订定 PRESS FIT DDR SOCKET ASSEMBLY 184 POSITION And 240 POSITION 产品之包装规格及包装方式。
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13Jun11
X-1364456-X
X-6364456-X
1658669-X
QR-ME-030C
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Untitled
Abstract: No abstract text available
Text: 107-68148 Packaging Specification 13Jun11 Rev J MOD JACK ASSY STACKED,2*1 8 POSN,LED,CAT 5 1. PURPOSE 目的 Define the packaging specifiction and packaging method of MOD JACK ASSY STACKED,2*1 8 POSN, LED,CAT 5. 订定 MOD JACK ASSY STACKED,2*1 8 POSN,LED,CAT 5 产品之包装规格及包装方式。
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13Jun11
1-6368011-1/2tray
QR-ME-030C
tray110455-2)
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SI1013CX
Abstract: 71377
Text: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition
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Si1013CX
2002/95/EC
SC-89
Si1013CX-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
71377
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Untitled
Abstract: No abstract text available
Text: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21
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Si4774DY
Si4774DY-T1-GE3
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4286
Abstract: No abstract text available
Text: Si4286DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0325 at VGS = 10 V 7 0.040 at VGS = 4.5 V 6.3 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
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Si4286DY
2002/95/EC
Si4286DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4286
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Untitled
Abstract: No abstract text available
Text: Package Information Vishay Siliconix MICRO FOOT: 16-BUMP 4 mm x 4 mm, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT 6 X Ø 0.150 ~ 0.229 Note b Solder Mask Ø ~ Pad Diameter + 0.1 Silicon A2 A A1 0.5 Bump Note a 4 3 2 1 b Diameter 0.5 A Recommended Land Pattern e Index-Bump A1
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16-BUMP
027ned
S11-1065-Rev.
13-Jun-11
13-Jun-11
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Untitled
Abstract: No abstract text available
Text: SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0015 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET
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SQM120N03-1m5L
AEC-Q101
2002/95/EC
O-263
O-263
SQM120N03-1m5L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: DG2015 Vishay Siliconix Low-Voltage, Low RON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG2015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the
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DG2015
DG2015
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21
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SiS780DN
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved
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SiHP16N50C
SiHB16N50C
SiHF16N50C
O-220AB
O-220
2002/95/EC
O-263)
SiHP16N50C-E3
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Untitled
Abstract: No abstract text available
Text: Si7216DN Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.032 at VGS = 10 V 6e 0.039 at VGS = 4.5 V 5e Qg (Typ.) 5.5 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7216DN
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4724 Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make DESCRIPTION FEATURES The Si4724CY N-Channel synchronous MOSFET with break-before-make BBM is a high speed driver designed to operate in high frequency DC/DC switchmode power supplies. It’s purpose is to simplify the use of N-Channel
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Si4724
Si4724CY
SO-16
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: DG3408, DG3409 Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG3408, DG3409 uses BiCMOS wafer fabrication technology that allows the DG3408/3409 to operate on single and dual supplies. Single supply voltage ranges from 3
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DG3408,
DG3409
DG3409
DG3408/3409
DG3408
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: New Product SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA400EDJ
SC-70-6L-Single
SC-70
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC
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SiS782DN
2002/95/EC
SiS782DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: DG3535, DG3536 Vishay Siliconix 0.25 Low-Voltage Dual SPDT Analog Switch DESCRIPTION FEATURES The DG3535, DG3536 is a sub 1 0.25 at 2.7 V dual SPDT analog switches designed for low voltage applications. The DG3535, DG3536 has on-resistance matching (less
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DG3535,
DG3536
DG3536
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Untitled
Abstract: No abstract text available
Text: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21
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Si4774DY
Si4774DY-T1-GE3
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4724 Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make DESCRIPTION FEATURES The Si4724CY N-Channel synchronous MOSFET with break-before-make BBM is a high speed driver designed to operate in high frequency DC/DC switchmode power supplies. It’s purpose is to simplify the use of N-Channel
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Si4724
Si4724CY
SO-16
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T R E L E A S E D FOR P U B LIC A T IO N DIST LOC By - R EVISIO N S ALL RIGHTS R ESER VED . D E S C R IP T IO N 13JUN11 HMR DR REVISED PER E C O -1 1 - 0 1 2 0 3 6 I I I I I I i I I I I oo -Î- o o n -io n
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13JUN11
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