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    1315 TRANSISTOR Search Results

    1315 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1315 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-1315A2J-M5T1U3

    Abstract: S-1315B30-M5T1U3
    Text: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_02 Seiko Instruments Inc., 2011-2012 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current


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    PDF S-1315 S-1315A2J-M5T1U3 S-1315B30-M5T1U3

    S-1315A2J-M5T1U3

    Abstract: S-1315A37-M5T1U3 S-1315C36-A6T2U3 S-1315C35-M5T1U3 S-1315D39-A6T2U3 1315D-18 S-1315D13-M5T1U3 S-1315B35-A6T2U3 S-1315A25-M5T1U3 S-1315B30-M5T1U3
    Text: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.1_00 Seiko Instruments Inc., 2011-2013 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current


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    PDF S-1315 S-1315A2J-M5T1U3 S-1315A37-M5T1U3 S-1315C36-A6T2U3 S-1315C35-M5T1U3 S-1315D39-A6T2U3 1315D-18 S-1315D13-M5T1U3 S-1315B35-A6T2U3 S-1315A25-M5T1U3 S-1315B30-M5T1U3

    1315 TRANSISTOR

    Abstract: No abstract text available
    Text: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_02 Seiko Instruments Inc., 2011-2012 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current


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    PDF S-1315 1315 TRANSISTOR

    S-1315

    Abstract: No abstract text available
    Text: S-1315 Series www.sii-ic.com LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS CMOS VOLTAGE REGULATOR Rev.1.0_00 Seiko Instruments Inc., 2011 The S-1315 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 200 mA output current


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    PDF S-1315

    NL10276BC12-02

    Abstract: 63LHS01 KAB2402202NA31 65PWB31 THC63LVDM83A E170632 THC63LVDF84A transistor working principle TA21B 65PW
    Text: TFT COLOR LCD MODULE NL10276BC12-02 16.1cm 6.3 Type XGA LVDS interface (1port) DATA SHEET (2nd edition) All information is subject to change without notice. Please confirm the delivery specification before starting to design your system. Document Number: DOD-M-1315 (2nd edition)


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    PDF NL10276BC12-02 DOD-M-1315 NL10276BC12-02 63LHS01 KAB2402202NA31 65PWB31 THC63LVDM83A E170632 THC63LVDF84A transistor working principle TA21B 65PW

    MAX5158

    Abstract: MAX5158EPE MAX515 MAX5158CEE MAX5158CPE MAX5158EEE MAX5158MJE MAX5159
    Text: 19-1315; Rev 1; 12/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving


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    PDF 10-Bit, MAX5158/MAX5159 10-bit MAX5158) MAX5159) 16-pin 16-bi MAX5158/MAX5159 13-Bit MAX5158 MAX5158EPE MAX515 MAX5158CEE MAX5158CPE MAX5158EEE MAX5158MJE MAX5159

    MAX5158

    Abstract: MAX5158EPE
    Text: 19-1315; Rev 1; 12/97 Low -Pow er, Dual, 10-Bit, Voltage-Output DACs w ith Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving


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    PDF 10-Bit, MAX5158/MAX5159 10-bit MAX5158) MAX5159) 16-pin MAX5158 MAX5158EPE

    MAX5158

    Abstract: 13-Bit Voltage-Output DACs with Serial Interface D82R MAX5158EPE
    Text: 19-1315; Rev 1; 12/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving


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    PDF 10-Bit, MAX5158/MAX5159 MAX5158/MAX5159 10-bit MAX5158) MAX5159) 16-pin indMAX5159 MAX5158 13-Bit Voltage-Output DACs with Serial Interface D82R MAX5158EPE

    MAX5158

    Abstract: MAX515 MAX5159 MAX5159CEE MAX5159CPE
    Text: 19-1315; Rev 0; 10/97 Low-Power, Dual, 10-Bit, Voltage-Output DACs with Serial Interface The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500µA from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving


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    PDF 10-Bit, MAX5158/MAX5159 10-bit MAX5158) MAX5159) 16-pin 16-bit MAX5158/MAX5159 10-Bit MAX5158 MAX515 MAX5159 MAX5159CEE MAX5159CPE

    T03A

    Abstract: TO-202 transistor mkt 344 Cu50 TRANSISTOR BC 136 MTL 728 MS-026-bcd M03A BD 669 V84A
    Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages


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    1315 TRANSISTOR

    Abstract: No abstract text available
    Text: CED6030L/CEU6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A, RDS ON = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


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    PDF CED6030L/CEU6030L O-251 O-252 O-251 1315 TRANSISTOR

    vjp44a

    Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
    Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages


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    PDF MS011798 vjp44a MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous


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    PDF MPSL51 O-226AA)

    Untitled

    Abstract: No abstract text available
    Text: CED6030L/CEU6030L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =15.5mΩ @VGS=10V. RDS(ON)=22mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D 6 High power and current handling capability.


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    PDF CED6030L/CEU6030L O-251 O-252 O-252AA O-251

    so 498

    Abstract: MAX5158 max5758 max5759 MAX5158EPE
    Text: 19- 1315; Rev 1; 12/97 J V Ì J lX A J W i Low-Power, Dual, 10-Bit, Voltage-Output DACs The MAX5158/MAX5159 low-power, serial, voltageoutput, dual, 10-bit digital-to-analog converters DACs consume only 500^A from a single +5V (MAX5158) or +3V (MAX5159) supply. These devices feature Rail-toRail output swing and are available in a space-saving


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    PDF 10-Bit, MAX5158/MAX5159 10-bit MAX5158) MAX5159) 16-pin so 498 MAX5158 max5758 max5759 MAX5158EPE

    Untitled

    Abstract: No abstract text available
    Text: □ ANALO G D EVIC ES FEATURES ±50 mA Voltage Programmable Current Range 1.5 ns Propagation Delay Inhibit Mode Function High Speed Differential Inputs for Maximum Flexibility Hermetically Sealed Small Gull Wing Package Compatible with AD1321, AD1324 Pin Drivers


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    PDF AD1321, AD1324 AD1315 1315E 1315K

    Z16B

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES +50 mA V oltage Program m able Current Range 1.5 ns Propagation Delay Inhibit M ode Function High Speed Differential Inputs for M axim um Flexibility Herm etically Sealed Small Gull W ing Package Com patible w ith AD1321, AD1324 Pin Drivers


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    PDF AD1321, AD1324 AD1315 AD1315KZ. D1315EB 16-Lead Z-16B) Z16B

    ADI315

    Abstract: Z16B 1S144 AD1321 ad1318 AD1315 AD1315KZ AD1317 AD1324 AD664
    Text: High Speed Active Load with Inhibit Mode AD1315 A N A LO G D EVICES FEATURES ±50 mA Voltage Programmable Current Range 1J> ns Propagation Delay Inhibit Mode Function High Speed Differential Inputs for Maximum Flexibility Hermetically Sealed Small Gull Wing Package


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    PDF AD1315 AD1321, AD1324 AD1315 ADI315 AD1315EB AD1315KZ AD1315KZ. ADI315 Z16B 1S144 AD1321 ad1318 AD1317 AD664

    BFT46

    Abstract: No abstract text available
    Text: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film


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    PDF DD253fll BFT46 0D253fib 00ES367 BFT46

    E 94733

    Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
    Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1488 OT-323 900MHz E 94733 p1S SOT-89 BFr pnp transistor SPICE 2G6

    vqe 24 d

    Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
    Text: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


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    PDF T-34-3/ 34G3217 Q0G0275 vqe 24 d vqe 24 e DIODE BZ s2e transistor VQE 24

    diode sg 5 ts

    Abstract: 1BW TRANSISTOR EUPEC tt 93 n
    Text: - r - 3 f- S F 6 - 100 R 06 KF EUPEC SEE » m Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 100 A •c DGaaa? GbT • UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module


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    PDF 34D32CI7 diode sg 5 ts 1BW TRANSISTOR EUPEC tt 93 n

    DIODE BZ

    Abstract: F6-15R12KF
    Text: 7 ^3 0 - 3 / F 6 -1 5 R12 KF E UP EC 55E D Transistor Transistor B M Q B g q ? O O O O g ? ! fc,41 B U P E C Thermische Eigenschaften ^thjc Elektrische Eigenschaften Electrical properties Hochstzulässige Werte V ces Maximum rated values 1200 V 15 A le Thermal properties


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    PDF F6-15R12KF r-39-3/ J4032TP DIODE BZ F6-15R12KF

    Untitled

    Abstract: No abstract text available
    Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


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