S-1315A2J-M5T1U3
Abstract: S-1315B30-M5T1U3
Text: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_02 Seiko Instruments Inc., 2011-2012 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current
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S-1315
S-1315A2J-M5T1U3
S-1315B30-M5T1U3
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S-1315A2J-M5T1U3
Abstract: S-1315A37-M5T1U3 S-1315C36-A6T2U3 S-1315C35-M5T1U3 S-1315D39-A6T2U3 1315D-18 S-1315D13-M5T1U3 S-1315B35-A6T2U3 S-1315A25-M5T1U3 S-1315B30-M5T1U3
Text: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.1_00 Seiko Instruments Inc., 2011-2013 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current
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S-1315
S-1315A2J-M5T1U3
S-1315A37-M5T1U3
S-1315C36-A6T2U3
S-1315C35-M5T1U3
S-1315D39-A6T2U3
1315D-18
S-1315D13-M5T1U3
S-1315B35-A6T2U3
S-1315A25-M5T1U3
S-1315B30-M5T1U3
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1315 TRANSISTOR
Abstract: No abstract text available
Text: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_02 Seiko Instruments Inc., 2011-2012 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current
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S-1315
1315 TRANSISTOR
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S-1315
Abstract: No abstract text available
Text: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_00 Seiko Instruments Inc., 2011 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current
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S-1315
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NL10276BC12-02
Abstract: 63LHS01 KAB2402202NA31 65PWB31 THC63LVDM83A E170632 THC63LVDF84A transistor working principle TA21B 65PW
Text: TFT COLOR LCD MODULE NL10276BC12-02 16.1cm 6.3 Type XGA LVDS interface (1port) DATA SHEET (2nd edition) All information is subject to change without notice. Please confirm the delivery specification before starting to design your system. Document Number: DOD-M-1315 (2nd edition)
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NL10276BC12-02
DOD-M-1315
NL10276BC12-02
63LHS01
KAB2402202NA31
65PWB31
THC63LVDM83A
E170632
THC63LVDF84A
transistor working principle
TA21B
65PW
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MAX5158
Abstract: MAX5158EPE MAX515 MAX5158CEE MAX5158CPE MAX5158EEE MAX5158MJE MAX5159
Text: 19-1315; Rev 1; 12/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving
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10-Bit,
MAX5158/MAX5159
10-bit
MAX5158)
MAX5159)
16-pin
16-bi
MAX5158/MAX5159
13-Bit
MAX5158
MAX5158EPE
MAX515
MAX5158CEE
MAX5158CPE
MAX5158EEE
MAX5158MJE
MAX5159
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MAX5158
Abstract: MAX5158EPE
Text: 19-1315; Rev 1; 12/97 Low -Pow er, Dual, 10-Bit, Voltage-Output DACs w ith Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving
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10-Bit,
MAX5158/MAX5159
10-bit
MAX5158)
MAX5159)
16-pin
MAX5158
MAX5158EPE
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MAX5158
Abstract: 13-Bit Voltage-Output DACs with Serial Interface D82R MAX5158EPE
Text: 19-1315; Rev 1; 12/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving
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10-Bit,
MAX5158/MAX5159
MAX5158/MAX5159
10-bit
MAX5158)
MAX5159)
16-pin
indMAX5159
MAX5158
13-Bit Voltage-Output DACs with Serial Interface
D82R
MAX5158EPE
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MAX5158
Abstract: MAX515 MAX5159 MAX5159CEE MAX5159CPE
Text: 19-1315; Rev 0; 10/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving
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10-Bit,
MAX5158/MAX5159
10-bit
MAX5158)
MAX5159)
16-pin
16-bit
MAX5158/MAX5159
10-Bit
MAX5158
MAX515
MAX5159
MAX5159CEE
MAX5159CPE
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T03A
Abstract: TO-202 transistor mkt 344 Cu50 TRANSISTOR BC 136 MTL 728 MS-026-bcd M03A BD 669 V84A
Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages
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1315 TRANSISTOR
Abstract: No abstract text available
Text: CED6030L/CEU6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A, RDS ON = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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CED6030L/CEU6030L
O-251
O-252
O-251
1315 TRANSISTOR
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vjp44a
Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages
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MS011798
vjp44a
MO-16B-AB
TA11B
TF11B
cu50
ad 153 transistor
transistor bd 905
transistor BC 185
mkt 344
MS-026-bcd
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous
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MPSL51
O-226AA)
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Untitled
Abstract: No abstract text available
Text: CED6030L/CEU6030L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =15.5mΩ @VGS=10V. RDS(ON)=22mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D 6 High power and current handling capability.
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CED6030L/CEU6030L
O-251
O-252
O-252AA
O-251
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so 498
Abstract: MAX5158 max5758 max5759 MAX5158EPE
Text: 19- 1315; Rev 1; 12/97 J V Ì J lX A J W i Low-Power, Dual, 10-Bit, Voltage-Output DACs The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500^A from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving
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10-Bit,
MAX5158/MAX5159
10-bit
MAX5158)
MAX5159)
16-pin
so 498
MAX5158
max5758
max5759
MAX5158EPE
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Untitled
Abstract: No abstract text available
Text: □ ANALO G D EVIC ES FEATURES ±50 mA Voltage Programmable Current Range 1.5 ns Propagation Delay Inhibit Mode Function High Speed Differential Inputs for Maximum Flexibility Hermetically Sealed Small Gull Wing Package Compatible with AD1321, AD1324 Pin Drivers
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AD1321,
AD1324
AD1315
1315E
1315K
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Z16B
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES +50 mA V oltage Program m able Current Range 1.5 ns Propagation Delay Inhibit M ode Function High Speed Differential Inputs for M axim um Flexibility Herm etically Sealed Small Gull W ing Package Com patible w ith AD1321, AD1324 Pin Drivers
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AD1321,
AD1324
AD1315
AD1315KZ.
D1315EB
16-Lead
Z-16B)
Z16B
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ADI315
Abstract: Z16B 1S144 AD1321 ad1318 AD1315 AD1315KZ AD1317 AD1324 AD664
Text: High Speed Active Load with Inhibit Mode AD1315 A N A LO G D EVICES FEATURES ±50 mA Voltage Programmable Current Range 1J> ns Propagation Delay Inhibit Mode Function High Speed Differential Inputs for Maximum Flexibility Hermetically Sealed Small Gull Wing Package
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AD1315
AD1321,
AD1324
AD1315
ADI315
AD1315EB
AD1315KZ
AD1315KZ.
ADI315
Z16B
1S144
AD1321
ad1318
AD1317
AD664
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BFT46
Abstract: No abstract text available
Text: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film
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DD253fll
BFT46
0D253fib
00ES367
BFT46
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E 94733
Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1488
OT-323
900MHz
E 94733
p1S SOT-89
BFr pnp transistor
SPICE 2G6
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vqe 24 d
Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
Text: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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T-34-3/
34G3217
Q0G0275
vqe 24 d
vqe 24 e
DIODE BZ
s2e transistor
VQE 24
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diode sg 5 ts
Abstract: 1BW TRANSISTOR EUPEC tt 93 n
Text: - r - 3 f- S F 6 - 100 R 06 KF EUPEC SEE » m Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 100 A •c DGaaa? GbT • UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module
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34D32CI7
diode sg 5 ts
1BW TRANSISTOR
EUPEC tt 93 n
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DIODE BZ
Abstract: F6-15R12KF
Text: 7 ^3 0 - 3 / F 6 -1 5 R12 KF E UP EC 55E D Transistor Transistor B M Q B g q ? O O O O g ? ! fc,41 B U P E C Thermische Eigenschaften ^thjc Elektrische Eigenschaften Electrical properties Hochstzulässige Werte V ces Maximum rated values 1200 V 15 A le Thermal properties
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F6-15R12KF
r-39-3/
J4032TP
DIODE BZ
F6-15R12KF
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Untitled
Abstract: No abstract text available
Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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